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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Electronics letters, 2014-01, Vol.50 (3), p.197-198

2014

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GaN vertical and lateral polarity heterostructures on GaN substrates

Journal of crystal growth, 2011-10, Vol.332 (1), p.43-47

2011

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Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy

Journal of crystal growth, 2012-07, Vol.350 (1), p.33-37

2012

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Assembly of phosphonic acids on GaN and AlGaN

Journal of physics. D, Applied physics, 2010-01, Vol.43 (1), p.015303-015303 (5)

2010

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Influence of polarity on GaN thermal stability

Journal of crystal growth, 2005-01, Vol.274 (1), p.38-46

2005

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Approach for dislocation free GaN epitaxy

Journal of crystal growth, 2010-10, Vol.312 (21), p.3143-3146

2010

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Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy

Journal of crystal growth, 2012-07, Vol.350 (1), p.27-32

2012

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Seeded growth of GaN single crystals from solution at near atmospheric pressure

Journal of crystal growth, 2008-08, Vol.310 (17), p.3934-3940

2008

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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Applied physics letters, 2013-08, Vol.103 (8), p.82110

2013

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Surface depletion effects in semiconducting nanowires

Journal of applied physics, 2008-05, Vol.103 (10), p.104313-104313-6

2008

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Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Journal of crystal growth, 2018-09, Vol.498, p.352-356

2018

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

Journal of crystal growth, 2006-01, Vol.287 (2), p.610-614

2006

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Nature of luminescence and strain in gallium nitride nanowires

Journal of crystal growth, 2009-05, Vol.311 (10), p.2982-2986

2009

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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Applied physics letters, 2005-12, Vol.87 (24)

2005

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Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates

Journal of crystal growth, 2005-01, Vol.274 (1-2), p.14-20

2005

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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Journal of electronic materials, 2010-06, Vol.39 (6), p.743-746

2010

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Correlation of threading screw dislocation density to GaN 2‐DEG mobility

Electronics letters, 2014-11, Vol.50 (23), p.1722-1724

2014

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Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps

Semiconductor science and technology, 2007-10, Vol.22 (10), p.1151-1156

2007

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Rare-earth chloride seeded growth of GaN nano- and micro-crystals

Applied surface science, 2007-05, Vol.253 (14), p.6157-6161

2007

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Journal of crystal growth, 2007-06, Vol.304 (1), p.103-107

2007

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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Applied physics letters, 2005-01, Vol.86 (2), p.021902-021902-3

2005

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Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

Scripta materialia, 2009-10, Vol.61 (8), p.773-776

2009

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Reducing saturated fat intake is associated with increased levels of LDL receptors on mononuclear cells in healthy men and women

Journal of lipid research, 1997-03, Vol.38 (3), p.459-468

1997

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Exercise and lymphocyte activation following chemotherapy for breast cancer

Medicine and science in sports and exercise, 2005-11, Vol.37 (11), p.1827-1835

2005

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Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

Applied physics letters, 2007-08, Vol.91 (9), p.094106-094106-3

2007

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

GaN vertical and lateral polarity heterostructures on GaN substrates

Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy

Assembly of phosphonic acids on GaN and AlGaN

Influence of polarity on GaN thermal stability

Approach for dislocation free GaN epitaxy

Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy

Seeded growth of GaN single crystals from solution at near atmospheric pressure

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Surface depletion effects in semiconducting nanowires

Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

Nature of luminescence and strain in gallium nitride nanowires

High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Correlation of threading screw dislocation density to GaN 2‐DEG mobility

Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

Reducing saturated fat intake is associated with increased levels of LDL receptors on mononuclear cells in healthy men and women

Exercise and lymphocyte activation following chemotherapy for breast cancer

Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

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