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The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

Scientific reports, 2016-12, Vol.6 (1), p.39619-39619, Article 39619

2016

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Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Nature nanotechnology, 2014-10, Vol.9 (10), p.808-813

2014

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Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal

Physical review letters, 2017-10, Vol.119 (15), p.157701-157701, Article 157701

2017

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Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Nature communications, 2012-10, Vol.3 (1), p.1097-1097, Article 1097

2012

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Quantum confined acceptors and donors in InSe nanosheets

Applied physics letters, 2014-12, Vol.105 (22), p.221909

2014

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Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors

Physical review letters, 2016-05, Vol.116 (18), Article 186603

2016

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Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors

Physical review letters, 2016-05, Vol.116 (18), p.186603-186603

2016

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Resonant tunnelling between the chiral Landau states of twisted graphene lattices

Nature physics, 2015-12, Vol.11 (12), p.1057-1062

2015

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Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

Applied physics letters, 2020-04, Vol.116 (14)

2020

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Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Nature communications, 2012-10, Vol.3 (1), p.1097

2012

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Highly-mismatched InAs/InSe heterojunction diodes

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

Physical review. B, 2020-03, Vol.101 (9), p.1, Article 094429

2020

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Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Communications physics, 2018-12, Vol.1 (1), Article 94

2018

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Tunneling in Graphene/h-BN/Graphene Heterostructures through Zero-Dimensional Levels of Defects in h-BN and Their Use as Probes to Measure the Density of States of Graphene

JETP letters, 2019-04, Vol.109 (7), p.482-489

2019

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Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

Physical review letters, 2010-11, Vol.105 (22), p.227202-227202, Article 227202

2010

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Controlling high-frequency collective electron dynamics via single-particle complexity

Physical review letters, 2012-07, Vol.109 (2), p.024102-024102, Article 024102

2012

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Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

Scientific reports, 2016-08, Vol.6 (1), p.32039-32039, Article 32039

2016

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Tuneable paramagnetic susceptibility and exciton g-factor in Mn-doped PbS colloidal nanocrystals

Nanoscale, 2014-08, Vol.6 (15), p.8919-8925

2014

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Manipulating and imaging the shape of an electronic wave function by magnetotunneling spectroscopy

Physical review letters, 2010-12, Vol.105 (23), p.236804-236804, Article 236804

2010

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Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

Physical review. B, Condensed matter and materials physics, 2014-08, Vol.90 (8), Article 085309

2014

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Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes

Applied physics letters, 2014-06, Vol.104 (24)

2014

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Observation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures

JETP letters, 2018, Vol.107 (4), p.238-242

2018

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Laser location and manipulation of a single quantum tunneling channel in an InAs quantum dot

Physical review letters, 2012-03, Vol.108 (11), p.117402-117402, Article 117402

2012

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Band-gap profiling by laser writing of hydrogen-containing III-N-Vs

Physical review. B, Condensed matter and materials physics, 2012-10, Vol.86 (15), Article 155307

2012

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H-tailored surface conductivity in narrow band gap In(AsN)

Applied physics letters, 2015-01, Vol.106 (2)

2015

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The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Quantum confined acceptors and donors in InSe nanosheets

Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors

Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors

Resonant tunnelling between the chiral Landau states of twisted graphene lattices

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Highly-mismatched InAs/InSe heterojunction diodes

Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Tunneling in Graphene/h-BN/Graphene Heterostructures through Zero-Dimensional Levels of Defects in h-BN and Their Use as Probes to Measure the Density of States of Graphene

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

Controlling high-frequency collective electron dynamics via single-particle complexity

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

Tuneable paramagnetic susceptibility and exciton g-factor in Mn-doped PbS colloidal nanocrystals

Manipulating and imaging the shape of an electronic wave function by magnetotunneling spectroscopy

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes

Observation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures

Laser location and manipulation of a single quantum tunneling channel in an InAs quantum dot

Band-gap profiling by laser writing of hydrogen-containing III-N-Vs

H-tailored surface conductivity in narrow band gap In(AsN)

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