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Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact

Mahapatra, Souvik

1st Edition 2022, 2021

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BTI Analysis Tool-Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation

IEEE transactions on electron devices, 2018-02, Vol.65 (2), p.392-403

2018

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Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2461-2469

2018

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On the Universality of Hot Carrier Degradation: Multiple Probes, Various Operating Regimes, and Different MOSFET Architectures

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3088-3094

2018

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Anion Tuned Structural Modulation and Nonlinear Optical Effects of Metal‐Ion Directed 310‐Helix Networks

Chemistry : a European journal, 2023-12, Vol.29 (72), p.e202303135-n/a

2023

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Foldamer Nanotubes Mediated Label‐Free Detection of Protein‐Small Molecule Interactions

Chemistry : a European journal, 2023-07, Vol.29 (42), p.e202300479-n/a

2023

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On the Impact of Time-Zero Variability, Variable NBTI, and Stochastic TDDB on SRAM Cells

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2764-2770

2016

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Device to Circuit Framework for Activity-Dependent NBTI Aging in Digital Circuits

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.316-323

2019

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A Review of Hot Carrier Degradation in n-Channel MOSFETs-Part I: Physical Mechanism

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2660-2671

2020

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Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling

Mahapatra, Souvik

1st ed. 2015, 2015

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Design of Chiral β‐Double Helices from γ‐Peptide Foldamers

Angewandte Chemie International Edition, 2024-01, Vol.63 (2), p.e202316309-n/a

International ed. in English, 2024

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Modeling of HCD Kinetics Under Full VG-VD Space, Different Experimental Conditions and Across Different Device Architectures

IEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1-1

2020

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Modeling and Analysis of PBTI, and HCD in Presence of Self-Heating in GAA-SNS NFETs

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6576-6581

2022

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A Review of Hot Carrier Degradation in n-Channel MOSFETs-Part II: Technology Scaling

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2672-2681

2020

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A review of NBTI mechanisms and models

Microelectronics and reliability, 2018-02, Vol.81, p.127-135

2018

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Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.1281-1288

2020

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A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying V G /V D Stress in GAA Nanosheet PFETs

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3535-3541

2022

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A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3535-3541

2022

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A physical model for long term data retention characteristics in 3D NAND flash memory

Solid-state electronics, 2023-01, Vol.199, p.108497, Article 108497

2023

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A SPICE Compatible Compact Model for Hot-Carrier Degradation in MOSFETs Under Different Experimental Conditions

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.839-846

2019

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A consistent physical framework for N and P BTI in HKMG MOSFETs

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.5A.3.1-5A.3.10

2012

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Band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.236-242

2009

Volltextzugriff (PDF)

Design of Chiral β‐Double Helices from γ‐Peptide Foldamers

Angewandte Chemie, 2024-01, Vol.136 (2), p.n/a

2024

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Controversial issues in negative bias temperature instability

Microelectronics and reliability, 2018-02, Vol.81, p.244-251

2018

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Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact

BTI Analysis Tool-Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

On the Universality of Hot Carrier Degradation: Multiple Probes, Various Operating Regimes, and Different MOSFET Architectures

Anion Tuned Structural Modulation and Nonlinear Optical Effects of Metal‐Ion Directed 310‐Helix Networks

Foldamer Nanotubes Mediated Label‐Free Detection of Protein‐Small Molecule Interactions

On the Impact of Time-Zero Variability, Variable NBTI, and Stochastic TDDB on SRAM Cells

Device to Circuit Framework for Activity-Dependent NBTI Aging in Digital Circuits

A Review of Hot Carrier Degradation in n-Channel MOSFETs-Part I: Physical Mechanism

Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling

Design of Chiral β‐Double Helices from γ‐Peptide Foldamers

Modeling of HCD Kinetics Under Full VG-VD Space, Different Experimental Conditions and Across Different Device Architectures

Modeling and Analysis of PBTI, and HCD in Presence of Self-Heating in GAA-SNS NFETs

A Review of Hot Carrier Degradation in n-Channel MOSFETs-Part II: Technology Scaling

A review of NBTI mechanisms and models

Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs

A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying V G /V D Stress in GAA Nanosheet PFETs

A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs

A physical model for long term data retention characteristics in 3D NAND flash memory

A SPICE Compatible Compact Model for Hot-Carrier Degradation in MOSFETs Under Different Experimental Conditions

A consistent physical framework for N and P BTI in HKMG MOSFETs

Band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme

Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs

Design of Chiral β‐Double Helices from γ‐Peptide Foldamers

Controversial issues in negative bias temperature instability

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