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The contribution of surfaces and interfaces to the crystal thermal conductivity

Surface science reports, 2014-03, Vol.69 (1), p.1-37

2014

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Thermal conductivity of silicon bulk and nanowires: Effects of isotopic composition, phonon confinement, and surface roughness

Journal of applied physics, 2010-04, Vol.107 (8), p.083503-083503-14

2010

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Experimental measurement and numerical modelling of dye washout for investigation of blood residence time in ventricular assist devices

International journal of artificial organs, 2018-04, Vol.41 (4), p.201-212

2018

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Thermal conductance of the interfaces between the III-nitride materials and their substrates: Effects of intrinsic material properties and interface conditions

Surface science reports, 2010-04, Vol.65 (4), p.111-127

2010

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Oxygen behavior in aluminum nitride

Journal of applied physics, 2005-11, Vol.98 (10), p.103529-103529-4

2005

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Elastic constants of aluminum nitride

Physica status solidi. C, 2007-01, Vol.4 (1), p.204-207

2007

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Achieving dialogue with children with severe autism in an adaptive multisensory interaction: the "MEDIATE" project

IEEE transactions on visualization and computer graphics, 2005-11, Vol.11 (6), p.734-743

2005

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Infrared analysis of the effect of Ge at the interface between 3C–SiC and Si

Diamond and related materials, 2012-02, Vol.22, p.23-28

2012

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Temperature dependence of Raman-active modes in AlN

Diamond and related materials, 2006-04, Vol.15 (4), p.1169-1174

2006

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Phonon dynamics in AlN lattice contaminated by oxygen

Diamond and related materials, 2006-10, Vol.15 (10), p.1525-1534

2006

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Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111)

Applied physics letters, 2005-07, Vol.87 (4)

2005

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Properties of surface and interface structure of AlN/3C–SiC/Ge/Si (1 1 1) heterostructure

Journal of crystal growth, 2009-12, Vol.311 (23), p.4665-4669

2009

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Validation of a Microsphere-Based Immunoassay for Detection of Anti-West Nile Virus and Anti-St. Louis Encephalitis Virus Immunoglobulin M Antibodies

Clinical and Vaccine Immunology, 2007-09, Vol.14 (9), p.1084-1093

2007

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Specific Ligand Binding Attributable to Individual Epitopes of Gonococcal Transferrin Binding Protein A

Infection and Immunity, 2002-02, Vol.70 (2), p.732-740

2002

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Silicon carbide and silicon carbide-based structures: The physics of epitaxy

Surface science reports, 2002, Vol.48 (1), p.1-51

Masri, Pierre

2002

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What causes rough surface in AlN crystal growth?

Journal of crystal growth, 2006-04, Vol.290 (1), p.44-49

2006

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Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces

Applied surface science, 2001-12, Vol.184 (1), p.79-83

2001

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Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient

Journal of crystal growth, 2004-02, Vol.262 (1), p.105-112

2004

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Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n+ Junctions

Materials science forum, 2009, Vol.600-603, p.465-468

2009

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Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites

Materials science forum, 2009, Vol.600-603, p.525-528

2009

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Gonococcal transferrin binding protein chimeras induce bactericidal and growth inhibitory antibodies in mice

Vaccine, 2007-10, Vol.25 (41), p.7247-7260

2007

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SiC Polytype Stability Influenced by Ge Impurities

Materials science forum, 2009, Vol.600-603, p.533-536

2009

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Continuity conditions at heterointerfaces and optimization conditions of buffer layers in SiC/Si

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.195-198

Masri, P.

1997

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Thermal conductance of the AlN/Si and AlN/SiC interfaces calculated with taking into account the detailed phonon spectra of the materials and the interface conditions

Physica status solidi. C, 2010-01, Vol.7 (1), p.60-63

2010

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Palmaris longus absence in six largest Indonesian ethnicities and its relationship with gender, ethnicity, and hand dominance

Medical journal of Indonesia, 2015-03, Vol.24 (1), p.24-9

2015

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The contribution of surfaces and interfaces to the crystal thermal conductivity

Thermal conductivity of silicon bulk and nanowires: Effects of isotopic composition, phonon confinement, and surface roughness

Experimental measurement and numerical modelling of dye washout for investigation of blood residence time in ventricular assist devices

Thermal conductance of the interfaces between the III-nitride materials and their substrates: Effects of intrinsic material properties and interface conditions

Oxygen behavior in aluminum nitride

Elastic constants of aluminum nitride

Achieving dialogue with children with severe autism in an adaptive multisensory interaction: the "MEDIATE" project

Infrared analysis of the effect of Ge at the interface between 3C–SiC and Si

Temperature dependence of Raman-active modes in AlN

Phonon dynamics in AlN lattice contaminated by oxygen

Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111)

Properties of surface and interface structure of AlN/3C–SiC/Ge/Si (1 1 1) heterostructure

Validation of a Microsphere-Based Immunoassay for Detection of Anti-West Nile Virus and Anti-St. Louis Encephalitis Virus Immunoglobulin M Antibodies

Specific Ligand Binding Attributable to Individual Epitopes of Gonococcal Transferrin Binding Protein A

Silicon carbide and silicon carbide-based structures: The physics of epitaxy

What causes rough surface in AlN crystal growth?

Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces

Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient

Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n+ Junctions

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites

Gonococcal transferrin binding protein chimeras induce bactericidal and growth inhibitory antibodies in mice

SiC Polytype Stability Influenced by Ge Impurities

Continuity conditions at heterointerfaces and optimization conditions of buffer layers in SiC/Si

Thermal conductance of the AlN/Si and AlN/SiC interfaces calculated with taking into account the detailed phonon spectra of the materials and the interface conditions

Palmaris longus absence in six largest Indonesian ethnicities and its relationship with gender, ethnicity, and hand dominance

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