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Single-wafer cluster tool performance: an analysis of the effects of redundant chambers and revisitation sequences on throughput

IEEE transactions on semiconductor manufacturing, 1996-08, Vol.9 (3), p.384-400

1996

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Silicon-carbide high-voltage (400 V) Schottky barrier diodes

IEEE electron device letters, 1992-10, Vol.13 (10), p.501-503

1992

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Single-wafer cluster tool performance: an analysis of throughput

IEEE transactions on semiconductor manufacturing, 1994-08, Vol.7 (3), p.369-373

1994

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A simple parameter extraction method for ultra-thin oxide MOSFETs

Solid-state electronics, 1995, Vol.38 (6), p.1175-1177

1995

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A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage

IEEE electron device letters, 1994-10, Vol.15 (10), p.394-395

1994

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Modeled tunnel currents for high dielectric constant dielectrics

IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1350-1355

1998

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Electrical properties of thermal oxide grown using dry oxidation on p -type 6H-silicon carbide

Applied physics letters, 1994-10, Vol.65 (17), p.2177-2178

1994

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Rapid thermal chemical vapor deposited oxides on N-type 6H-silicon carbide

IEEE electron device letters, 1995-11, Vol.16 (11), p.524-526

1995

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Characterization of Thin Silicon Oxynitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition

Journal of the Electrochemical Society, 1993-10, Vol.140 (10), p.2970-2974

1993

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Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

Solid-state electronics, 1997, Vol.41 (7), p.1051-1055

1997

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Thin oxynitride film metal-oxide-semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition

Applied physics letters, 1993-12, Vol.63 (26), p.3619-3621

1993

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Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantation

Applied physics letters, 1987-10, Vol.51 (14), p.1078-1079

1987

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Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs

IEEE transactions on electron devices, 1996-01, Vol.43 (1), p.15-22

1996

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Bulk traps in ultrathin SIMOX MOSFET's by current DLTS

IEEE electron device letters, 1988-10, Vol.9 (10), p.545-547

1988

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Deep states in silicon-on-insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy

Applied physics letters, 1988-09, Vol.53 (10), p.871-873

1988

Volltextzugriff (PDF)

DLTS analysis of carrier generation transients in thin SOI MOSFETs

IEEE transactions on electron devices, 1990-01, Vol.37 (1), p.262-266

1990

Volltextzugriff (PDF)

Optimization of SIMOX for VLSI by electrical characterization

IEEE transactions on electron devices, 1991-03, Vol.38 (3), p.463-468

1991

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Recombination in solar-grade polycrystalline silicon

Journal of applied physics, 1987-04, Vol.61 (7), p.2672-2674

1987

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Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

IEEE transactions on electron devices, 1996-05, Vol.43 (5), p.753-758

1996

Volltextzugriff (PDF)

Reactive ion etching induced damage with gas mixtures CHF3/O2 and SF6/O2

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1995-01, Vol.13 (1), p.67-72

1995

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On the presence of aluminum in thermally grown oxides on 6H-silicon carbide [power MOSFETs]

IEEE electron device letters, 1996-03, Vol.17 (3), p.136-138

1996

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Electrical properties of composite gate oxides formed by rapid thermal processing

IEEE transactions on electron devices, 1996-04, Vol.43 (4), p.636-646

1996

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the effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET's as observed using enhancement mode current DLTS

Journal of electronic materials, 1990-05, Vol.19 (5), p.449-452

1990

Volltextzugriff (PDF)

On the mobility of n -channel metal–oxide–semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition

Applied physics letters, 1995-01, Vol.66 (1), p.73-75

1995

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On the Barrier Height of Al/p-Si Schottky Diodes

Physica status solidi. A, Applied research, 1986-02, Vol.93 (2), p.K223-K226

1986

Volltextzugriff (PDF)

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Single-wafer cluster tool performance: an analysis of the effects of redundant chambers and revisitation sequences on throughput

Silicon-carbide high-voltage (400 V) Schottky barrier diodes

Single-wafer cluster tool performance: an analysis of throughput

A simple parameter extraction method for ultra-thin oxide MOSFETs

A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage

Modeled tunnel currents for high dielectric constant dielectrics

Electrical properties of thermal oxide grown using dry oxidation on p -type 6H-silicon carbide

Rapid thermal chemical vapor deposited oxides on N-type 6H-silicon carbide

Characterization of Thin Silicon Oxynitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition

Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

Thin oxynitride film metal-oxide-semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition

Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantation

Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs

Bulk traps in ultrathin SIMOX MOSFET's by current DLTS

Deep states in silicon-on-insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy

DLTS analysis of carrier generation transients in thin SOI MOSFETs

Optimization of SIMOX for VLSI by electrical characterization

Recombination in solar-grade polycrystalline silicon

Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

Reactive ion etching induced damage with gas mixtures CHF3/O2 and SF6/O2

On the presence of aluminum in thermally grown oxides on 6H-silicon carbide [power MOSFETs]

Electrical properties of composite gate oxides formed by rapid thermal processing

the effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET's as observed using enhancement mode current DLTS

On the mobility of n -channel metal–oxide–semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition

On the Barrier Height of Al/p-Si Schottky Diodes

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