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Steep-slope hysteresis-free negative capacitance MoS2 transistors

Nature nanotechnology, 2017-12, Vol.13 (1), p.24-28

2017

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Steep-slope hysteresis-free negative capacitance MoS2 transistors

Nature nanotechnology, 2018-01, Vol.13 (1), p.24-28

2018

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Steep-slope hysteresis-free negative capacitance MoS 2 transistors

Nature nanotechnology, 2018-01, Vol.13 (1), p.24

2018

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β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Applied physics letters, 2017-08, Vol.111 (9)

2017

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Thermodynamic Studies of β‑Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

ACS omega, 2017-11, Vol.2 (11), p.7723-7729

2017

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Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3516-3523

2015

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Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1186-1190

2022

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Enhancement of Thermal Transfer From β-Ga 2 O 3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1186-1190

2022

Volltextzugriff (PDF)

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3195-3199

2021

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Thermoreflectance CCD Imaging of Self-Heating in Power MOSFET Arrays

IEEE transactions on electron devices, 2014-09, Vol.61 (9), p.3047-3053

2014

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BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10 14 /cm 2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3195-3199

2021

Volltextzugriff (PDF)

Fast transient thermoreflectance CCD imaging of pulsed self heating in AlGaN/GaN power transistors

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.CD.2.1-CD.2.3

2013

Volltextzugriff (PDF)

High resolution thermal imaging of pre-breakdown in power AlGaN/GaN MOSHEMTs

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.5C-3.1-5C-3.7

2017

Volltextzugriff (PDF)

Thermodynamic Studies of β-Ga 2 O 3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

ACS omega, 2017-11, Vol.2 (11), p.7723-7729

2017

Volltextzugriff (PDF)

Thermoreflectance CCD imaging of self heating in AlGaN/GaN high electron mobility power transistors at high drain voltage

2012 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2012, p.173-181

2012

Volltextzugriff (PDF)

Nanosecond transient thermoreflectance imaging of snapback in semiconductor controlled rectifiers

2011 International Reliability Physics Symposium, 2011, p.EL.4.1-EL.4.6

2011

Volltextzugriff (PDF)

Thermal characterization of high power transistor arrays

2009 25th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, 2009, p.50-54

2009

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Steep-slope hysteresis-free negative capacitance MoS2 transistors

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Steep-slope hysteresis-free negative capacitance MoS 2 transistors

β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Thermodynamic Studies of β‑Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs

Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

Enhancement of Thermal Transfer From β-Ga 2 O 3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Thermoreflectance CCD Imaging of Self-Heating in Power MOSFET Arrays

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10 14 /cm 2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Fast transient thermoreflectance CCD imaging of pulsed self heating in AlGaN/GaN power transistors

High resolution thermal imaging of pre-breakdown in power AlGaN/GaN MOSHEMTs

Thermodynamic Studies of β-Ga 2 O 3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

Thermoreflectance CCD imaging of self heating in AlGaN/GaN high electron mobility power transistors at high drain voltage

Nanosecond transient thermoreflectance imaging of snapback in semiconductor controlled rectifiers

Thermal characterization of high power transistor arrays

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