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Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

Applied physics letters, 2018-01, Vol.112 (1)

2018

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Influence of interlayer properties on the characteristics of high-k gate stacks

Solid-state electronics, 2012-09, Vol.75, p.63-68

2012

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Electron affinity of metal oxide thin films of TiO2, ZnO, and NiO and their applicability in 28.3 THz rectenna devices

Journal of applied physics, 2023-08, Vol.134 (8)

2023

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On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

Journal of applied physics, 2012-08, Vol.112 (4), p.044102

2012

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Spectroellipsometric assessment of HfO2 thin films

Thin solid films, 2006-10, Vol.515 (2), p.623-626

2006

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Impact of AlO y Interfacial Layer on Resistive Switching Performance of Flexible HfO ₓ /AlO y ReRAMs

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3787-3793

2021

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Compositional tuning of atomic layer deposited MgZnO for thin film transistors

Applied physics letters, 2014-11, Vol.105 (20)

2014

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Substitutional C effect on generation lifetime in MBE-grown SiGeC layers

Semiconductor science and technology, 2009-02, Vol.24 (2), p.025009-025009 (8)

2009

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Band alignments of sputtered dielectrics on GaN

Journal of physics. D, Applied physics, 2020-02, Vol.53 (7), p.75303

2020

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Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Atomic layer deposition of Nb-doped ZnO for thin film transistors

Applied physics letters, 2016-11, Vol.109 (22)

2016

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Estimate of dielectric density using spectroscopic ellipsometry

Microelectronic engineering, 2009-07, Vol.86 (7), p.1905-1907

2009

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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

Microelectronic engineering, 2009-07, Vol.86 (7), p.1642-1645

2009

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Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements

Microelectronic engineering, 2019-09, Vol.217, p.111113, Article 111113

2019

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An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

2021 International Conference on IC Design and Technology (ICICDT), 2021, p.1-4

2021

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Non-parabolicity and band gap re-normalisation in Si doped ZnO

Journal of applied physics, 2014-02, Vol.115 (6)

2014

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Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N

Physical review. B, 2017-03, Vol.95 (11), p.115201

2017

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Water-induced Combustion-processed Metal-oxide Synaptic Transistor

2021 International Conference on IC Design and Technology (ICICDT), 2021, p.1-4

2021

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Atomic-layer deposited thulium oxide as a passivation layer on germanium

Journal of applied physics, 2015-06, Vol.117 (21)

2015

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Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3

Thin solid films, 2012-09, Vol.520 (23), p.6959-6962

2012

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Ellipsometric analysis of mixed metal oxides thin films

Thin solid films, 2008-11, Vol.517 (1), p.453-455

2008

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Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition

Microelectronic engineering, 2013-09, Vol.109, p.126-128

2013

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GSMBE growth and structural characterisation of SiGeC layers for HBT

Journal of crystal growth, 2005-05, Vol.278 (1), p.505-511

2005

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Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements

Microelectronic engineering, 2017-06, Vol.178, p.213-216

2017

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Interface engineering of Ge using thulium oxide: Band line-up study

Microelectronic engineering, 2013-09, Vol.109, p.204-207

2013

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Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

Influence of interlayer properties on the characteristics of high-k gate stacks

Electron affinity of metal oxide thin films of TiO2, ZnO, and NiO and their applicability in 28.3 THz rectenna devices

On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

Spectroellipsometric assessment of HfO2 thin films

Impact of AlO y Interfacial Layer on Resistive Switching Performance of Flexible HfO ₓ /AlO y ReRAMs

Compositional tuning of atomic layer deposited MgZnO for thin film transistors

Substitutional C effect on generation lifetime in MBE-grown SiGeC layers

Band alignments of sputtered dielectrics on GaN

Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature

Atomic layer deposition of Nb-doped ZnO for thin film transistors

Estimate of dielectric density using spectroscopic ellipsometry

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements

An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

Non-parabolicity and band gap re-normalisation in Si doped ZnO

Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N

Water-induced Combustion-processed Metal-oxide Synaptic Transistor

Atomic-layer deposited thulium oxide as a passivation layer on germanium

Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3

Ellipsometric analysis of mixed metal oxides thin films

Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition

GSMBE growth and structural characterisation of SiGeC layers for HBT

Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements

Interface engineering of Ge using thulium oxide: Band line-up study

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