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Femtosecond laser processing stainless steel foil and its Fourier spectrum detection

Optoelectronics letters, 2020-11, Vol.16 (6), p.471-476

2020

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Oleanolic acid derivative alleviates cardiac fibrosis through inhibiting PTP1B activity and regulating AMPK/TGF-β/Smads pathway

European journal of pharmacology, 2023-12, Vol.960, p.176116-176116, Article 176116

2023

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Ethyl acetate extract of Caesalpinia sappan L. inhibited acute myeloid leukemia via ROS-mediated apoptosis and differentiation

Phytomedicine (Stuttgart), 2020-03, Vol.68, p.153142-153142, Article 153142

2020

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Active tuning hBN phonon polaritons and spontaneous emission rates based on VO 2 and graphene

Wuli xuebao, 2023, Vol.72 (7), p.74201

2023

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Selective conversion of furfural to cyclopentanol over cobalt catalysts in one step

Chinese chemical letters, 2017-06, Vol.28 (6), p.1153-1158

2017

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AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application

半导体学报, 2012, Vol.33 (3), p.24-27

Wang Chong He Yunlong Zheng Xuefeng Hao Yue Ma Xiaohua Zhang Jincheng

2012

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Characterization of a broad-energy germanium detector for its use in CJPL

Nuclear science and techniques, 2017, Vol.28 (1), p.42-48, Article 7

2017

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Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT

Chinese physics letters, 2014-03, Vol.31 (3), p.177-180

2014

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Trap States in Al2O3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis

中国物理快报：英文版, 2014-03 (3), p.137-139

ZHANG Peng ZHAO Sheng-Lei XUE Jun-Shuai ZHANG Kai MA Xiao-Hua ZHANG Jin-Cheng HAO Yue

2014

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Nonlinear characterization of GaN HEMT

Journal of semiconductors, 2010-11, Vol.31 (11), p.18-23

2010

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Negative Bias Temperature Instability ＂Recovery＂ under Negative Stress Voltage with Different Oxide Thicknesses

Chinese physics letters, 2011, Vol.28 (1), p.175-178

2011

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Non-recessed-gate quasi-E-mode double heterojunction AIGaN/GaN high electron mobility transistor with high breakdown voltage

中国物理B：英文版, 2014 (7), p.677-680

Mi Min-Han Zhang Kai Chen Xing Zhao Sheng-Lei Wang Chong Zhang Jin-Cheng Ma Xiao-Hua Hao Yue

2014

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Synthesis of CdSe/CdS Core/Shell Quantum Dots Luminescent Microspheres and Their Application for WLEDs

Faguang xuebao, 2017, Vol.38 (8), p.1003-1009

2017

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An improved EEHEMT model for kink effect on AIGaN/GaN HEMT

中国物理B：英文版, 2014 (8), p.452-456

Cao Meng-Yi Lu Yang Wei Jia-Xing Chen Yong-He Li Wei-Jun Zheng Jia-Xin Ma Xiao-Hua Hao Yue

2014

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Novel silicon-controlled rectifier （SCR） for digital and high-voltage ESD power supply clamp

中国科学：信息科学（英文版）, 2014 (2), p.285-290

ZHANG Peng WANG Yuan ZHANG Xing MA XiaoHua HAO Yue

2014

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Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

Chinese physics B, 2011-08, Vol.20 (8), p.394-397, Article 087307

2011

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Physically Transient Resistive Switching Memory Based on Silk Protein

Small (Weinheim an der Bergstrasse, Germany), 2016-05, Vol.12 (20), p.2715-2719

2016

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The effects of proton irradiation on the electrical properties of NbAIO/AIGaN/GaN MIS-HEMT

中国科学：物理学、力学、天文学英文版, 2012, Vol.55 (1), p.40-43

BI ZhiWei FENG Qian ZHANG JinCheng LU Ling MAO Wei GU WenPing MA XiaoHua HAO Yue

2012

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Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

Chinese physics B, 2011-10, Vol.20 (10), p.421-425

2011

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Deep reservoir computing based on self-rectifying memristor synapse for time series prediction

Applied physics letters, 2023-07, Vol.123 (4)

2023

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A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5553-5558

2021

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Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application

Small (Weinheim an der Bergstrasse, Germany), 2018-07, Vol.14 (27), p.e1800945-n/a

2018

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Physically Transient Threshold Switching Devices for Image Compression and Encryption Computing

IEEE electron device letters, 2023-09, Vol.44 (9), p.1-1

2023

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A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors

Nanoscale, 2018-11, Vol.10 (43), p.20089-20095

2018

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β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

Applied physics letters, 2021-03, Vol.118 (12)

2021

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Femtosecond laser processing stainless steel foil and its Fourier spectrum detection

Oleanolic acid derivative alleviates cardiac fibrosis through inhibiting PTP1B activity and regulating AMPK/TGF-β/Smads pathway

Ethyl acetate extract of Caesalpinia sappan L. inhibited acute myeloid leukemia via ROS-mediated apoptosis and differentiation

Active tuning hBN phonon polaritons and spontaneous emission rates based on VO 2 and graphene

Selective conversion of furfural to cyclopentanol over cobalt catalysts in one step

AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application

Characterization of a broad-energy germanium detector for its use in CJPL

Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT

Trap States in Al2O3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis

Nonlinear characterization of GaN HEMT

Negative Bias Temperature Instability ＂Recovery＂ under Negative Stress Voltage with Different Oxide Thicknesses

Non-recessed-gate quasi-E-mode double heterojunction AIGaN/GaN high electron mobility transistor with high breakdown voltage

Synthesis of CdSe/CdS Core/Shell Quantum Dots Luminescent Microspheres and Their Application for WLEDs

An improved EEHEMT model for kink effect on AIGaN/GaN HEMT

Novel silicon-controlled rectifier （SCR） for digital and high-voltage ESD power supply clamp

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

Physically Transient Resistive Switching Memory Based on Silk Protein

The effects of proton irradiation on the electrical properties of NbAIO/AIGaN/GaN MIS-HEMT

Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

Deep reservoir computing based on self-rectifying memristor synapse for time series prediction

A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN

Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application

Physically Transient Threshold Switching Devices for Image Compression and Encryption Computing

A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

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