UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 46

Sortiert nach

Effect of Al2O3 Passivation on Electrical Properties of \beta -Ga2O3 Field-Effect Transistor

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.512-516

2019

Volltextzugriff (PDF)

Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study

Journal of the Korean Physical Society, 2020, 77(4), , pp.317-322

2020

Volltextzugriff (PDF)

Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors

Nanomaterials (Basel, Switzerland), 2021-02, Vol.11 (2), p.494

2021

Volltextzugriff (PDF)

Low Subthreshold Swing Double-Gate \beta -Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics

IEEE electron device letters, 2019-08, Vol.40 (8), p.1317-1320

2019

Volltextzugriff (PDF)

Abnormal Bias-Temperature Stress and Thermal Instability of \beta -Ga2O3 Nanomembrane Field-Effect Transistor

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.1124-1128

2018

Volltextzugriff (PDF)

Low Subthreshold Swing Double-Gate $\beta$ -Ga 2 O 3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics

IEEE electron device letters, 2019-08, Vol.40 (8), p.1317-1320

2019

Volltextzugriff (PDF)

Low Subthreshold Swing Double-Gate [Formula Omitted]-Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics

IEEE electron device letters, 2019-01, Vol.40 (8), p.1317

2019

Volltextzugriff (PDF)

Surface depletion effect on negative bias stress instability of β-Ga2O3 (100) nanomembrane FETs

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB)

2019

Volltextzugriff (PDF)

Surface depletion effect on negative bias stress instability of β -Ga 2 O 3 (100) nanomembrane FETs

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBD01

2019

Volltextzugriff (PDF)

Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1011-1015

2021

Volltextzugriff (PDF)

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga 2 O 3 MOSFET

Semiconductor science and technology, 2024-01

2024

Volltextzugriff (PDF)

Polycrystalline/Amorphous HfO 2 Bilayer Structure as a Gate Dielectric for β -Ga 2 O 3 MOS Capacitors

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1011-1015

2021

Volltextzugriff (PDF)

Ultrahigh Deep-Ultraviolet Responsivity of a β‑Ga2O3/MgO Heterostructure-Based Phototransistor

ACS photonics, 2021-02, Vol.8 (2), p.557-566

2021

Volltextzugriff (PDF)

All polymer encapsulated, highly-sensitive MoS2 phototransistors on flexible PAR substrate

Applied physics letters, 2018-07, Vol.113 (1)

2018

Volltextzugriff (PDF)

Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study

Journal of the Korean Physical Society, 2020-08, p.317-322

2020

Volltextzugriff (PDF)

Asymmetric Double‐Gate β‐Ga2O3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices

Advanced electronic materials, 2019-06, Vol.5 (6), p.n/a

2019

Volltextzugriff (PDF)

Abnormal Bias-Temperature Stress and Thermal Instability of $\beta$ -Ga 2 O 3 Nanomembrane Field-Effect Transistor

IEEE journal of the Electron Devices Society, 2018-09, Vol.6, p.1124-1128

2018

Volltextzugriff (PDF)

Effect of Al 2 O 3 Passivation on Electrical Properties of $\beta$ -Ga 2 O 3 Field-Effect Transistor

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.512-516

2019

Volltextzugriff (PDF)

A comparative study of charge trapping effect in p-type MoTe 2 and WSe 2 FETs using pulsed current–voltage measurements

Japanese Journal of Applied Physics, 2021-01, Vol.60 (1), p.11003

2021

Volltextzugriff (PDF)

Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β -Ga 2 O 3 Field-Effect Transistors

Nanomaterials (Basel, Switzerland), 2021-02, Vol.11 (2)

2021

Volltextzugriff (PDF)

Effect of Al2O3 Passivation on Electrical Properties of [Formula Omitted]-Ga2O3 Field-Effect Transistor

IEEE journal of the Electron Devices Society, 2019-01, Vol.7, p.512

2019

Volltextzugriff (PDF)

A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current–voltage measurements

Japanese Journal of Applied Physics, 2021-01, Vol.60 (1)

2021

Volltextzugriff (PDF)

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga 2 O 3 /MgO Heterostructure-Based Phototransistor

ACS photonics, 2021-02, Vol.8 (2), p.557-566

2021

Volltextzugriff (PDF)

Abnormal Bias-Temperature Stress and Thermal Instability of [Formula Omitted]-Ga2O3 Nanomembrane Field-Effect Transistor

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.1124

2018

Volltextzugriff (PDF)

Asymmetric Double‐Gate β‐Ga 2 O 3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices

Advanced electronic materials, 2019-06, Vol.5 (6)

2019

Volltextzugriff (PDF)

1 – 25 von 46

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(43)
Mit Volltextzugriff
(44)

Publikationsform

Artikel
(45)
Tagungsberichte
(1)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(29)
Physical Sciences
(16)
Technology
(15)
Materials Science
(11)
Physics
(11)
Materials Science, Multidisciplinary
(10)
Physics, Applied
(10)
Life Sciences & Biomedicine
(9)
Chemistry
(8)
Field Effect Transistors
(8)
Science & Technology - Other Topics
(7)
Humans
(6)
Nanoscience & Nanotechnology
(6)
Chemistry, Physical
(5)
Engineering
(5)
Engineering, Electrical & Electronic
(5)
Gallium Oxides
(5)
Semiconductor Devices
(5)
Β-Ga
(5)
Hafnium Oxide
(4)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Effect of Al2O3 Passivation on Electrical Properties of \beta -Ga2O3 Field-Effect Transistor

Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study

Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors

Low Subthreshold Swing Double-Gate \beta -Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics

Abnormal Bias-Temperature Stress and Thermal Instability of \beta -Ga2O3 Nanomembrane Field-Effect Transistor

Low Subthreshold Swing Double-Gate $\beta$ -Ga 2 O 3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics

Low Subthreshold Swing Double-Gate [Formula Omitted]-Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics

Surface depletion effect on negative bias stress instability of β-Ga2O3 (100) nanomembrane FETs

Surface depletion effect on negative bias stress instability of β -Ga 2 O 3 (100) nanomembrane FETs

Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga 2 O 3 MOSFET

Polycrystalline/Amorphous HfO 2 Bilayer Structure as a Gate Dielectric for β -Ga 2 O 3 MOS Capacitors

Ultrahigh Deep-Ultraviolet Responsivity of a β‑Ga2O3/MgO Heterostructure-Based Phototransistor

All polymer encapsulated, highly-sensitive MoS2 phototransistors on flexible PAR substrate

Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study

Asymmetric Double‐Gate β‐Ga2O3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices

Abnormal Bias-Temperature Stress and Thermal Instability of $\beta$ -Ga 2 O 3 Nanomembrane Field-Effect Transistor

Effect of Al 2 O 3 Passivation on Electrical Properties of $\beta$ -Ga 2 O 3 Field-Effect Transistor

A comparative study of charge trapping effect in p-type MoTe 2 and WSe 2 FETs using pulsed current–voltage measurements

Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β -Ga 2 O 3 Field-Effect Transistors

Effect of Al2O3 Passivation on Electrical Properties of [Formula Omitted]-Ga2O3 Field-Effect Transistor

A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current–voltage measurements

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga 2 O 3 /MgO Heterostructure-Based Phototransistor

Abnormal Bias-Temperature Stress and Thermal Instability of [Formula Omitted]-Ga2O3 Nanomembrane Field-Effect Transistor

Asymmetric Double‐Gate β‐Ga 2 O 3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices

Suchergebnisse filtern