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Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals

Science (American Association for the Advancement of Science), 2012-03, Vol.335 (6074), p.1330-1334

2012

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New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Materials, 2021-09, Vol.14 (18), p.5348

2021

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Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations

Materials, 2019-09, Vol.12 (18), p.3027

2019

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The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (25), p.838-8392

2020

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Direct Measurement of Coherency Limits for Strain Relaxation in Heteroepitaxial Core/Shell Nanowires

Nano letters, 2013-05, Vol.13 (5), p.1869-1876

2013

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Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

Materials, 2019-10, Vol.12 (19), p.3223

2019

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Dislocation-Free SiGe/Si Heterostructures

Crystals (Basel), 2018-06, Vol.8 (6), p.257

2018

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Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

Crystals (Basel), 2020-02, Vol.10 (2), p.57

2020

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Perfect crystals grown from imperfect interfaces

Scientific reports, 2013-07, Vol.3 (1), p.2276-2276, Article 2276

2013

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Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001)

Physical review letters, 2004-11, Vol.93 (21), p.216102.1-216102.4, Article 216102

2004

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Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study

Applied surface science, 2020-07, Vol.517, p.146056, Article 146056

2020

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Author Correction: In-plane selective area InSb–Al nanowire quantum networks

Communications physics, 2021-03, Vol.4 (1), p.1-1, Article 63

2021

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Electronic and elastic contributions in the enhanced stability of Ge( [formula omitted]) under compressive strain

Surface science, 2004-05, Vol.556 (2), p.121-128

2004

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Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration

APL materials, 2013-11, Vol.1 (5), p.052109-052109-8

2013

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Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

Acta materialia, 2021-07, Vol.213, p.116915, Article 116915

2021

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In‐Plane Nanowire Growth of Topological Crystalline Insulator Pb 1 − x Sn x Te

Advanced functional materials, 2023-12, Vol.33 (50)

2023

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Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

physica status solidi (b), 2021-06, Vol.258 (6), p.n/a

2021

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Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition

Acta materialia, 2024-01, Vol.263, p.119465, Article 119465

2024

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Temperature-Dependent Stability of Polytypes and Stacking Faults in Si C : Reconciling Theory and Experiments

Physical review applied, 2019-08, Vol.12 (2), Article 021002

2019

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Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

physica status solidi (b), 2019-07, Vol.256 (7), p.n/a

2019

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Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate

Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-02, Vol.12 (5), p.1820-1832

2024

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Surface and volume energies of α-, β-, and κ-Ga 2 O 3 under epitaxial strain induced by a sapphire substrate

Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-02, Vol.12 (5), p.1820-1832

2024

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Surface and volume energies of -, -, and -GaO under epitaxial strain induced by a sapphire substrate

Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-02, Vol.12 (5), p.182-1832

2024

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Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate

Applied physics letters, 2002-05, Vol.80 (20), p.3736-3738

2002

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Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials

Modelling and simulation in materials science and engineering, 2020-01, Vol.28 (1), p.15002

2020

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Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations

The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Direct Measurement of Coherency Limits for Strain Relaxation in Heteroepitaxial Core/Shell Nanowires

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

Dislocation-Free SiGe/Si Heterostructures

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

Perfect crystals grown from imperfect interfaces

Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001)

Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study

Author Correction: In-plane selective area InSb–Al nanowire quantum networks

Electronic and elastic contributions in the enhanced stability of Ge( [formula omitted]) under compressive strain

Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration

Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

In‐Plane Nanowire Growth of Topological Crystalline Insulator Pb 1 − x Sn x Te

Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition

Temperature-Dependent Stability of Polytypes and Stacking Faults in Si C : Reconciling Theory and Experiments

Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate

Surface and volume energies of α-, β-, and κ-Ga 2 O 3 under epitaxial strain induced by a sapphire substrate

Surface and volume energies of -, -, and -GaO under epitaxial strain induced by a sapphire substrate

Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate

Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials

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