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Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics

Nature communications, 2020-05, Vol.11 (1), p.2314-2314, Article 2314

2020

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Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Applied physics letters, 2016-08, Vol.109 (8)

2016

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Band Alignment of ScxAl1-xN/GaN Heterojunctions

ACS applied materials & interfaces, 2020-11, Vol.12 (46), p.52192-52200

2020

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Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Applied physics letters, 2020-03, Vol.116 (11)

2020

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Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta2N Thin Films

ACS applied materials & interfaces, 2021-03, Vol.13 (10), p.12575-12580

2021

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Passive High Power RF Comb Filters Using Epitaxial GaN/NbN/SiC HBARs

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2021-11, Vol.68 (11), p.3406-3414

2021

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X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors

IEEE electron device letters, 2018-12, Vol.39 (12), p.1884-1887

2018

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Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates

IEEE transactions on semiconductor manufacturing, 2016-11, Vol.29 (4), p.384-389

2016

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Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

IEEE transactions on semiconductor manufacturing, 2017-11, Vol.30 (4), p.475-479

2017

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Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

Applied physics letters, 2014-09, Vol.105 (9)

2014

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Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Applied physics letters, 2016-08, Vol.109 (6)

2016

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Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures

Energies (Basel), 2021-10, Vol.14 (20), p.6654

2021

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Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High- k Dielectrics

Applied physics express, 2011-05, Vol.4 (5), p.55802

2011

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431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

Applied physics letters, 2018-01, Vol.112 (3)

2018

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Improving NASA’s Earth Satellite and Model Data Discoverability for Interdisciplinary Research, Applications, and Education

Data science journal, 2023-04, Vol.22, p.9-9

2023

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Serum Amyloid A Protein Binds to Outer Membrane Protein A of Gram-negative Bacteria

The Journal of biological chemistry, 2005-05, Vol.280 (19), p.18562-18567

2005

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Developing Metrics for NASA Earth Science Interdisciplinary Data Products and Services

Data science journal, 2022-02, Vol.21 (1)

2022

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Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

Applied physics letters, 2017-04, Vol.110 (16)

2017

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GaN/NbN epitaxial semiconductor/superconductor heterostructures

Nature (London), 2018-03, Vol.555 (7695), p.183-189

2018

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Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

AIP advances, 2020-05, Vol.10 (5), p.055307-055307-7

2020

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Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition

Chemistry of materials, 2020-02, Vol.32 (3), p.1140-1152

2020

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Temperature evolution of frequency and anharmonic phonon loss for multi-mode epitaxial HBARs

Applied physics letters, 2020-09, Vol.117 (12)

2020

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Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy

Applied physics letters, 2022-07, Vol.121 (4)

2022

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Dynamic Mode Suppression and Frequency Tuning in S-Band GaN/YIG Magnetoelastic HBARs

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2023-08, Vol.70 (8), p.876-884

2023

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Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Band Alignment of ScxAl1-xN/GaN Heterojunctions

Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta2N Thin Films

Passive High Power RF Comb Filters Using Epitaxial GaN/NbN/SiC HBARs

X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates

Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures

Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High- k Dielectrics

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

Improving NASA’s Earth Satellite and Model Data Discoverability for Interdisciplinary Research, Applications, and Education

Serum Amyloid A Protein Binds to Outer Membrane Protein A of Gram-negative Bacteria

Developing Metrics for NASA Earth Science Interdisciplinary Data Products and Services

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition

Temperature evolution of frequency and anharmonic phonon loss for multi-mode epitaxial HBARs

Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy

Dynamic Mode Suppression and Frequency Tuning in S-Band GaN/YIG Magnetoelastic HBARs

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