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Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

Solar energy materials and solar cells, 2018-10, Vol.185, p.61-65

2018

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Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

Journal of physics. D, Applied physics, 2007-09, Vol.40 (17), p.5256-5265

2007

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Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Applied physics letters, 2009-01, Vol.94 (4)

2009

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Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

Applied physics letters, 2014-05, Vol.104 (21)

2014

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Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells

IEEE journal of photovoltaics, 2023-09, Vol.13 (5), p.1-7

2023

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High quality Ti-implanted Si layers above the Mott limit

Journal of applied physics, 2010-05, Vol.107 (10), p.103524-103524-5

2010

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Titanium doped silicon layers with very high concentration

Journal of applied physics, 2008-07, Vol.104 (1), p.016105-016105-3

2008

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Sub-bandgap absorption in Ti implanted Si over the Mott limit

Journal of applied physics, 2011-06, Vol.109 (11), p.113541-113541-6

2011

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Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

Journal of physics. D, Applied physics, 2016-07, Vol.49 (27), p.275103

2016

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Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

Journal of applied physics, 2012-12, Vol.112 (11)

2012

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Intermediate band mobility in heavily titanium-doped silicon layers

Solar energy materials and solar cells, 2009-09, Vol.93 (9), p.1668-1673

2009

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Two-layer Hall effect model for intermediate band Ti-implanted silicon

Journal of applied physics, 2011-03, Vol.109 (6), p.063718-063718-8

2011

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Electrical decoupling effect on intermediate band Ti-implanted silicon layers

Journal of physics. D, Applied physics, 2013-04, Vol.46 (13), p.135108-1-6

2013

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Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

Applied physics letters, 2013-07, Vol.103 (3)

2013

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Optoelectronic properties of GaP:Ti photovoltaic devices

Materials Today Sustainability, 2024-12, Vol.28, p.101008, Article 101008

2024

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A robust method to determine the contact resistance using the van der Pauw set up

Measurement : journal of the International Measurement Confederation, 2017-02, Vol.98, p.151-158

2017

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Thermal stability of intermediate band behavior in Ti implanted Si

Solar energy materials and solar cells, 2010-11, Vol.94 (11), p.1907-1911

2010

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UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

Semiconductor science and technology, 2011-11, Vol.26 (11), p.115003

2011

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Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

Journal of applied physics, 2013-08, Vol.114 (5)

2013

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Depth profile study of Ti implanted Si at very high doses

Journal of applied physics, 2011-09, Vol.110 (6), p.064501-064501-6

2011

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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

Semiconductor science and technology, 2005-10, Vol.20 (10), p.1044-1051

2005

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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

Journal of applied physics, 2010-06, Vol.107 (11), p.114104-114104-5

2010

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Limitations of high pressure sputtering for amorphous silicon deposition

Materials research express, 2016-03, Vol.3 (3), p.36401

2016

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Isotopic study of the nitrogen-related modes in N + -implanted ZnO

Applied physics letters, 2007-04, Vol.90 (18), p.181911-181911-3

2007

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Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells

High quality Ti-implanted Si layers above the Mott limit

Titanium doped silicon layers with very high concentration

Sub-bandgap absorption in Ti implanted Si over the Mott limit

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

Intermediate band mobility in heavily titanium-doped silicon layers

Two-layer Hall effect model for intermediate band Ti-implanted silicon

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

Optoelectronic properties of GaP:Ti photovoltaic devices

A robust method to determine the contact resistance using the van der Pauw set up

Thermal stability of intermediate band behavior in Ti implanted Si

UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

Depth profile study of Ti implanted Si at very high doses

A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

Limitations of high pressure sputtering for amorphous silicon deposition

Isotopic study of the nitrogen-related modes in N + -implanted ZnO

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