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X-ray diffraction characterization of superlattices grown on offcut (100) substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1992-05, Vol.10 (3), p.489-492

Maigne, P.

1992

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Influence of growth conditions on the residual strain in thick metalorganic vapor phase epitaxy grown InGaAs epilayers

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-01, Vol.15 (1), p.43-47

Maigné, P.

1997

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Structural characterization of InGaAs/GaAs superlattices grown on misoriented substrates

Journal of crystal growth, 1992-03, Vol.118 (1), p.117-124

1992

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X-ray diffraction of relaxed InGaAs heterostructures grown on misoriented (100) GaAs substrates

Semiconductor science and technology, 1992-01, Vol.7 (1), p.1-5

1992

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Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE

Journal of crystal growth, 1992-05, Vol.120 (1), p.212-217

1992

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Structural investigation of MOVPE grown InGaAs buffer layers

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.743-747

1997

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Adsorption of Sn on cleaved Si(111) surfaces

Surface science, 1985-11, Vol.163 (2), p.478-488

1985

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An InGaAs-InP position-sensing photodetector

IEEE journal of quantum electronics, 1990-05, Vol.26 (5), p.820-823

1990

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Measurement of residual strain in InGaAs buffer layers

Journal of applied physics, 1994-08, Vol.76 (3), p.1962-1964

1994

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Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods

Surface science, 1990-04, Vol.228 (1), p.347-350

1990

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Growth and characterization of Si1-xGex and Ge epilayers on (100) Si

Journal of applied physics, 1988-06, Vol.63 (12), p.5738-5746

1988

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Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates

Applied physics letters, 1996-07, Vol.69 (5), p.682-684

1996

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Structural properties of partially relaxed InxGa1-xAs layers grown on (100) and misoriented GaAs substrates

Applied physics letters, 1993-02, Vol.62 (8), p.873-875

1993

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Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering

Applied physics letters, 1998-01, Vol.72 (4), p.436-438

1998

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Solar module technology

Applied solar energy, 1992, Vol.28 (6), p.75-77

MAIGNE, P

1992

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Strain relaxation in InAlSb epilayers grown on InSb substrates

Applied physics letters, 1994-09, Vol.65 (12), p.1543-1545

1994

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The growth of gallium arsenide on Si(100) by molecular-beam epitaxy

Canadian journal of physics, 1987-08, Vol.65 (8), p.904-908

1987

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Relaxation in tensile-strained InAlSb/InSb heterostructures

Journal of applied physics, 1995-02, Vol.77 (4), p.1466-1470

1995

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Charge carrier effect on the microwave losses observed on traveling-wave electrodes used in electro-optic modulators

Microwave and optical technology letters, 1998-03, Vol.17 (4), p.236-241

1998

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Heteroepitaxy of Ge on (100) Si substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1987-07, Vol.5 (4), p.1898-1902

1987

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Raman scattering from In1-xAlxSb metastable epilayers

Journal of applied physics, 1993-12, Vol.74 (11), p.6883-6887

1993

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Dislocation structure in InxGa1-xAs/GaAs strained-layer superlattices

Journal of applied physics, 1987-09, Vol.62 (5), p.1713-1716

1987

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Epitaxial tilt of partially relaxed InGaAs layers grown on (100) GaAs substrates

Canadian journal of physics, 1992-10, Vol.70 (10-11), p.838-842

1992

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Raman scattering from In sub 1 sub - sub x Al sub x Sb metastable epilayers

Journal of applied physics, 1993-01, Vol.74 (11), p.6883-6887

1993

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Structural Defects in Partially Relaxed InGaAs Layers

MRS proceedings, 1993, Vol.325, Article 217

1993

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X-ray diffraction characterization of superlattices grown on offcut (100) substrates

Influence of growth conditions on the residual strain in thick metalorganic vapor phase epitaxy grown InGaAs epilayers

Structural characterization of InGaAs/GaAs superlattices grown on misoriented substrates

X-ray diffraction of relaxed InGaAs heterostructures grown on misoriented (100) GaAs substrates

Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE

Structural investigation of MOVPE grown InGaAs buffer layers

Adsorption of Sn on cleaved Si(111) surfaces

An InGaAs-InP position-sensing photodetector

Measurement of residual strain in InGaAs buffer layers

Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods

Growth and characterization of Si1-xGex and Ge epilayers on (100) Si

Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates

Structural properties of partially relaxed InxGa1-xAs layers grown on (100) and misoriented GaAs substrates

Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering

Solar module technology

Strain relaxation in InAlSb epilayers grown on InSb substrates

The growth of gallium arsenide on Si(100) by molecular-beam epitaxy

Relaxation in tensile-strained InAlSb/InSb heterostructures

Charge carrier effect on the microwave losses observed on traveling-wave electrodes used in electro-optic modulators

Heteroepitaxy of Ge on (100) Si substrates

Raman scattering from In1-xAlxSb metastable epilayers

Dislocation structure in InxGa1-xAs/GaAs strained-layer superlattices

Epitaxial tilt of partially relaxed InGaAs layers grown on (100) GaAs substrates

Raman scattering from In sub 1 sub - sub x Al sub x Sb metastable epilayers

Structural Defects in Partially Relaxed InGaAs Layers

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