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Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution

Journal of applied physics, 2014-05, Vol.115 (17)

Majumdar, Kausik

2014

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Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Advanced functional materials, 2021-05, Vol.31 (18), p.n/a

2021

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Revisiting the Theory of Ferroelectric Negative Capacitance

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.2043-2049

2016

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Observation of ~100% valley-coherent excitons in monolayer MoS2 through giant enhancement of valley coherence time

Light, science & applications, 2023-07, Vol.12 (1), p.173-173, Article 173

2023

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Origin of selective enhancement of sharp defect emission lines in monolayer WSe2 on rough metal substrate

Journal of applied physics, 2020-02, Vol.127 (7)

2020

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Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides

Physical review. B, 2019-02, Vol.99 (8), p.085412, Article 085412

2019

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Strong near band-edge excited second-harmonic generation from multilayer 2H Tin diselenide

Scientific reports, 2021-07, Vol.11 (1), p.15017-15017, Article 15017

2021

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Harmonic to anharmonic tuning of moiré potential leading to unconventional Stark effect and giant dipolar repulsion in WS2/WSe2 heterobilayer

Nature communications, 2023-08, Vol.14 (1), p.4679-4679, Article 4679

2023

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Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

IEEE electron device letters, 2014-03, Vol.35 (3), p.402-404

2014

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Interlayer charge transport controlled by exciton–trion coherent coupling

NPJ 2D materials and applications, 2019-04, Vol.3 (1), Article 15

2019

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Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS2/2H-MoS2 T‑Junction

ACS nano, 2020-06, Vol.14 (6), p.6803-6811

2020

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High field carrier transport in graphene: Insights from fast current transient

Applied physics letters, 2012-09, Vol.101 (12)

2012

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Probing biexciton in monolayer WS2 through controlled many-body interaction

2d materials, 2021-12, Vol.9 (1)

2021

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Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors

Journal of applied physics, 2015-01, Vol.117 (3)

2015

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Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS 2 /2H-MoS 2 T-Junction

ACS nano, 2020-06, Vol.14 (6), p.6803-6811

2020

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Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe 2 /SnSe 2 Vertical Heterojunction

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4141-4148

2018

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High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4141-4148

2018

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Negative Differential Photoconductance as a Signature of Nonradiative Energy Transfer in van der Waals Heterojunction

ACS nano, 2021-10, Vol.15 (10), p.16432-16441

2021

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Charge‐Density Wave Driven Giant Thermionic‐Current Switching in 1T‐TaS2/2H‐TaSe2/2H‐MoS2 Heterostructure

Advanced electronic materials, 2022-12, Vol.8 (12), p.n/a

2022

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STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

IEEE electron device letters, 2013-09, Vol.34 (9), p.1082-1084

2013

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Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

ACS applied materials & interfaces, 2018-02, Vol.10 (6), p.5657-5664

2018

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Charge‐Density Wave Driven Giant Thermionic‐Current Switching in 1T‐TaS 2 /2H‐TaSe 2 /2H‐MoS 2 Heterostructure

Advanced electronic materials, 2022-12, Vol.8 (12)

2022

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Polarized and narrow excitonic emission from graphene-capped monolayer W S 2 through resonant phonon relaxation

Physical review. B, 2023-08, Vol.108 (7), Article 075436

2023

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Asymmetrically Encapsulated Vertical ITO/MoS2/Cu2O Photodetector with Ultrahigh Sensitivity

Small (Weinheim an der Bergstrasse, Germany), 2018-01, Vol.14 (3), p.n/a

2018

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Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Revisiting the Theory of Ferroelectric Negative Capacitance

Observation of ~100% valley-coherent excitons in monolayer MoS2 through giant enhancement of valley coherence time

Origin of selective enhancement of sharp defect emission lines in monolayer WSe2 on rough metal substrate

Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides

Strong near band-edge excited second-harmonic generation from multilayer 2H Tin diselenide

Harmonic to anharmonic tuning of moiré potential leading to unconventional Stark effect and giant dipolar repulsion in WS2/WSe2 heterobilayer

Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

Interlayer charge transport controlled by exciton–trion coherent coupling

Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS2/2H-MoS2 T‑Junction

High field carrier transport in graphene: Insights from fast current transient

Probing biexciton in monolayer WS2 through controlled many-body interaction

Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors

Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS 2 /2H-MoS 2 T-Junction

Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe 2 /SnSe 2 Vertical Heterojunction

High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction

Negative Differential Photoconductance as a Signature of Nonradiative Energy Transfer in van der Waals Heterojunction

Charge‐Density Wave Driven Giant Thermionic‐Current Switching in 1T‐TaS2/2H‐TaSe2/2H‐MoS2 Heterostructure

STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

Charge‐Density Wave Driven Giant Thermionic‐Current Switching in 1T‐TaS 2 /2H‐TaSe 2 /2H‐MoS 2 Heterostructure

Polarized and narrow excitonic emission from graphene-capped monolayer W S 2 through resonant phonon relaxation

Asymmetrically Encapsulated Vertical ITO/MoS2/Cu2O Photodetector with Ultrahigh Sensitivity

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