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Ex Vivo Modeling of Oral HIV Transmission in Human Palatine Tonsil

The journal of histochemistry and cytochemistry, 2005-05, Vol.53 (5), p.631-642

2005

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Ormeloxifene nanotherapy for cervical cancer treatment

International journal of nanomedicine, 2019-09, Vol.14, p.7107-7121

2019

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The HIV-associated tuberculosis epidemic—when will we act?

The Lancet (British edition), 2010-05, Vol.375 (9729), p.1906-1919

2010

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Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

Applied physics letters, 1999-12, Vol.75 (25), p.4001-4003

1999

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Is operational research delivering the goods? The journey to success in low-income countries

The Lancet infectious diseases, 2012-05, Vol.12 (5), p.415-421

2012

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Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon

Applied surface science, 2001-09, Vol.181 (1), p.78-93

2001

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Visible light emission from thin films containing Si, O, N, and H

Journal of applied physics, 1995-09, Vol.78 (6), p.4020-4030

1995

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Direct observations of dislocation substructures formed by nano-indentation of the α-phase in an α/β titanium alloy

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2005-07, Vol.400, p.463-466

2005

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Preliminary Results from a Sub-Angstrom TEM

Microscopy and microanalysis, 2006-08, Vol.12 (S02), p.1478-1479

2006

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Nano-analysis of the Metallic Multilayers Using High Resolution Microscopy

Microscopy and microanalysis, 2006-08, Vol.12 (S02), p.716-717

2006

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Oxygen gettering and precipitation at MeV Si+ ion implantation induced damage in silicon

Applied physics letters, 1996-12, Vol.69 (25), p.3899-3901

1996

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Thermochemical stability of silicon–oxygen–carbon alloy thin films: A model system for chemical and structural relaxation at SiC–SiO2 interfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-07, Vol.17 (4), p.2170-2177

1999

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A Low‐Thermal‐Budget In Situ Doped Multilayer Silicon Epitaxy Process for MOSFET Channel Engineering

Journal of the Electrochemical Society, 1999-03, Vol.146 (3), p.1189-1196

1999

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Phase transitions during solid-state formation of cobalt germanide by rapid thermal annealing

Journal of applied physics, 1993-10, Vol.74 (7), p.4455-4460

1993

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Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

Journal of the Electrochemical Society, 1994-11, Vol.141 (11), p.3269-3273

1994

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Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si

Journal of materials research, 1990-09, Vol.5 (9), p.1900-1907

1990

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Effects of carbon implantation on generation lifetime in silicon

Applied physics letters, 1996-01, Vol.68 (4), p.499-501

1996

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Quality of Selective Silicon Epitaxial Films Deposited Using Disilane and Chlorine

Journal of the Electrochemical Society, 1999-06, Vol.146 (6), p.2337-2343

1999

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On the Role of Chlorine in Selective Silicon Epitaxy by Chemical Vapor Deposition

Journal of the Electrochemical Society, 1996-10, Vol.143 (10), p.3290-3296

1996

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Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

Journal of the Electrochemical Society, 1999-08, Vol.146 (8), p.3079-3086

1999

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Effects of Oxygen during Selective Silicon Epitaxial Growth Using Disilane and Chlorine

Journal of the Electrochemical Society, 1999-06, Vol.146 (6), p.2344-2352

1999

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Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon–germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

Journal of applied physics, 1998-05, Vol.83 (10), p.5469-5476

1998

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Optimization of Process Conditions for Selective Silicon Epitaxy Using Disilane, Hydrogen, and Chlorine

Journal of the Electrochemical Society, 1997-09, Vol.144 (9), p.3309-3315

1997

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Ion-beam-induced crystallization and amorphization of silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1987, Vol.19, p.435-442

1987

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Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

Journal of applied physics, 1997-12, Vol.82 (11), p.5811-5815

1997

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Ex Vivo Modeling of Oral HIV Transmission in Human Palatine Tonsil

Ormeloxifene nanotherapy for cervical cancer treatment

The HIV-associated tuberculosis epidemic—when will we act?

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

Is operational research delivering the goods? The journey to success in low-income countries

Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon

Visible light emission from thin films containing Si, O, N, and H

Direct observations of dislocation substructures formed by nano-indentation of the α-phase in an α/β titanium alloy

Preliminary Results from a Sub-Angstrom TEM

Nano-analysis of the Metallic Multilayers Using High Resolution Microscopy

Oxygen gettering and precipitation at MeV Si+ ion implantation induced damage in silicon

Thermochemical stability of silicon–oxygen–carbon alloy thin films: A model system for chemical and structural relaxation at SiC–SiO2 interfaces

A Low‐Thermal‐Budget In Situ Doped Multilayer Silicon Epitaxy Process for MOSFET Channel Engineering

Phase transitions during solid-state formation of cobalt germanide by rapid thermal annealing

Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si

Effects of carbon implantation on generation lifetime in silicon

Quality of Selective Silicon Epitaxial Films Deposited Using Disilane and Chlorine

On the Role of Chlorine in Selective Silicon Epitaxy by Chemical Vapor Deposition

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

Effects of Oxygen during Selective Silicon Epitaxial Growth Using Disilane and Chlorine

Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon–germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

Optimization of Process Conditions for Selective Silicon Epitaxy Using Disilane, Hydrogen, and Chlorine

Ion-beam-induced crystallization and amorphization of silicon

Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

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