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Synthesis of mesoscale ordered two-dimensional π-conjugated polymers with semiconducting properties

Nature materials, 2020-08, Vol.19 (8), p.874-880

2020

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Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.13-19

2009

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Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

IEEE electron device letters, 2007-02, Vol.28 (2), p.86-89

2007

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Temperature-induced molecular reorganization on Au(111) driven by oligomeric defects

Nanoscale, 2019-11, Vol.11 (41), p.19468-19476

2019

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Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

IEEE electron device letters, 2009-02, Vol.30 (2), p.103-106

2009

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Inter-regional trends in causes of childhood blindness and low vision in Ghana

Clinical and experimental optometry, 2020-09, Vol.103 (5), p.684-692

2020

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Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

IEEE electron device letters, 2008-05, Vol.29 (5), p.416-418

2008

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Near infrared integrated photonic switches for portable quantum sensors

Journal of physics. Conference series, 2021-05, Vol.1919 (1), p.12007

2021

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The emergence and ongoing convergent evolution of the SARS-CoV-2 N501Y lineages

Cell, 2021-09, Vol.184 (20), p.5189-5200.e7

2021

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Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run

Journal of lightwave technology, 2003-01, Vol.21 (1), p.211-217

2003

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Selection Analysis Identifies Clusters of Unusual Mutational Changes in Omicron Lineage BA.1 That Likely Impact Spike Function

Molecular biology and evolution, 2022, Vol.39 (4)

2022

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Adaptively Detect and Accurately Resolve Macro-scale Shocks in an Efficient Equation-Free Multiscale Simulation

SIAM journal on scientific computing, 2022-01, Vol.44 (4), p.A2557-A2581

2022

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Conserved recombination patterns across coronavirus subgenera

Virus evolution, 2022-12, Vol.8 (2), p.veac054

2022

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Laser drilling of micro-holes in single crystal silicon, indium phosphide and indium antimonide using a continuous wave (CW) 1070 nm fibre laser with millisecond pulse widths

Procedia CIRP, 2018, Vol.74, p.407-412

2018

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Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

Journal of crystal growth, 2000-02, Vol.209 (2), p.486-491

2000

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Relative Permeability Coupled Saturation-Height Models on the Basis of Hydraulic (Flow) Units in a Gas Field

SPE reservoir evaluation & engineering, 2008-12, Vol.11 (6), p.1013-1028

2008

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Nitrogen incorporation into GaAs(N), Al0.3Ga0.7As(N) and In0.15Ga0.85As(N) by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine

Journal of crystal growth, 2001-09, Vol.231 (1-2), p.31-40

2001

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Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy

Applied physics letters, 2002-02, Vol.80 (6), p.914-916

2002

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High-performance InSb based quantum well field effect transistors for low-power dissipation applications

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Analysis of DCaRF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

IEEE transactions on electron devices, 2009-01, Vol.56 (1)

2009

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Nitrogen incorporation into GaAs(N), Al0.3Ga0.7As(N) and In0.115Ga0.85As(N) by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine

Journal of crystal growth, 2001, Vol.231 (1-2), p.31-40

2001

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Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs

2007 70th ARFTG Microwave Measurement Conference (ARFTG), 2007, p.1-4

2007

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Pressure studies of conduction-band N-pair-state mixing in dilute GaAs1−xNx alloys

Physica. E, Low-dimensional systems & nanostructures, 2004-01, Vol.20 (3-4), p.317-320

2004

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Chapter 3 - The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors

Dilute Nitride Semiconductors, 2005, p.119-136

Maclean, Jessica O.

2005

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X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling

2008 European Microwave Integrated Circuit Conference, 2008, p.190-193

2008

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Synthesis of mesoscale ordered two-dimensional π-conjugated polymers with semiconducting properties

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

Temperature-induced molecular reorganization on Au(111) driven by oligomeric defects

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

Inter-regional trends in causes of childhood blindness and low vision in Ghana

Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

Near infrared integrated photonic switches for portable quantum sensors

The emergence and ongoing convergent evolution of the SARS-CoV-2 N501Y lineages

Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run

Selection Analysis Identifies Clusters of Unusual Mutational Changes in Omicron Lineage BA.1 That Likely Impact Spike Function

Adaptively Detect and Accurately Resolve Macro-scale Shocks in an Efficient Equation-Free Multiscale Simulation

Conserved recombination patterns across coronavirus subgenera

Laser drilling of micro-holes in single crystal silicon, indium phosphide and indium antimonide using a continuous wave (CW) 1070 nm fibre laser with millisecond pulse widths

Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

Relative Permeability Coupled Saturation-Height Models on the Basis of Hydraulic (Flow) Units in a Gas Field

Nitrogen incorporation into GaAs(N), Al0.3Ga0.7As(N) and In0.15Ga0.85As(N) by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine

Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy

High-performance InSb based quantum well field effect transistors for low-power dissipation applications

Analysis of DCaRF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Nitrogen incorporation into GaAs(N), Al0.3Ga0.7As(N) and In0.115Ga0.85As(N) by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine

Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs

Pressure studies of conduction-band N-pair-state mixing in dilute GaAs1−xNx alloys

Chapter 3 - The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors

X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling

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