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Silicon Substrate Engineered High-Voltage High-Temperature GaN-DHFETs

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2217-2223

2013

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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

IEEE electron device letters, 2010-08, Vol.31 (8), p.851-853

2010

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Capacitive Power Management Circuit for Micropower Thermoelectric Generators With a 1.4 μA Controller

IEEE journal of solid-state circuits, 2009-10, Vol.44 (10), p.2824-2833

2009

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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-μm Buffer Thickness by Local Substrate Removal

IEEE electron device letters, 2011, Vol.32 (1), p.30-32

2011

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Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing

Journal of applied physics, 2010-10, Vol.108 (7), p.074902-074902-7

2010

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Improved Surface Cleaning by In Situ Hydrogen Plasma for Amorphous/Crystalline Silicon Heterojunction Solar Cells

Solid state phenomena, 2013-01, Vol.195, p.321-323

2013

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Accurate modeling of high-Q spiral inductors in thin-film multilayer technology for wireless telecommunication applications

IEEE transactions on microwave theory and techniques, 2001-04, Vol.49 (4), p.589-599

2001

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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- \mu\hbox Buffer Thickness by Local Substrate Removal

IEEE electron device letters, 2011-01, Vol.32 (1), p.30-32

2011

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Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3

Solid state phenomena, 2012-01, Vol.187, p.357-361

2012

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Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2216-2218

2011

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Low-cost industrial technologies of crystalline silicon solar cells

Proceedings of the IEEE, 1997-05, Vol.85 (5), p.711-730

1997

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An 8-Bit Flash Analog-to-Digital Converter in Standard CMOS Technology Functional From 4.2 K to 300 K

IEEE journal of solid-state circuits, 2009-07, Vol.44 (7), p.2019-2025

2009

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Two-In-One Texturing and Polishing in One Solution

Solid state phenomena, 2012, Vol.187, p.353-356

2012

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An 8-Bit Flash Analog-to-Digital Converter in Standard CMOS Technology Functional From 4.2 K to 300 K: Special Issue on the 34TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC)

IEEE journal of solid-state circuits, 2009, Vol.44 (7), p.2019-2025

2009

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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-[Formula Omitted] Buffer Thickness by Local Substrate Removal

IEEE electron device letters, 2011-01, Vol.32 (1), p.30

2011

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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- mu hbox m Buffer Thickness by Local Substrate Removal

IEEE electron device letters, 2011-01, Vol.32 (1), p.30-32

2011

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Capacitive Power-Management Circuit for Micropower Thermoelectric Generators with a 2.1μW Controller

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2008, p.300-615

2008

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Full-wave analysis of multiconductor multislot planar guiding structures in layered media

IEEE transactions on microwave theory and techniques, 2003-03, Vol.51 (3), p.874-886

2003

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Multimodal characterization of planar microwave structures

IEEE transactions on microwave theory and techniques, 2004-01, Vol.52 (1), p.175-182

2004

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Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers

Solid state phenomena, 2009-10, Vol.156-158, p.357-362

2009

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Generalized analysis of coupled lines in multilayer microwave MCM-D technology-application: integrated coplanar Lange couplers

IEEE transactions on microwave theory and techniques, 1999-09, Vol.47 (9), p.1863-1872

1999

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Determination of Si-SiO2 interface recombination parameters using a gate-controlled point-junction diode under illumination

IEEE transactions on electron devices, 1988-02, Vol.35 (2), p.203-222

1988

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A Modified Electromigration Test Structure for Flip Chip Interconnections

IEEE transactions on components and packaging technologies, 2006-09, Vol.29 (3), p.508-511

2006

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Improving low-temperature APCVD SiO 2 passivation by rapid thermal annealing for Si devices

IEEE electron device letters, 1998-12, Vol.19 (12), p.505-507

1998

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IS IT POSSIBLE TO MODEL QUALITY OF LIFE?

The Quality of Life: Systems Approaches, 1981, p.98-104

MERTENS, Robert P.

1981

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Silicon Substrate Engineered High-Voltage High-Temperature GaN-DHFETs

Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

Capacitive Power Management Circuit for Micropower Thermoelectric Generators With a 1.4 μA Controller

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-μm Buffer Thickness by Local Substrate Removal

Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing

Improved Surface Cleaning by In Situ Hydrogen Plasma for Amorphous/Crystalline Silicon Heterojunction Solar Cells

Accurate modeling of high-Q spiral inductors in thin-film multilayer technology for wireless telecommunication applications

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- \mu\hbox Buffer Thickness by Local Substrate Removal

Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3

Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal

Low-cost industrial technologies of crystalline silicon solar cells

An 8-Bit Flash Analog-to-Digital Converter in Standard CMOS Technology Functional From 4.2 K to 300 K

Two-In-One Texturing and Polishing in One Solution

An 8-Bit Flash Analog-to-Digital Converter in Standard CMOS Technology Functional From 4.2 K to 300 K: Special Issue on the 34TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC)

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-[Formula Omitted] Buffer Thickness by Local Substrate Removal

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- mu hbox m Buffer Thickness by Local Substrate Removal

Capacitive Power-Management Circuit for Micropower Thermoelectric Generators with a 2.1μW Controller

Full-wave analysis of multiconductor multislot planar guiding structures in layered media

Multimodal characterization of planar microwave structures

Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers

Generalized analysis of coupled lines in multilayer microwave MCM-D technology-application: integrated coplanar Lange couplers

Determination of Si-SiO2 interface recombination parameters using a gate-controlled point-junction diode under illumination

A Modified Electromigration Test Structure for Flip Chip Interconnections

Improving low-temperature APCVD SiO 2 passivation by rapid thermal annealing for Si devices

IS IT POSSIBLE TO MODEL QUALITY OF LIFE?

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