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226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

Applied physics letters, 2018-07, Vol.113 (1)

2018

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(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

ECS transactions, 2018-07, Vol.86 (12), p.31-40

2018

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Design of AlGaN-based quantum structures for low threshold UVC lasers

Journal of applied physics, 2019-12, Vol.126 (22)

2019

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High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied physics letters, 2020-02, Vol.116 (8)

2020

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On the conduction mechanism in compositionally graded AlGaN

Applied physics letters, 2022-08, Vol.121 (7)

2022

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied physics letters, 2014-05, Vol.104 (20)

2014

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On the origin of the 265 nm absorption band in AlN bulk crystals

Applied physics letters, 2012-05, Vol.100 (19)

2012

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High p-conductivity in AlGaN enabled by polarization field engineering

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Journal of applied physics, 2021-07, Vol.130 (4)

2021

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Weak localization and dimensional crossover in compositionally graded AlxGa1−xN

Applied physics letters, 2021-02, Vol.118 (8)

2021

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied physics letters, 2013-10, Vol.103 (16)

2013

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High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

Materials science forum, 2018-06, Vol.924, p.923-926

2018

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P-type silicon as hole supplier for nitride-based UVC LEDs

New journal of physics, 2019-02, Vol.21 (2), p.23011

2019

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Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

AIP advances, 2019-08, Vol.9 (8), p.085128-085128-6

2019

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Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Journal of electronic materials, 2014-04, Vol.43 (4), p.838-842

2014

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Characterization of dislocation arrays in AlN single crystals grown by PVT

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1545-1547

2011

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Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

Opto-Electronic Advances, 2020-01, Vol.3 (4), p.19002501-19002506

2020

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Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Materials science forum, 2012-05, Vol.717-720, p.1287-1290

2012

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Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

Applied physics letters, 2007-04, Vol.90 (15)

2007

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Performance and reliability of state-of-the-art commercial UVC light emitting diodes

Solid-state electronics, 2023-11, Vol.209, p.108775, Article 108775

2023

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Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Applied physics express, 2012-12, Vol.5 (12), p.122101

2012

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Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Applied physics express, 2022-10, Vol.15 (10), p.101004

2022

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Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

ECS transactions, 2010, Vol.33 (13), p.43-54

2010

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(Invited) X-Ray Metrology of AlN Single Crystal Substrates

ECS transactions, 2019-07, Vol.92 (7), p.113-121

2019

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226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

Design of AlGaN-based quantum structures for low threshold UVC lasers

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

On the conduction mechanism in compositionally graded AlGaN

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

On the origin of the 265 nm absorption band in AlN bulk crystals

High p-conductivity in AlGaN enabled by polarization field engineering

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Weak localization and dimensional crossover in compositionally graded AlxGa1−xN

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

P-type silicon as hole supplier for nitride-based UVC LEDs

Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Characterization of dislocation arrays in AlN single crystals grown by PVT

Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

Performance and reliability of state-of-the-art commercial UVC light emitting diodes

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

(Invited) X-Ray Metrology of AlN Single Crystal Substrates

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