UB Paderborn / Katalog / Suche / in CDI

Effects of substrate temperature on the properties of In0.48Ga0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell

Journal of crystal growth, 1998-08, Vol.191 (4), p.613-620

1998

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266TiP A multicenter, prospective, longitudinal registry of prostate cancer in Asia

Annals of oncology, 2015-12, Vol.26, p.ix71-ix71

2015

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Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures

Journal of crystal growth, 2000-06, Vol.216 (1-4), p.51-56

2000

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Distinct Pattern of Commensal Gut Microbiota in Toddlers with Eczema

International Archives of Allergy and Immunology, 2006-05, Vol.140 (2), p.157-163

2006

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The effect of elastic strain on the optical properties of InGaP/GaAs grown using a valved phosphorus cracker cell in solid source MBE

Journal of alloys and compounds, 1998-10, Vol.280 (1-2), p.299-305

1998

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Distinct pattern of commensal gut microbiota in toddlers with eczema

Alternative medicine review, 2006-06, Vol.11 (2), p.176

2006

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Detection of fecal Bifidobacterium infantis in the first year of life in infants at risk of atopy supplemented with Lactobacillus rhamnosus GG and Bifidobacterium longum from birth till 6 months old

The World Allergy Organization journal, 2007-11, p.S130

2007

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V/III ratio and silicon doping effects on the properties of In 1− xGa xP/GaAs grown by solid source molecular beam epitaxy

Optical materials, 2000, Vol.14 (1), p.59-68

2000

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Defect luminescence of GaN grown by pulsed laser deposition

Journal of crystal growth, 2001, Vol.222 (3), p.497-502

2001

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Characterisation of gallium nitride grown by pulsed laser deposition

Mah, K.W

2002

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Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga 0.52In 0.48P grown on GaAs substrates

Journal of crystal growth, 2000, Vol.208 (1), p.197-204

2000

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Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates

Journal of crystal growth, 2000, Vol.208 (1-4), p.197-204

2000

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Comparative study of the expansion dynamics of Ga+ ions in the laser ablation of Ga and GaN using time-resolved extreme UV absorption spectroscopy

Applied surface science, 2000-12, Vol.168 (1-4), p.150-153

2000

Volltextzugriff (PDF)

Effects of substrate temperature on the properties of In 0.48Ga 0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell

Journal of crystal growth, 1998, Vol.191 (4), p.613-620

1998

Volltextzugriff (PDF)

Optimization of In xGa 1− xP/In 0.2Ga 0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2000, Vol.75 (2), p.110-114

2000

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V/III ratio and silicon doping effects on the properties of In1−xGaxP/GaAs grown by solid source molecular beam epitaxy

Optical materials, 2000-03, Vol.14 (1), p.59-68

2000

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Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphere

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.128-130

2001

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Photoluminescence and electron transport properties of silicon-doped Ga/sub 0.52/In/sub 0.48/P/GaAs grown using a valved phosphorus cracker cell in solid source molecular beam epitaxy

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107), 2000, p.166-169

2000

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Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell

Thin solid films, 1998-08, Vol.326 (1), p.233-237

1998

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Electrical and optical properties of InP grown at different cracking temperature and V/III ratio using a valve phosphorous cracker cell

Journal of crystal growth, 1998-04, Vol.186 (4), p.475-479

1998

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Optimization of InxGa1−xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-06, Vol.75 (2-3), p.110-114

2000

Volltextzugriff (PDF)

Molecular beam epitaxial growth of InP using a valved phosphorus cracker cell: optimization of electrical, optical and surface morphology characteristics

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.108-111

1998

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Observation of weak ordering effects and surface morphology study of InGaP grown by solid source molecular beam epitaxy

Microelectronics, 2000-01, Vol.31 (1), p.15-21

2000

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Trends in quality indicators of end-of-life care for women with gynecologic malignancies in Ontario, Canada

Gynecologic oncology, 2022-11, Vol.167 (2), p.247-255

2022

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The structural basis for serotype-specific neutralization of dengue virus by a human antibody

Science translational medicine, 2012-06, Vol.4 (139), p.139ra83

2012

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Effects of substrate temperature on the properties of In0.48Ga0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell

266TiP A multicenter, prospective, longitudinal registry of prostate cancer in Asia

Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures

Distinct Pattern of Commensal Gut Microbiota in Toddlers with Eczema

The effect of elastic strain on the optical properties of InGaP/GaAs grown using a valved phosphorus cracker cell in solid source MBE

Distinct pattern of commensal gut microbiota in toddlers with eczema

Detection of fecal Bifidobacterium infantis in the first year of life in infants at risk of atopy supplemented with Lactobacillus rhamnosus GG and Bifidobacterium longum from birth till 6 months old

V/III ratio and silicon doping effects on the properties of In 1− xGa xP/GaAs grown by solid source molecular beam epitaxy

Defect luminescence of GaN grown by pulsed laser deposition

Characterisation of gallium nitride grown by pulsed laser deposition

Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga 0.52In 0.48P grown on GaAs substrates

Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates

Comparative study of the expansion dynamics of Ga+ ions in the laser ablation of Ga and GaN using time-resolved extreme UV absorption spectroscopy

Effects of substrate temperature on the properties of In 0.48Ga 0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell

Optimization of In xGa 1− xP/In 0.2Ga 0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy

V/III ratio and silicon doping effects on the properties of In1−xGaxP/GaAs grown by solid source molecular beam epitaxy

Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphere

Photoluminescence and electron transport properties of silicon-doped Ga/sub 0.52/In/sub 0.48/P/GaAs grown using a valved phosphorus cracker cell in solid source molecular beam epitaxy

Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell

Electrical and optical properties of InP grown at different cracking temperature and V/III ratio using a valve phosphorous cracker cell

Optimization of InxGa1−xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy

Molecular beam epitaxial growth of InP using a valved phosphorus cracker cell: optimization of electrical, optical and surface morphology characteristics

Observation of weak ordering effects and surface morphology study of InGaP grown by solid source molecular beam epitaxy

Trends in quality indicators of end-of-life care for women with gynecologic malignancies in Ontario, Canada

The structural basis for serotype-specific neutralization of dengue virus by a human antibody

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