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Electronic structure and physical properties of early transition metal mononitrides: Density-functional theory LDA, GGA, and screened-exchange LDA FLAPW calculations

Physical review. B, Condensed matter, 2001-03, Vol.63 (15), Article 155106

2001

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Buffer-free Cu(In,Ga)Se2-solar cells by near-surface ion implantation

Solar energy materials and solar cells, 2013-09, Vol.116, p.43-48

2013

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Increased homogeneity and open-circuit voltage of Cu(In,Ga)Se2 solar cells due to higher deposition temperature

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.1028-1030

2011

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Coverage dependence of the work function of Li adsorbed on Ru( [formula omitted]): ab initio studies within DFT

Surface science, 2003-02, Vol.525 (1), p.119-125

Mannstadt, W.

2003

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Optical properties and electronic structures of semiconductors with screened-exchange LDA

Physical review. B, Condensed matter, 1999-03, Vol.59 (11), p.7486-7492

1999

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Near-interface doping by ion implantation in Cu(In,Ga)Se2 solar cells

Thin solid films, 2011-08, Vol.519 (21), p.7276-7279

2011

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Screened-exchange determination of the optical properties of large gap insulators: CaF2

Applied physics letters, 2004-05, Vol.84 (18), p.3579-3581

2004

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Parallelization of the FLAPW method

Computer physics communications, 2000-08, Vol.130 (3), p.233-243

2000

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Moss–Burstein and plasma reflection characteristics of heavily doped n -type InxGa1−xAs and InPyAs1−y

Journal of applied physics, 1999-07, Vol.86 (1), p.452-458

1999

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Influence of bulk doping type on the Li adsorption site on Si(111)- ( 1 × 1 ) : H

Physical review. B, Condensed matter and materials physics, 2004-01, Vol.69 (3), Article 035310

2004

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LDA theory of the coverage dependence of the local density of states: Li adsorbed on Ru(001)

Physical review. B, Condensed matter, 1998-05, Vol.57 (20), p.13289-13294

1998

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Increased homogeneity and open-circuit voltage of Cu(In,Ga)Se 2 solar cells due to higher deposition temperature

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.1028-1030

2011

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Electron localization in ( 7 × 7 ) reconstructed and hydrogen-covered Si(111) surfaces as seen by NMR on adsorbed Li

Physical review. B, Condensed matter, 2002-05, Vol.65 (19), Article 195319

2002

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Buffer-free Cu(In,Ga)Se sub(2)-solar cells by near-surface ion implantation

Solar energy materials and solar cells, 2013-09, Vol.116, p.43-48

2013

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Computational band-structure engineering of III–V semiconductor alloys

Applied physics letters, 2001-07, Vol.79 (3), p.368-370

2001

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Coverage dependent local density of states at Li atoms adsorbed on a Ru( [formula omitted]) surface

Surface science, 2001-12, Vol.494 (3), p.281-288

2001

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Near-interface doping by ion implantation in Cu(In,Ga)Se 2 solar cells

Thin solid films, 2011-08, Vol.519 (21), p.7276-7279

2011

Volltextzugriff (PDF)

Increased homogeneity and open-circuit voltage of Cu(In,Ga)Se sub(2) solar cells due to higher deposition temperature

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.1028-1030

2011

Volltextzugriff (PDF)

Dynamical and geometrical aspects of NO chemisorption on transition metals: Rh, Pd, and Pt

Physical review. B, Condensed matter, 1997-05, Vol.55 (19), p.13298-13303

1997

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Chemisorption of Li on jellium: Local density of states and nuclear-spin relaxation

Physical review. B, Condensed matter, 1995-08, Vol.52 (7), p.5343-5350

1995

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Multilayer-relaxed structure of the ( 1 × 2 ) Pt(110) surface

Physical review. B, Condensed matter, 1999, Vol.59 (3), p.1673-1676

1999

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Improved energy conversion efficiency in wide bandgap Cu(In, Ga)Se2 solar cells

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.000026-000031

2011

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Parallelization of the FLAPW method

Computer physics communications, 1999-12, Vol.130 (3)

1999

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Volume and composition dependence of direct and indirect band gaps in ordered ternary III-V semiconductor compounds: A screened-exchange LDA study

Physical review. B, Condensed matter, 2000-02, Vol.61 (7), p.4677-4684

2000

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Analytic Spin-Orbit Coupling Matrix Element Formulae in FLAPW Calculations

Journal of computational physics, 2001-09, Vol.172 (1), p.387-391

2001

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Electronic structure and physical properties of early transition metal mononitrides: Density-functional theory LDA, GGA, and screened-exchange LDA FLAPW calculations

Buffer-free Cu(In,Ga)Se2-solar cells by near-surface ion implantation

Increased homogeneity and open-circuit voltage of Cu(In,Ga)Se2 solar cells due to higher deposition temperature

Coverage dependence of the work function of Li adsorbed on Ru( [formula omitted]): ab initio studies within DFT

Optical properties and electronic structures of semiconductors with screened-exchange LDA

Near-interface doping by ion implantation in Cu(In,Ga)Se2 solar cells

Screened-exchange determination of the optical properties of large gap insulators: CaF2

Parallelization of the FLAPW method

Moss–Burstein and plasma reflection characteristics of heavily doped n -type InxGa1−xAs and InPyAs1−y

Influence of bulk doping type on the Li adsorption site on Si(111)- ( 1 × 1 ) : H

LDA theory of the coverage dependence of the local density of states: Li adsorbed on Ru(001)

Increased homogeneity and open-circuit voltage of Cu(In,Ga)Se 2 solar cells due to higher deposition temperature

Electron localization in ( 7 × 7 ) reconstructed and hydrogen-covered Si(111) surfaces as seen by NMR on adsorbed Li

Buffer-free Cu(In,Ga)Se sub(2)-solar cells by near-surface ion implantation

Computational band-structure engineering of III–V semiconductor alloys

Coverage dependent local density of states at Li atoms adsorbed on a Ru( [formula omitted]) surface

Near-interface doping by ion implantation in Cu(In,Ga)Se 2 solar cells

Increased homogeneity and open-circuit voltage of Cu(In,Ga)Se sub(2) solar cells due to higher deposition temperature

Dynamical and geometrical aspects of NO chemisorption on transition metals: Rh, Pd, and Pt

Chemisorption of Li on jellium: Local density of states and nuclear-spin relaxation

Multilayer-relaxed structure of the ( 1 × 2 ) Pt(110) surface

Improved energy conversion efficiency in wide bandgap Cu(In, Ga)Se2 solar cells

Parallelization of the FLAPW method

Volume and composition dependence of direct and indirect band gaps in ordered ternary III-V semiconductor compounds: A screened-exchange LDA study

Analytic Spin-Orbit Coupling Matrix Element Formulae in FLAPW Calculations

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