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Vibrational properties and stabilization mechanism of the amorphous phase of doped GeTe

Physical review. B, Condensed matter and materials physics, 2013-07, Vol.88 (1), Article 014203

2013

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Carbon-doped GeTe: A promising material for Phase-Change Memories

Solid-state electronics, 2011-11, Vol.65-66, p.197-204

2011

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The effect of Ta interface on the crystallization of amorphous phase change material thin films

Applied physics letters, 2014-06, Vol.104 (22)

2014

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Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation

Applied physics letters, 2012-12, Vol.101 (23)

2012

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A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics

Applied physics letters, 2014-04, Vol.104 (14)

2014

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Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

Microelectronic engineering, 2005-12, Vol.82 (3-4), p.248-253

2005

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Evolution of Cu microstructure and resistivity during thermal treatment of damascene line: Influence of line width and temperature

Microelectronic engineering, 2007-11, Vol.84 (11), p.2723-2728

2007

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Evidence of Germanium precipitation in phase-change Ge1−xTex thin films by Raman scattering

Applied physics letters, 2009-07, Vol.95 (3), p.31908

2009

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Material engineering of GexTe100−x compounds to improve phase-change memory performances

Solid-state electronics, 2013-11, Vol.89, p.93-100

2013

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Recent technologic developments on high-resolution beta imaging systems for quantitative autoradiography and double labeling applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2004-07, Vol.527 (1-2), p.41-45

2004

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Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors

Applied physics letters, 2008-01, Vol.92 (2)

2008

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Copper post-electroplating anneal: evaluation of in-line vs. furnace anneal on layer properties

Microelectronic engineering, 2003-11, Vol.70 (2), p.470-477

2003

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Experimental measurements of electron scattering parameters in Cu narrow lines

Microelectronic engineering, 2006-11, Vol.83 (11), p.2396-2401

2006

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Morphological instabilities in Mg-7.7 at % Al

Scripta materialia, 1999-11, Vol.41 (11), p.1235-1240

1999

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Conduction regime in innovative carbon nanotube via interconnect architectures

Applied physics letters, 2007-12, Vol.91 (25), p.252107-252107-3

2007

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Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties

Thin solid films, 2006-01, Vol.495 (1), p.124-129

2006

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ToF-SIMS imaging of Cl at Cu grain boundaries in interconnects for microelectronics

Applied surface science, 2008-12, Vol.255 (4), p.1564-1568

2008

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Cu grain growth in interconnects trenches – Experimental characterization of the overburden effect

Microelectronic engineering, 2008-10, Vol.85 (10), p.2133-2136

2008

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Nanoprobes with near-infrared persistent luminescence for in vivo imaging

Proceedings of the National Academy of Sciences - PNAS, 2007-05, Vol.104 (22), p.9266-9271

2007

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Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells

Microelectronic engineering, 2011-05, Vol.88 (5), p.827-832

2011

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GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion

Microelectronic engineering, 2011-05, Vol.88 (5), p.817-821

2011

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Fatigue of damascene copper lines under cyclic electrical loading

Microelectronic engineering, 2007-11, Vol.84 (11), p.2658-2662

2007

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Integration of single carbon nanofibers in standard via interconnects

Applied physics letters, 2008-06, Vol.92 (22), p.223510-223510-3

2008

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Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysis

Microelectronic engineering, 2008-10, Vol.85 (10), p.2175-2178

2008

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Innovative process flow to achieve carbon nanotube based interconnects

Physica status solidi. A, Applications and materials science, 2008-06, Vol.205 (6), p.1399-1401

2008

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Vibrational properties and stabilization mechanism of the amorphous phase of doped GeTe

Carbon-doped GeTe: A promising material for Phase-Change Memories

The effect of Ta interface on the crystallization of amorphous phase change material thin films

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation

A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

Evolution of Cu microstructure and resistivity during thermal treatment of damascene line: Influence of line width and temperature

Evidence of Germanium precipitation in phase-change Ge1−xTex thin films by Raman scattering

Material engineering of GexTe100−x compounds to improve phase-change memory performances

Recent technologic developments on high-resolution beta imaging systems for quantitative autoradiography and double labeling applications

Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors

Copper post-electroplating anneal: evaluation of in-line vs. furnace anneal on layer properties

Experimental measurements of electron scattering parameters in Cu narrow lines

Morphological instabilities in Mg-7.7 at % Al

Conduction regime in innovative carbon nanotube via interconnect architectures

Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties

ToF-SIMS imaging of Cl at Cu grain boundaries in interconnects for microelectronics

Cu grain growth in interconnects trenches – Experimental characterization of the overburden effect

Nanoprobes with near-infrared persistent luminescence for in vivo imaging

Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells

GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion

Fatigue of damascene copper lines under cyclic electrical loading

Integration of single carbon nanofibers in standard via interconnects

Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysis

Innovative process flow to achieve carbon nanotube based interconnects

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