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Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 2002-09, Vol.66 (3 Pt 2B), p.036705-036705, Article 036705

2002

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The phonon-drag thermopower in Si:B and Si:Sb δ-doped samples

Semiconductor science and technology, 2000-06, Vol.15 (6), p.551-556

2000

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Study of overheating effects in SiGe-based p-type heterostructures: Methods of the hole temperature determination

Materialwissenschaft und Werkstofftechnik, 2011-01, Vol.42 (1), p.15-18

2011

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Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures

Journal of low temperature physics, 2010-04, Vol.159 (1-2), p.216-221

2010

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Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well

Fractional Quantum Hall States in a Ge Quantum Well

Ultra high hole mobilities in a pure strained Ge quantum well

Current level of oil hydrocarbons in Russian coastal waters of the Black Sea and and Azov Sea

Temperature dependence of transport properties of high mobility holes in Ge quantum wells

High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

An origin behind Rashba spin splitting within inverted doped sGe heterostructures

Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p -type modulation-doped heterostructures

A new method of investigating the quantum channel surface

Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well

Anisotropic size quantization and semimetal–semiconductor phase transition in bismuth-like cylindrical nanowires

Acoustoelectric effects in very high-mobility p -SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields

Ultrahigh room-temperature hole mobility in a SiGe quantum well

Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T

XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

Microminiature Hall Probes for Applications at Pulsed Magnetic Fields up to 87 Tesla

Acoustoelectric effects in very high-mobility p -SiGe / Ge / SiGe heterostructure

New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology

Quantum Hall Ferromagnetic-Paramagnetic Transition in p-Si/SiGe/Si Quantum Wells in a Tilted Magnetic Field

Mobility spectrum computational analysis using a maximum entropy approach

The phonon-drag thermopower in Si:B and Si:Sb δ-doped samples

Study of overheating effects in SiGe-based p-type heterostructures: Methods of the hole temperature determination

Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures

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