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Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

Nano letters, 2015-10, Vol.15 (10), p.6770-6776

2015

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Indium segregation in AlInN/AlN/GaN heterostructures

Applied physics letters, 2010-09, Vol.97 (13), p.132114-132114-3

2010

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Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Applied physics letters, 2016-11, Vol.109 (22)

2016

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Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

Semiconductor science and technology, 2020-02, Vol.36 (2), p.24002

2020

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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Interface dislocations in InxGa1–xN/GaN heterostructures

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.n/a

2017

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The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.269-275

2017

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Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures

Nanotechnology, 2012-03, Vol.23 (11), p.115701-1-6

2012

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Structural and local electrical properties of AlInN/AlN/GaN heterostructures

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2838-2840

2012

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Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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Probing the Evolution of Electrically Active Defects in Doped Ferroelectric HfO2 during Wake-Up and Fatigue

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

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Dairy Processing: Advanced Research to Applications

1st ed. 2020., 2020

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Immunohistochemical identification of interstitial cells of cajal (ICCs) in prenatal bovine intestine

Indian journal of animal sciences, 2014-08, Vol.84 (8)

2014

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Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods

Journal of physics. Conference series, 2011-11, Vol.326 (1), p.012011

2011

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Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells

Applied physics letters, 2021-01, Vol.118 (3)

2021

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Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS 2 monolayers on sapphire substrates

Solid-state electronics, 2023-11, Vol.209, p.108781, Article 108781

2023

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Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

Applied surface science, 2020-06, Vol.515, p.146016, Article 146016

2020

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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Applied surface science, 2020-02, Vol.502, p.144086, Article 144086

2020

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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Applied surface science, 2020-02, Vol.502

2020

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Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substrates

Solid-state electronics, 2023-11, Vol.209, Article 108781

2023

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Cross-sectional SEM-EBIC analysis of semi-vertical GaN power diodes

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2022, p.1-6

2022

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Patterns of calcium channel (TRPV6) expression in rabbit gut epithelium

World rabbit science, 2021, Vol.28 (4), p.187-197

2021

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Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures

Applied physics letters, 2011-07, Vol.99 (1)

2011

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Interface dislocations in In x Ga 1- x N/GaN heterostructures: Interface dislocations in In x Ga 1- x N/GaN

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600442

2017

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Interface dislocations in In sub(x)Ga sub(1-x)N/GaN heterostructures

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-np

2017

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Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

Indium segregation in AlInN/AlN/GaN heterostructures

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Interface dislocations in InxGa1–xN/GaN heterostructures

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures

Structural and local electrical properties of AlInN/AlN/GaN heterostructures

Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy

Probing the Evolution of Electrically Active Defects in Doped Ferroelectric HfO2 during Wake-Up and Fatigue

Dairy Processing: Advanced Research to Applications

Immunohistochemical identification of interstitial cells of cajal (ICCs) in prenatal bovine intestine

Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods

Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells

Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS 2 monolayers on sapphire substrates

Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substrates

Cross-sectional SEM-EBIC analysis of semi-vertical GaN power diodes

Patterns of calcium channel (TRPV6) expression in rabbit gut epithelium

Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures

Interface dislocations in In x Ga 1- x N/GaN heterostructures: Interface dislocations in In x Ga 1- x N/GaN

Interface dislocations in In sub(x)Ga sub(1-x)N/GaN heterostructures

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