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Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies

IEEE journal of solid-state circuits, 2006-11, Vol.41 (11), p.2577-2588

2006

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Low dielectric constant materials for microelectronics

Journal of applied physics, 2003-06, Vol.93 (11), p.8793-8841

2003

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Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions

Applied physics letters, 2004-04, Vol.84 (15), p.2838-2840

2004

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Low-k dielectric materials

Materials Today, 2004-01, Vol.7 (1), p.34-39

2004

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Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

IEEE electron device letters, 2008-12, Vol.29 (12), p.1398-1401

2008

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Influence of the electron mean free path on the resistivity of thin metal films

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.146-152

2004

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Analysis of the size effect in electroplated fine copper wires and a realistic assessment to model copper resistivity

Journal of applied physics, 2007-03, Vol.101 (6), p.063703-063703-11

2007

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Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-09, Vol.20 (5), p.1923-1928

2002

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Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation

Journal of applied physics, 2006-03, Vol.99 (5), p.053511-053511-7

2006

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Grain Growth, Stress, and Impurities in Electroplated Copper

Journal of materials research, 2002-03, Vol.17 (3), p.582-589

2002

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Ni- and Co-based silicides for advanced CMOS applications

Microelectronic engineering, 2003-11, Vol.70 (2), p.158-165

2003

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In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines

Journal of applied physics, 2001-07, Vol.90 (1), p.167-174

2001

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Impact of line-edge roughness on resistance and capacitance of scaled interconnects

Microelectronic engineering, 2007-11, Vol.84 (11), p.2733-2737

2007

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Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

Journal of applied physics, 2002-12, Vol.92 (12), p.7641-7646

2002

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Study of metal-related deep-level defects in germanide Schottky barriers on n -type germanium

Journal of applied physics, 2008-07, Vol.104 (2), p.023705-023705-7

2008

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Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-11, Vol.19 (6), p.2026-2037

2001

Volltextzugriff (PDF)

Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates

IEEE electron device letters, 2006, Vol.27 (1), p.34-36

2006

Volltextzugriff (PDF)

Compressive stress relaxation through buckling of a low- k polymer-thin cap layer system

Applied physics letters, 2003-03, Vol.82 (9), p.1380-1382

2003

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Diffusion of solvents in thin porous films

Colloids and surfaces. A, Physicochemical and engineering aspects, 2007-06, Vol.300 (1), p.111-116

2007

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Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

Applied physics letters, 2007-01, Vol.90 (3)

2007

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Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n -type germanium

Applied physics letters, 2006-05, Vol.88 (18), p.183506-183506-3

2006

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Self-annealing characterization of electroplated copper films

Microelectronic engineering, 2000, Vol.50 (1), p.449-457

2000

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Two-step room temperature grain growth in electroplated copper

Journal of applied physics, 1999-10, Vol.86 (7), p.3642-3645

1999

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Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Journal of applied physics, 1998-09, Vol.84 (6), p.3226-3231

1998

Volltextzugriff (PDF)

Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects

IEEE electron device letters, 2006-02, Vol.27 (2), p.99-101

2006

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Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies

Low dielectric constant materials for microelectronics

Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions

Low-k dielectric materials

Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

Influence of the electron mean free path on the resistivity of thin metal films

Analysis of the size effect in electroplated fine copper wires and a realistic assessment to model copper resistivity

Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation

Grain Growth, Stress, and Impurities in Electroplated Copper

Ni- and Co-based silicides for advanced CMOS applications

In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines

Impact of line-edge roughness on resistance and capacitance of scaled interconnects

Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

Study of metal-related deep-level defects in germanide Schottky barriers on n -type germanium

Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates

Compressive stress relaxation through buckling of a low- k polymer-thin cap layer system

Diffusion of solvents in thin porous films

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n -type germanium

Self-annealing characterization of electroplated copper films

Two-step room temperature grain growth in electroplated copper

Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects

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