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Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

Nano letters, 2015-03, Vol.15 (3), p.1684-1690

2015

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Negative differential conductivity and carrier heating in gate-all-around Si nanowire FETs and its impact on CMOS logic circuits

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EC16-7

2014

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Test by NMR of the phase coherence of electromagnetically induced transparency

Physical review letters, 2004-07, Vol.93 (3), p.033601.1-033601.4, Article 033601

2004

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Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Journal of applied physics, 2013-07, Vol.114 (3)

2013

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Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study

Journal of applied physics, 2015-01, Vol.117 (3)

2015

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Ab initio Study of Metal Grain Orientation-Dependent Work Function and its Impact on FinFET Variability

IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2728-2733

2013

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Dielectric-environment mediated quantum screening of two-dimensional electron gas

Journal of applied physics, 2013-09, Vol.114 (11)

2013

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On the Origin of Steep I - V Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.963-971

2015

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Effect of Band-to-Band Tunneling on Junctionless Transistors

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1023-1029

2012

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Probing decoherence with electromagnetically induced transparency in superconductive quantum circuits

Physical review letters, 2004-08, Vol.93 (8), p.087003.1-087003.4, Article 087003

2004

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Electromagnetically induced transparency in superconducting quantum circuits: Effects of decoherence, tunneling, and multilevel crosstalk

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (10), Article 104516

2006

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Hybrid methodology to model random dopant fluctuations in low doped FinFETs

Journal of computational electronics, 2015-06, Vol.14 (2), p.533-536

2015

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Finite element based three dimensional Schrödinger solver for nano-scale devices

Journal of computational electronics, 2015-03, Vol.14 (1), p.163-166

2015

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Combined optical and electrical analysis of efficiency enhancement in solar cells with embedded dielectric nanoparticles

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.1897-1901

2013

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Understanding Process Impact of Hole Traps and NBTI in HKMG p-MOSFETs Using Measurements and Atomistic Simulations

IEEE electron device letters, 2013-08, Vol.34 (8), p.963-965

2013

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Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs

IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2098-2105

2010

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Dielectric properties of Si3− ξ GeξN4 and Si3−ξCξN4: A density functional study

Journal of applied physics, 2013-06, Vol.113 (23)

2013

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Trap Generation in IL and HK layers during BTI / TDDB stress in scaled HKMG N and P MOSFETs

2014 IEEE International Reliability Physics Symposium, 2014, p.GD.3.1-GD.3.11

2014

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A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs

2014 IEEE International Reliability Physics Symposium, 2014, p.6A.4.1-6A.4.12

2014

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A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T154-T155

2015

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A Tunnel FET for V Scaling Below 0.6 V With a CMOS-Comparable Performance

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1855-1863

2011

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On the Electron and Hole Tunneling in a \hbox Gate Stack With Extreme Interfacial-Layer Scaling

IEEE electron device letters, 2011-07, Vol.32 (7), p.865-867

2011

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Quantum-information processing by nuclear magnetic resonance: Experimental implementation of half-adder and subtractor operations using an oriented spin-7/2 system

Physical review. A, Atomic, molecular, and optical physics, 2002-08, Vol.66 (2), Article 022313

2002

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The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation

72nd Device Research Conference, 2014, p.163-164

2014

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Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics

2014 IEEE International Reliability Physics Symposium, 2014, p.BD.2.1-BD.2.4

2014

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Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

Negative differential conductivity and carrier heating in gate-all-around Si nanowire FETs and its impact on CMOS logic circuits

Test by NMR of the phase coherence of electromagnetically induced transparency

Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study

Ab initio Study of Metal Grain Orientation-Dependent Work Function and its Impact on FinFET Variability

Dielectric-environment mediated quantum screening of two-dimensional electron gas

On the Origin of Steep I - V Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

Effect of Band-to-Band Tunneling on Junctionless Transistors

Probing decoherence with electromagnetically induced transparency in superconductive quantum circuits

Electromagnetically induced transparency in superconducting quantum circuits: Effects of decoherence, tunneling, and multilevel crosstalk

Hybrid methodology to model random dopant fluctuations in low doped FinFETs

Finite element based three dimensional Schrödinger solver for nano-scale devices

Combined optical and electrical analysis of efficiency enhancement in solar cells with embedded dielectric nanoparticles

Understanding Process Impact of Hole Traps and NBTI in HKMG p-MOSFETs Using Measurements and Atomistic Simulations

Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs

Dielectric properties of Si3− ξ GeξN4 and Si3−ξCξN4: A density functional study

Trap Generation in IL and HK layers during BTI / TDDB stress in scaled HKMG N and P MOSFETs

A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs

A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs

A Tunnel FET for V Scaling Below 0.6 V With a CMOS-Comparable Performance

On the Electron and Hole Tunneling in a \hbox Gate Stack With Extreme Interfacial-Layer Scaling

Quantum-information processing by nuclear magnetic resonance: Experimental implementation of half-adder and subtractor operations using an oriented spin-7/2 system

The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation

Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics

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