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Brillouin scattering studies of polymeric nanostructures

Journal of polymer science. Part B, Polymer physics, 2004-03, Vol.42 (6), p.1106-1113

2004

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Relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified resists

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001-07, Vol.19 (4), p.1374-1378

2001

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Transfer etching of bilayer resists in oxygen-based plasmas

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2000-07, Vol.18 (4), p.1411-1419

2000

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Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-03, Vol.22 (2), p.647-653

2004

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RTA-Driven Intra-Die Variations in Stage Delay, and Parametric Sensitivities for 65nm Technology

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers, 2006, p.170-171

2006

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Development of 157 nm positive resists

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-11, Vol.19 (6), p.2678-2684

2001

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Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects

2021 IEEE International Interconnect Technology Conference (IITC), 2021, p.1-2

2021

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Brillouin Scattering Studies of Polymeric Nanostructures

Bulletin of the American Physical Society, 2004-03, Vol.49 (1)

2004

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Etching silicon-containing bilayer resists in ammonia-based plasmas

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-05, Vol.23 (3), p.900-907

2005

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Etching of polysilicon in inductively coupled Cl 2 and HBr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kinetics

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1064-1076

2002

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Etching of polysilicon in inductively coupled Cl 2 and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1077-1083

2002

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A novel graded antireflective coating with built-in hardmask properties enabling 65nm and below CMOS device patterning

IEEE International Electron Devices Meeting 2003, 2003, p.28.5.1-28.5.4

2003

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Etching of polysilicon in inductively coupled Cl 2 and HBr discharges. IV. Calculation of feature charging in profile evolution

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1084-1095

2002

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Etching of polysilicon in inductively coupled Cl 2 and HBr discharges. I. Experimental characterization of polysilicon profiles

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1055-1063

2002

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Controlling line-edge roughness and reactive ion etch lagin sub-150 nm features in borophosphosilicate glass

Journal of applied physics, 2007-04, Vol.101 (7), p.076102-076102-3

2007

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Integrated non- S O 2 underlayer and improved line-edge-roughness dielectric etch process using 193 nm bilayer resist

Applied physics letters, 2006-06, Vol.88 (23), p.231501-231501-2

2006

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Integrated non-SO2 underlayer and improved line-edge-roughness dielectric etch process using 193nm bilayer resist

Applied physics letters, 2006-06, Vol.88 (23)

2006

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Controlling line-edge roughness and reactive ion etch lag in sub-150 nm features in borophosphosilicate glass

Journal of applied physics, 2007-04, Vol.101 (7)

2007

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Etching of polysilicon in inductively coupled Cl2 and HBr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kinetics

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2002-05, Vol.20 (3), p.1064-1076

2002

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Etching of polysilicon in inductively coupled Cl2 and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2002-05, Vol.20 (3), p.1077-1083

2002

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Feature profile evolution during the high -density plasma etching of polysilicon

Mahorowala, Arpan P

1998

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Etching of polysilicon in inductively coupled Cl2 and HBr discharges. IV. Calculation of feature charging in profile evolution

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2002-05, Vol.20 (3), p.1084-1095

2002

Volltextzugriff (PDF)

Etching of polysilicon in inductively coupled Cl2 and HBr discharges. I. Experimental characterization of polysilicon profiles

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2002-05, Vol.20 (3), p.1055-1063

2002

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Brillouin scattering studies of polymeric nanostructures

Relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified resists

Transfer etching of bilayer resists in oxygen-based plasmas

Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes

RTA-Driven Intra-Die Variations in Stage Delay, and Parametric Sensitivities for 65nm Technology

Development of 157 nm positive resists

Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects

Brillouin Scattering Studies of Polymeric Nanostructures

Etching silicon-containing bilayer resists in ammonia-based plasmas

Etching of polysilicon in inductively coupled Cl 2 and HBr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kinetics

Etching of polysilicon in inductively coupled Cl 2 and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching

A novel graded antireflective coating with built-in hardmask properties enabling 65nm and below CMOS device patterning

Etching of polysilicon in inductively coupled Cl 2 and HBr discharges. IV. Calculation of feature charging in profile evolution

Etching of polysilicon in inductively coupled Cl 2 and HBr discharges. I. Experimental characterization of polysilicon profiles

Controlling line-edge roughness and reactive ion etch lagin sub-150 nm features in borophosphosilicate glass

Integrated non- S O 2 underlayer and improved line-edge-roughness dielectric etch process using 193 nm bilayer resist

Integrated non-SO2 underlayer and improved line-edge-roughness dielectric etch process using 193nm bilayer resist

Controlling line-edge roughness and reactive ion etch lag in sub-150 nm features in borophosphosilicate glass

Etching of polysilicon in inductively coupled Cl2 and HBr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kinetics

Etching of polysilicon in inductively coupled Cl2 and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching

Feature profile evolution during the high -density plasma etching of polysilicon

Etching of polysilicon in inductively coupled Cl2 and HBr discharges. IV. Calculation of feature charging in profile evolution

Etching of polysilicon in inductively coupled Cl2 and HBr discharges. I. Experimental characterization of polysilicon profiles

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