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Formation and growth of black spots in organic light-emitting diodes

Journal of applied physics, 1996-11, Vol.80 (10), p.6002-6007

1996

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Comparative Study of CEC’2013 Problem Using Dual Population Genetic Algorithm

International journal of information engineering and electronic business, 2018-09, Vol.10 (5), p.40-45

2018

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MOVPE: is there any other technology for optoelectronics?

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.1-10

Moon, R.L.

1997

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High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine

Applied physics letters, 1988-07, Vol.53 (4), p.304-306

1988

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GaAs concentrator solar cell

Applied physics letters, 1975-04, Vol.26 (8), p.467-470

1975

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Bandgap and lattice constant of GaInAsP as a function of alloy composition

Journal of electronic materials, 1974-08, Vol.3 (3), p.635-644

1974

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The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenic

Journal of electronic materials, 1980-03, Vol.9 (2), p.299-309

1980

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Liquid phase epitaxial growth of InGaAs on InP

Journal of crystal growth, 1976-01, Vol.33 (2), p.271-280

1976

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A COMPUTER CONTROLLED MICROMALTER FOR ASSESSMENT OF THE MALTING POTENTIAL OF BARLEY CROSSBREDS

Journal of the Institute of Brewing, 1990-01, Vol.96 (1), p.11-16

1990

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Transferred electron photoemission from InP

Applied physics letters, 1974-12, Vol.25 (11), p.645-646

1974

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Growth and Characterization of GaAsSb-GaAlAsSb Lattice-Matched Heterojunctions

Journal of the Electrochemical Society, 1974, Vol.121 (3), p.416

1974

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Transient-mode liquid phase epitaxy of GaAs on InP and AlGaAs on GaP

Journal of electronic materials, 1978-03, Vol.7 (2), p.347-362

1978

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Performance of an Al0.92Ga0.08As/Al0.14Ga0.86As solar cell in concentrated sunlight

Applied physics letters, 1978-07, Vol.33 (2), p.196-198

1978

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Vaporization and Surface Phases in the Lead Zirconate-Lead Titanate System

Journal of the American Ceramic Society, 1969-10, Vol.52 (10), p.565-566

1969

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The effect of mismatch on the performance of GaAsSb photodiodes

Journal of applied physics, 1980-10, Vol.51 (10), p.5561-5564

Moon, R. L.

1980

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Fluoxetine-TCA Interaction

Journal of the American Academy of Child and Adolescent Psychiatry, 1990-11, Vol.29 (6), p.985-986

1990

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Current status of organometallic vapour phase epitaxy technology

South African journal of science, 1988-08, Vol.84 (8), p.626

Moon, R.L.

1988

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Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applications

Journal of crystal growth, 1981, Vol.55 (3), p.517-525

1981

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Perceived Competence and Self-Worth in Emotionally Disturbed Children

Journal of the American Academy of Child and Adolescent Psychiatry, 1987-09, Vol.26 (5), p.811-811

1987

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OMVPE growth of 660 nm AlGaAs double heterojunction LEDs

Journal of electronic materials, 1986, Vol.15 (1), p.13-19

1986

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The trend of deep states in organometallic vapor-phase epitaxial GaAs with varying As/Ga ratios

Applied physics letters, 1980-02, Vol.36 (4), p.304-306

1980

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Photoemission from cesium-oxide-activated InGaAsP

Applied physics letters, 1973-03, Vol.22 (6), p.270-271

1973

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The effects of the growth temperature on AlxGa1-xAs(0≤x≤0.37) LED materials grown by OM-VPE

Journal of electronic materials, 1984, Vol.13 (2), p.437-446

1984

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Comparison of theory and experiment for LPE layer thickness of GaAs and GaAs Alloys

Journal of crystal growth, 1974, Vol.21 (1), p.149-154

1974

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Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions

Journal of the Electrochemical Society, 1973, Vol.120 (11), p.1574

1973

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Formation and growth of black spots in organic light-emitting diodes

Comparative Study of CEC’2013 Problem Using Dual Population Genetic Algorithm

MOVPE: is there any other technology for optoelectronics?

High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine

GaAs concentrator solar cell

Bandgap and lattice constant of GaInAsP as a function of alloy composition

The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenic

Liquid phase epitaxial growth of InGaAs on InP

A COMPUTER CONTROLLED MICROMALTER FOR ASSESSMENT OF THE MALTING POTENTIAL OF BARLEY CROSSBREDS

Transferred electron photoemission from InP

Growth and Characterization of GaAsSb-GaAlAsSb Lattice-Matched Heterojunctions

Transient-mode liquid phase epitaxy of GaAs on InP and AlGaAs on GaP

Performance of an Al0.92Ga0.08As/Al0.14Ga0.86As solar cell in concentrated sunlight

Vaporization and Surface Phases in the Lead Zirconate-Lead Titanate System

The effect of mismatch on the performance of GaAsSb photodiodes

Fluoxetine-TCA Interaction

Current status of organometallic vapour phase epitaxy technology

Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applications

Perceived Competence and Self-Worth in Emotionally Disturbed Children

OMVPE growth of 660 nm AlGaAs double heterojunction LEDs

The trend of deep states in organometallic vapor-phase epitaxial GaAs with varying As/Ga ratios

Photoemission from cesium-oxide-activated InGaAsP

The effects of the growth temperature on AlxGa1-xAs(0≤x≤0.37) LED materials grown by OM-VPE

Comparison of theory and experiment for LPE layer thickness of GaAs and GaAs Alloys

Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions

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