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Negative capacitance in optically sensitive metal-insulator-semiconductor-metal structures

Journal of applied physics, 2016-12, Vol.120 (22)

2016

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Gain mechanism in GaN Schottky ultraviolet detectors

Applied physics letters, 2001-09, Vol.79 (10), p.1417-1419

2001

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Negative differential resistance in three terminal photodetectors

Applied physics letters, 2016-06, Vol.108 (25)

2016

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Non-volatile resonance modes of a photonic cavity in diamond produced by fine-tuning

Journal of applied physics, 2016-10, Vol.120 (16), p.163107

2016

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Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

Journal of applied physics, 2015-01, Vol.117 (4)

2015

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Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

Journal of applied physics, 2015-10, Vol.118 (13)

2015

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A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

Journal of applied physics, 2014-08, Vol.116 (7)

2014

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Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures

Journal of applied physics, 2001-03, Vol.89 (5), p.2676-2685

2001

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Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy

Applied physics letters, 2001-01, Vol.78 (3), p.288-290

2001

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Non-volatile memory transistor based on Pt nanocrystals with negative differencial resistance

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Characteristics of metal-insulator-semiconductor capacitors based on high-k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation

Applied physics letters, 2004-12, Vol.85 (24), p.5950-5952

2004

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Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

Journal of applied physics, 2013-02, Vol.113 (7)

2013

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A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers

Journal of the Electrochemical Society, 2010, Vol.157 (4), p.H463

2010

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Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry

Applied physics letters, 2002-01, Vol.80 (3), p.347-349

2002

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Stranski-Krastanov growth of GaN quantum dots on AlN template by metalorganic chemical vapor deposition

Journal of applied physics, 2008-08, Vol.104 (4), p.044307-044307-6

2008

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The effect of AlN buffer layer on GaN grown on (1 1 1)-oriented Si substrates by MOCVD

Journal of crystal growth, 2000-09, Vol.218 (2), p.181-190

2000

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Lateral confined epitaxy of GaN layers on Si substrates

Journal of crystal growth, 2001-09, Vol.230 (3), p.341-345

2001

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Propagation loss in GaN-based ridge waveguides

Applied physics letters, 2004-05, Vol.84 (19), p.3801-3803

2004

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Grain-boundary-controlled transport in GaN layers

Physical review. B, Condensed matter, 2000-06, Vol.61 (23), p.15573-15576

2000

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InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

Electronics letters, 2004-09, Vol.40 (20), p.1304-1305

2004

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The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2―HfO2 stacks and Au nanocrystals

Microelectronic engineering, 2011-06, Vol.88 (6), p.964-968

2011

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Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy

Journal of crystal growth, 2002-09, Vol.243 (3), p.375-380

2002

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Characteristics of In $_x$ Al $_1-x$ N–GaN High-Electron Mobility Field-Effect Transistor

IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.146-150

2005

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Peculiarities of hole trapping in Al2O3-SiO2 gate dielectric stack

Microelectronics and reliability, 2017-12, Vol.79, p.265-269

2017

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Diamond processing by focused ion beam-surface damage and recovery

Applied physics letters, 2011-10, Vol.99 (18), p.183109-183109-3

2011

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Negative capacitance in optically sensitive metal-insulator-semiconductor-metal structures

Gain mechanism in GaN Schottky ultraviolet detectors

Negative differential resistance in three terminal photodetectors

Non-volatile resonance modes of a photonic cavity in diamond produced by fine-tuning

Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures

Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy

Non-volatile memory transistor based on Pt nanocrystals with negative differencial resistance

Characteristics of metal-insulator-semiconductor capacitors based on high-k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation

Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers

Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry

Stranski-Krastanov growth of GaN quantum dots on AlN template by metalorganic chemical vapor deposition

The effect of AlN buffer layer on GaN grown on (1 1 1)-oriented Si substrates by MOCVD

Lateral confined epitaxy of GaN layers on Si substrates

Propagation loss in GaN-based ridge waveguides

Grain-boundary-controlled transport in GaN layers

InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2―HfO2 stacks and Au nanocrystals

Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy

Characteristics of In $_x$ Al $_1-x$ N–GaN High-Electron Mobility Field-Effect Transistor

Peculiarities of hole trapping in Al2O3-SiO2 gate dielectric stack

Diamond processing by focused ion beam-surface damage and recovery

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