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Electro-optical investigations of Ovonic chalcogenide memory devices

Journal of non-crystalline solids, 2006-06, Vol.352 (9-20), p.1991-1994

2006

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Charge-state transitions of muonium in germanium

Physical review. B, Condensed matter, 1999-07, Vol.60 (3), p.1734-1745

1999

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Photostructural changes in amorphous semiconductors studied by the modulated photocurrent method

Journal of physics. Condensed matter, 1999-11, Vol.11 (46), p.9105-9114

1999

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Formation of a transient disordered state under bias illumination in a-As2Se3

Journal of non-crystalline solids, 2002-04, Vol.299-302, p.940-944

2002

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The defect states in sputtered GeSeBi films

Journal of non-crystalline solids, 1996-06, Vol.201 (1), p.119-127

1996

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Raman scattering in sputtered amorphous Ge25Se75-xBix films

Journal of non-crystalline solids, 1996-03, Vol.195 (3), p.279-285

1996

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Trapping and recombination processes in amorphous semiconductors studied by the optical bias dependence of the modulated photoconductivity

Journal of non-crystalline solids, 1993-12, Vol.164, p.623-626

1993

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The kinetics of the reversible light-induced phenomena of sputtered amorphous As2Se3

Philosophical magazine letters, 1995-08, Vol.72 (2), p.117-122

1995

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Influence of plasma conditions on the defect formation mechanism in amorphous hydrogenated silicon

Journal of applied physics, 1994-02, Vol.75 (3), p.1599-1606

1994

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Formation of a transient disordered state under bias illumination in a-As 2Se 3

Journal of non-crystalline solids, 2002, Vol.299, p.940-944

2002

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Muon studies on polycrystalline and hydrogenated amorphous germanium

Journal of non-crystalline solids, 1998-01, Vol.227, p.1079-1082

1998

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A muon investigation of hydrogen centres in chalcogenide glasses

Journal of non-crystalline solids, 1998-01, Vol.227, p.775-778

1998

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GAP-State distribution in Ge25Se75-xBix sputtered films by phase shift analysis of modulated photocurrents

Journal of non-crystalline solids, 1991, Vol.137-138, p.955-958

1991

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MuSR simulation of hydrogen centres in amorphous semiconductors — the case of germanium selenide glass

Journal of non-crystalline solids, 1996-05, Vol.198, p.692-695

1996

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Late onset of long-lasting fever as a sole complication of treatment with anti-TNFalpha

Clinical and experimental rheumatology, 2005-01, Vol.23 (1), p.122

2005

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Photoluminescence in Ge25Se75-xBix sputtered films

Solid state communications, 1992-11, Vol.84 (6), p.617-619

1992

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A study of n-type conduction in amorphous chalcogenide sputtered films

Journal of physics. Condensed matter, 1989-07, Vol.1 (28), p.4687-4695

1989

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Formation of a transient disordered state under bias illumination in a-As2Se3

Journal of non-crystalline solids, 2002, Vol.299302, p.940-944

2002

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The kinetics of the reversible light-induced phenomena of sputtered amorphous As 2 Se 3

Philosophical magazine letters, 1995-08, Vol.72 (2), p.117-122

1995

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Raman scattering in sputtered amorphous Ge 25Se 75- xBi x films

Journal of non-crystalline solids, 1996, Vol.195 (3), p.279-285

1996

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Chemical modification of the properties of amorphous arsenic

Journal of non-crystalline solids, 1980, Vol.35, p.883-888

1980

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On the absence of photodarkening in pnictide amorphous semiconductors

Solid state communications, 1980-01, Vol.35 (6), p.497-499

1980

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GAP-State distribution in Ge 25Se 75-xBi x sputtered films by phase shift analysis of modulated photocurrents

Journal of non-crystalline solids, 1991, Vol.137, p.955-958

1991

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Dependence of the Hall mobility on composition in As2(S, Se, Te)3 glasses

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1978-03, Vol.37 (3), p.387-396

1978

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p-n junctions from sputtered Ge25Se75-xBix films

Journal of applied physics, 1989-07, Vol.66 (2), p.708-710

1989

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Electro-optical investigations of Ovonic chalcogenide memory devices

Charge-state transitions of muonium in germanium

Photostructural changes in amorphous semiconductors studied by the modulated photocurrent method

Formation of a transient disordered state under bias illumination in a-As2Se3

The defect states in sputtered GeSeBi films

Raman scattering in sputtered amorphous Ge25Se75-xBix films

Trapping and recombination processes in amorphous semiconductors studied by the optical bias dependence of the modulated photoconductivity

The kinetics of the reversible light-induced phenomena of sputtered amorphous As2Se3

Influence of plasma conditions on the defect formation mechanism in amorphous hydrogenated silicon

Formation of a transient disordered state under bias illumination in a-As 2Se 3

Muon studies on polycrystalline and hydrogenated amorphous germanium

A muon investigation of hydrogen centres in chalcogenide glasses

GAP-State distribution in Ge25Se75-xBix sputtered films by phase shift analysis of modulated photocurrents

MuSR simulation of hydrogen centres in amorphous semiconductors — the case of germanium selenide glass

Late onset of long-lasting fever as a sole complication of treatment with anti-TNFalpha

Photoluminescence in Ge25Se75-xBix sputtered films

A study of n-type conduction in amorphous chalcogenide sputtered films

Formation of a transient disordered state under bias illumination in a-As2Se3

The kinetics of the reversible light-induced phenomena of sputtered amorphous As 2 Se 3

Raman scattering in sputtered amorphous Ge 25Se 75- xBi x films

Chemical modification of the properties of amorphous arsenic

On the absence of photodarkening in pnictide amorphous semiconductors

GAP-State distribution in Ge 25Se 75-xBi x sputtered films by phase shift analysis of modulated photocurrents

Dependence of the Hall mobility on composition in As2(S, Se, Te)3 glasses

p-n junctions from sputtered Ge25Se75-xBix films

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