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Summary of HgCdTe 2D array technology in the U.K

Journal of electronic materials, 2001-06, Vol.30 (6), p.682-689

2001

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Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

Journal of electronic materials, 2006-06, Vol.35 (6), p.1275-1282

2006

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Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Journal of electronic materials, 2003-07, Vol.32 (7), p.656-660

2003

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Design and assessment of metal-organic vapor phase epitaxy : Grown dual waveband infrared detectors

Journal of electronic materials, 2007-08, Vol.36 (8), p.931-936

2007

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HgCdTe detectors operating above 200 K

Journal of electronic materials, 2006-06, Vol.35 (6), p.1140-1144

2006

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Novel HgxCd1-xTe device structure for higher operating temperature detectors

Journal of electronic materials, 2003-07, Vol.32 (7), p.667-671

2003

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Investigations into the source of 1/f noise in HgxCd1-xTe diodes

Journal of electronic materials, 2004-06, Vol.33 (6), p.757-760

2004

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Zn concentration determination in CdZnTe by NIR spectroscopy

Journal of crystal growth, 1999-02, Vol.197 (3), p.427-434

1999

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Micromachined optical concentrators for IR negative luminescent devices

Journal of modern optics, 2002-04, Vol.49 (5-6), p.811-820

2002

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Growth of long wavelength infrared MCT emitters on conductive substrates

Journal of electronic materials, 2001-06, Vol.30 (6), p.723-728

2001

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Investigation of parameters to obtain reduced Shockley-Read traps and near radiatively limited lifetimes in MOVPE-grown MCT

Journal of materials science. Materials in electronics, 2000-10, Vol.11 (7), p.565-568

2000

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Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

Journal of electronic materials, 1999-06, Vol.28 (6), p.637-648

1999

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Hole Transport in Arsenic-Doped Hg1−xCdxTe with x ≥ 0.5

Journal of electronic materials, 2016-09, Vol.45 (9), p.4686-4691

2016

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Hole Transport in Arsenic-Doped Hg^sub 1-x^Cd^sub x^Te with x [greater than or equal to] 0.5

Journal of electronic materials, 2016-09, Vol.45 (9), p.4686

2016

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Hole Transport in Arsenic-Doped Hg1−x Cd x Te with x ≥ 0.5

Journal of electronic materials, 2016-09, Vol.45 (9), p.4686-4691

2016

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Extended defects in epitaxial cadmium mercury telluride

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.1090-1095

1996

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Doping studies in MOVPE-grown CdxHg1-xTe

Semiconductor science and technology, 1993-01, Vol.8, p.S183

1993

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A high-performance CO2 laser heterodyne detector operating at 250 K

Journal of modern optics, 1998-08, Vol.45 (8), p.1601-1611

1998

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Long-wavelength HgCdTe negative luminescent devices

Applied physics letters, 2001-08, Vol.79 (8), p.1136-1138

2001

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Use of near-infrared as a screening technique for CdZnTe substrates

Journal of materials science. Materials in electronics, 1999-11, Vol.10 (8), p.589-593

1999

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Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTe

Journal of crystal growth, 1989-10, Vol.97 (3-4), p.833-844

1989

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MOVPE growth and characterization of doped CdxHg1-xTe structures

Semiconductor science and technology, 1991-12, Vol.6, p.C26

1991

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Electron beam induced current assessment of doped and diffused junctions in epitaxial CdxHg1-xTe

Journal of crystal growth, 1994-04, Vol.138 (1-4), p.917-923

1994

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Computer controlled deposition of cmt heterostructures by Movpe

Journal of crystal growth, 1986-12, Vol.79 (1), p.935-939

1986

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Extrinsic doping at low concentrations for CDxHg1- xTe layers grown by MOVPE

Journal of crystal growth, 1990-04, Vol.101 (1), p.300-304

1990

Volltextzugriff (PDF)

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Summary of HgCdTe 2D array technology in the U.K

Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Design and assessment of metal-organic vapor phase epitaxy : Grown dual waveband infrared detectors

HgCdTe detectors operating above 200 K

Novel HgxCd1-xTe device structure for higher operating temperature detectors

Investigations into the source of 1/f noise in HgxCd1-xTe diodes

Zn concentration determination in CdZnTe by NIR spectroscopy

Micromachined optical concentrators for IR negative luminescent devices

Growth of long wavelength infrared MCT emitters on conductive substrates

Investigation of parameters to obtain reduced Shockley-Read traps and near radiatively limited lifetimes in MOVPE-grown MCT

Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

Hole Transport in Arsenic-Doped Hg1−xCdxTe with x ≥ 0.5

Hole Transport in Arsenic-Doped Hg^sub 1-x^Cd^sub x^Te with x [greater than or equal to] 0.5

Hole Transport in Arsenic-Doped Hg1−x Cd x Te with x ≥ 0.5

Extended defects in epitaxial cadmium mercury telluride

Doping studies in MOVPE-grown CdxHg1-xTe

A high-performance CO2 laser heterodyne detector operating at 250 K

Long-wavelength HgCdTe negative luminescent devices

Use of near-infrared as a screening technique for CdZnTe substrates

Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTe

MOVPE growth and characterization of doped CdxHg1-xTe structures

Electron beam induced current assessment of doped and diffused junctions in epitaxial CdxHg1-xTe

Computer controlled deposition of cmt heterostructures by Movpe

Extrinsic doping at low concentrations for CDxHg1- xTe layers grown by MOVPE

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