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Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

Applied physics letters, 1999-11, Vol.75 (20), p.3138-3140

1999

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COMPARISON OF LONG-TERM RESULTS OF FEMORAL VEIN LIGATION AND TRANSCATHETER THROMBOLYSIS IN THROMBOSIS OF THE FEMORAL SEGMENT

Vestnik hirurgii im. I.I. Grekova, 2019-12, Vol.178 (5), p.62-68

2019

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Sorption-Catalytic Determination of Rutin, Lysine, and Collagen in Pharmaceuticals and Cosmetics

Pharmaceutical chemistry journal, 2015-02, Vol.48 (11), p.753-758

2015

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Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN

Physica status solidi. A, Applied research, 1999-01, Vol.171 (1), p.325-339

1999

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ОСОБЛИВОСТІ УПРАВЛІННЯ ЕРГАТИЧНОЮ ТЕЛЕКОМУНІКАЦІЙНОЮ СИСТЕМОЮ СПЕЦІАЛЬНОГО ПРИЗНАЧЕННЯ

Системи управління, навігації та зв’язку. Збірник наукових праць, 2018-04, Vol.2 (48), p.14-19

2018

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Comparison of Long-Term Outcomes of Regional Catheter Thrombolysis and Standard Conservative Treatment for Proximal Deep Vein Thrombosis of Lower Extremities

Flebologiia, 2020, Vol.14 (1), p.10

2020

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High breakdown M–I–M structures on bulk AlN

Solid-state electronics, 2002-04, Vol.46 (4), p.573-576

2002

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Characterization of Thin GaN Layers Deposited by Hydride Vapour Phase Epitaxy (HVPE) on 6H- SiC Substrates

MRS proceedings, 2000, Vol.622, Article T5.7.1

2000

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GaN/SiC Quasi-Substrates for GaN-Based LEDs

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.99-102

1999

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Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy

Semiconductors (Woodbury, N.Y.), 1999-10, Vol.33 (10), p.1067-1071

1999

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Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.453-458

1999

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Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy

Semiconductor science and technology, 1997-07, Vol.12 (7), p.917-920

1997

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GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy

MRS proceedings, 1997, Vol.482, Article 251

1997

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The Severity of Manifestations of the Post-Thrombotic Syndrome Following Different Variants of Conservative Treatment of Deep Vein Thrombosis in the Lower Extremities

Flebologiia, 2018, Vol.12 (3), p.118

2018

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Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

Surface science, 1999-02, Vol.421 (3), p.377-385

1999

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Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy

Diamond and related materials, 1997-08, Vol.6 (10), p.1532-1535

1997

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Electrical characteristics of GaN/6H-SiC n-p heterojunctions

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.74-78

1997

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GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

Materials science forum, 2002-04, Vol.389-393, p.1473-1476

2002

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Residual strains in GaN grown on 6H-SiC

Diamond and related materials, 1997-08, Vol.6 (10), p.1524-1527

1997

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The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates

Journal of crystal growth, 1999-02, Vol.197 (1), p.12-18

1999

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Some new fundamental properties of GaN single-crystal films on SiC and sapphire substrates

Il nuovo cimento della Società italiana di fisica. Sezione D, 1995-11, Vol.17 (11-12), p.1509-1512

1995

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Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

Surface science, 1999, Vol.421 (3), p.377-385

1999

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The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates

Journal of crystal growth, 1999, Vol.197 (1-2), p.12-18

1999

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Physical Properties of Bulk GaN Crystals Grown by HVPE

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e39

1997

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AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

MRS proceedings, 1997, Vol.482, Article 245

1997

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Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

COMPARISON OF LONG-TERM RESULTS OF FEMORAL VEIN LIGATION AND TRANSCATHETER THROMBOLYSIS IN THROMBOSIS OF THE FEMORAL SEGMENT

Sorption-Catalytic Determination of Rutin, Lysine, and Collagen in Pharmaceuticals and Cosmetics

Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN

ОСОБЛИВОСТІ УПРАВЛІННЯ ЕРГАТИЧНОЮ ТЕЛЕКОМУНІКАЦІЙНОЮ СИСТЕМОЮ СПЕЦІАЛЬНОГО ПРИЗНАЧЕННЯ

Comparison of Long-Term Outcomes of Regional Catheter Thrombolysis and Standard Conservative Treatment for Proximal Deep Vein Thrombosis of Lower Extremities

High breakdown M–I–M structures on bulk AlN

Characterization of Thin GaN Layers Deposited by Hydride Vapour Phase Epitaxy (HVPE) on 6H- SiC Substrates

GaN/SiC Quasi-Substrates for GaN-Based LEDs

Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy

Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE

Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy

GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy

The Severity of Manifestations of the Post-Thrombotic Syndrome Following Different Variants of Conservative Treatment of Deep Vein Thrombosis in the Lower Extremities

Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy

Electrical characteristics of GaN/6H-SiC n-p heterojunctions

GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

Residual strains in GaN grown on 6H-SiC

The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates

Some new fundamental properties of GaN single-crystal films on SiC and sapphire substrates

Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates

Physical Properties of Bulk GaN Crystals Grown by HVPE

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

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