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Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well

Physical review. B, Condensed matter and materials physics, 2014-03, Vol.89 (12), Article 125401

2014

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Fractional Quantum Hall States in a Ge Quantum Well

Physical review letters, 2016-04, Vol.116 (17), p.176802-176802, Article 176802

2016

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Ultra high hole mobilities in a pure strained Ge quantum well

Thin solid films, 2014-04, Vol.557, p.329-333

2014

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Current level of oil hydrocarbons in Russian coastal waters of the Black Sea and and Azov Sea

Ûg Rossii: èkologiâ, razvitie, 2020-10, Vol.15 (3), p.77-85

2020

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Distinctive Features of the Biology of Black Scorpionfish Scorpaena porcus Linnaeus from Marine Waters along the Coast of Southeast and Southwest Crimea

Contemporary problems of ecology, 2024, Vol.17 (3), p.433-444

2024

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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Semiconductor science and technology, 2004-10, Vol.19 (10), p.L106-L109

2004

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An origin behind Rashba spin splitting within inverted doped sGe heterostructures

Applied physics letters, 2017-01, Vol.110 (4)

2017

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Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

Applied physics letters, 2003-03, Vol.82 (9), p.1425-1427

2003

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Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p -type modulation-doped heterostructures

Applied physics letters, 2002-04, Vol.80 (17), p.3117-3119

2002

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A new method of investigating the quantum channel surface

Journal of physics. Condensed matter, 2008-06, Vol.20 (22), p.224024-224024 (4)

2008

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Temperature dependence of transport properties of high mobility holes in Ge quantum wells

Journal of applied physics, 2005-04, Vol.97 (8), p.083701-083701-6

2005

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Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Anisotropic size quantization and semimetal–semiconductor phase transition in bismuth-like cylindrical nanowires

Semiconductor science and technology, 2004-01, Vol.19 (1), p.106-112

2004

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Acoustoelectric effects in very high-mobility p -SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T

Physica. B, Condensed matter, 2004-04, Vol.346-347, p.548-552

2004

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XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.123-126

2005

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Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

Applied physics letters, 2004-01, Vol.84 (4), p.610-612

2004

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AC transport in p-Ge/GeSi quantum well in high magnetic fields

AIP Conference Proceedings, 2014, Vol.1610 (1), p.58

2014

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Microminiature Hall Probes for Applications at Pulsed Magnetic Fields up to 87 Tesla

Journal of low temperature physics, 2010-04, Vol.159 (1-2), p.315-318

2010

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New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology

Physica status solidi. C, 2014-01, Vol.11 (1), p.61-64

2014

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Quantum Hall Ferromagnetic-Paramagnetic Transition in p-Si/SiGe/Si Quantum Wells in a Tilted Magnetic Field

Journal of physics. Conference series, 2012-01, Vol.400 (4), p.42005-4

2012

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Mobility spectrum computational analysis using a maximum entropy approach

Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 2002-09, Vol.66 (3 Pt 2B), p.036705-036705, Article 036705

2002

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The phonon-drag thermopower in Si:B and Si:Sb δ-doped samples

Semiconductor science and technology, 2000-06, Vol.15 (6), p.551-556

2000

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Study of overheating effects in SiGe-based p-type heterostructures: Methods of the hole temperature determination

Materialwissenschaft und Werkstofftechnik, 2011-01, Vol.42 (1), p.15-18

2011

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Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures

Journal of low temperature physics, 2010-04, Vol.159 (1-2), p.216-221

2010

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1 – 25 von 1.061

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Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well

Fractional Quantum Hall States in a Ge Quantum Well

Ultra high hole mobilities in a pure strained Ge quantum well

Current level of oil hydrocarbons in Russian coastal waters of the Black Sea and and Azov Sea

Distinctive Features of the Biology of Black Scorpionfish Scorpaena porcus Linnaeus from Marine Waters along the Coast of Southeast and Southwest Crimea

High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

An origin behind Rashba spin splitting within inverted doped sGe heterostructures

Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p -type modulation-doped heterostructures

A new method of investigating the quantum channel surface

Temperature dependence of transport properties of high mobility holes in Ge quantum wells

Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well

Anisotropic size quantization and semimetal–semiconductor phase transition in bismuth-like cylindrical nanowires

Acoustoelectric effects in very high-mobility p -SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields

Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T

XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

AC transport in p-Ge/GeSi quantum well in high magnetic fields

Microminiature Hall Probes for Applications at Pulsed Magnetic Fields up to 87 Tesla

New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology

Quantum Hall Ferromagnetic-Paramagnetic Transition in p-Si/SiGe/Si Quantum Wells in a Tilted Magnetic Field

Mobility spectrum computational analysis using a maximum entropy approach

The phonon-drag thermopower in Si:B and Si:Sb δ-doped samples

Study of overheating effects in SiGe-based p-type heterostructures: Methods of the hole temperature determination

Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures

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