UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors

Journal of applied physics, 2006-05, Vol.99 (9)

2006

Volltextzugriff (PDF)

A Novel Method to Extract Channel Mobility and Parasitic Resistance of 2-D Material MOSFETs

IEEE transactions on electron devices, 2024-10, Vol.71 (10), p.6424-6429

2024

Volltextzugriff (PDF)

Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6680-6686

2023

Volltextzugriff (PDF)

Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2003-06, Vol.82 (22), p.3976-3978

2003

Volltextzugriff (PDF)

Building high performance transistors on carbon nanotube channel

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

Volltextzugriff (PDF)

Edge Effects on Gate Tunneling Current in HEMTs

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2614-2622

2007

Volltextzugriff (PDF)

Scaled contact length with low contact resistance in monolayer 2D channel transistors

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

Volltextzugriff (PDF)

A Closed-Form Model for Thermionic Trap-Assisted Tunneling

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.557-564

2008

Volltextzugriff (PDF)

On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs

IEEE electron device letters, 2006-02, Vol.27 (2), p.87-89

2006

Volltextzugriff (PDF)

Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS 2 Channel Transistors

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6680-6686

2023

Volltextzugriff (PDF)

Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

Volltextzugriff (PDF)

On the Extreme Scaling of Transistors with Monolayer MOS2 Channel

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2024, p.1-2

2024

Volltextzugriff (PDF)

A model for the high field leakage current in nitrided oxides

Journal of applied physics, 2007-05, Vol.101 (10), p.106104-106104-3

2007

Volltextzugriff (PDF)

Thermionic trap-assisted tunneling model and its applicationto leakage current in nitrided oxides and Al Ga N ∕ Ga N highelectron mobility transistors

Journal of applied physics, 2006-05, Vol.99 (9), p.093701-093701-6

2006

Volltextzugriff (PDF)

Unified closed-form model of thermionic-field and field emissions through a triangular potential barrier

Applied physics letters, 2003-03, Vol.82 (9), p.1431-1433

2003

Volltextzugriff (PDF)

Comprehensive Physics Based TCAD Model for 2D MX2 Channel Transistors

2022 International Electron Devices Meeting (IEDM), 2022, p.28.4.1-28.4.4

2022

Volltextzugriff (PDF)

Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

Volltextzugriff (PDF)

1 – 17 von 17

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(11)
Mit Volltextzugriff
(17)

Publikationsform

Artikel
(11)
Tagungsberichte
(6)

Sprache

Englisch
(16)

Erscheinungsjahr

n.n

Kollektion

Zeitschrift / Serie

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors

A Novel Method to Extract Channel Mobility and Parasitic Resistance of 2-D Material MOSFETs

Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors

Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Building high performance transistors on carbon nanotube channel

Edge Effects on Gate Tunneling Current in HEMTs

Scaled contact length with low contact resistance in monolayer 2D channel transistors

A Closed-Form Model for Thermionic Trap-Assisted Tunneling

On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs

Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS 2 Channel Transistors

Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel

On the Extreme Scaling of Transistors with Monolayer MOS2 Channel

A model for the high field leakage current in nitrided oxides

Thermionic trap-assisted tunneling model and its applicationto leakage current in nitrided oxides and Al Ga N ∕ Ga N highelectron mobility transistors

Unified closed-form model of thermionic-field and field emissions through a triangular potential barrier

Comprehensive Physics Based TCAD Model for 2D MX2 Channel Transistors

Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact

Suchergebnisse filtern