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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.547-556

2008

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Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3414-3420

2008

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Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter?

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3009-3017

2009

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"In het volle zonlicht" : de daguerreotypieën van het Museum Enschedé te Haarlem

2009

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Nonvolatile multilevel memories for digital applications

Proceedings of the IEEE, 1998-12, Vol.86 (12), p.2399-2423

1998

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Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

IEEE electron device letters, 2007-07, Vol.28 (7), p.613-615

2007

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Reliability of Strained-Si Devices With Post-Oxide-Deposition Strain Introduction

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3432-3441

2008

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Physical understanding and modeling of SANOS retention in programmed state

Solid-state electronics, 2008-04, Vol.52 (4), p.577-583

2008

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Preisach model for the simulation of ferroelectric capacitors

Journal of applied physics, 2001-03, Vol.89 (6), p.3420-3425

2001

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High-K Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality-A Mobility Study

IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.497-503

2007

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High- \kappa Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality-A Mobility Study

IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.497-503

2007

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Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETs

ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.138-141

2008

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Dependency of the properties of SrxBiyTa2O9 thin films on the Sr and Bi stoichiometry

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-04, Vol.118 (1-3), p.34-38

2005

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Observation of single interface traps in submicron MOSFET's by charge pumping

IEEE transactions on electron devices, 1996-06, Vol.43 (6), p.940-945

1996

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Voltage shift and deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin film by defects

Applied physics letters, 1996-08, Vol.69 (9), p.1223-1225

1996

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Trends in Microelectronics, Optical Detectors, and Biosensors

Advanced engineering materials, 2001-10, Vol.3 (10), p.781-787

2001

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New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

IEEE electron device letters, 2006-05, Vol.27 (5), p.405-408

2006

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An easy-to-use mismatch model for the MOS transistor

IEEE journal of solid-state circuits, 2002-08, Vol.37 (8), p.1056-1064

2002

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Evaluation of a pre-objective scan system for the laser recrystallization of silicon on insulator material

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992, Vol.31 (8), p.2631-2639

1992

Volltextzugriff (PDF)

Analysis of local mechanical stresses in and near tungsten lines on silicon substrate

Journal of applied physics, 1999-05, Vol.85 (9), p.6477-6485

1999

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Scaling CMOS: Finding the gate stack with the lowest leakage current

Solid-state electronics, 2005-05, Vol.49 (5), p.695-701

2005

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Write/erase degradation in source side injection flash EEPROM's: characterization techniques and wearout mechanisms

IEEE transactions on electron devices, 1995-11, Vol.42 (11), p.1992-1998

1995

Volltextzugriff (PDF)

Root Cause of Charge Loss in a Nitride-Based Localized Trapping Memory Cell

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1351-1359

2007

Volltextzugriff (PDF)

Stress in thin micro-zone-molten crystalline silicon films on solid substrates

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP, 1993-07, Vol.32 (7), p.3217-3226

1993

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A comprehensive study of boron and carbon diffusion modelsin SiGeC heterojunction bipolar transistors

Journal of applied physics, 2005-09, Vol.98 (6), p.063530-063530-9

2005

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)

Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter?

"In het volle zonlicht" : de daguerreotypieën van het Museum Enschedé te Haarlem

Nonvolatile multilevel memories for digital applications

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

Reliability of Strained-Si Devices With Post-Oxide-Deposition Strain Introduction

Physical understanding and modeling of SANOS retention in programmed state

Preisach model for the simulation of ferroelectric capacitors

High-K Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality-A Mobility Study

High- \kappa Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality-A Mobility Study

Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETs

Dependency of the properties of SrxBiyTa2O9 thin films on the Sr and Bi stoichiometry

Observation of single interface traps in submicron MOSFET's by charge pumping

Voltage shift and deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin film by defects

Trends in Microelectronics, Optical Detectors, and Biosensors

New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

An easy-to-use mismatch model for the MOS transistor

Evaluation of a pre-objective scan system for the laser recrystallization of silicon on insulator material

Analysis of local mechanical stresses in and near tungsten lines on silicon substrate

Scaling CMOS: Finding the gate stack with the lowest leakage current

Write/erase degradation in source side injection flash EEPROM's: characterization techniques and wearout mechanisms

Root Cause of Charge Loss in a Nitride-Based Localized Trapping Memory Cell

Stress in thin micro-zone-molten crystalline silicon films on solid substrates

A comprehensive study of boron and carbon diffusion modelsin SiGeC heterojunction bipolar transistors

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