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Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction

Journal of applied physics, 2024-05, Vol.135 (17)

2024

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Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1520-1522

2010

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Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1450-1455

2013

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Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1491-1495

2013

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Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1366-1369

2008

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Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2184-2187

2012

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Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1375-1380

2013

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Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG)

Solid-state electronics, 2023-03, Vol.201, p.108594, Article 108594

2023

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A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures

Solid-state electronics, 2022-08, Vol.194, p.108322, Article 108322

2022

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TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

Microelectronics and reliability, 2017-09, Vol.76-77, p.350-356

2017

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Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1630-1633

2007

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Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications

Microelectronics and reliability, 2023-11, Vol.150, p.115110, Article 115110

2023

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Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests

Microelectronics and reliability, 2019-09, Vol.100-101, p.113358, Article 113358

2019

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AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1725-1730

2006

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Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1361-1368

2004

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Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-5

2023

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Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1611-1616

2005

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A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2619-2625

2012

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Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.4B.4-1-4B.4-9

2018

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Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1672-1676

2015

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Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Microelectronics and reliability, 2016-09, Vol.64, p.594-598

2016

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Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates

Microelectronics and reliability, 2003-09, Vol.43 (9), p.1713-1718

2003

Volltextzugriff (PDF)

Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.382-385

2023

Volltextzugriff (PDF)

Thermal Impedance Modeling of Si-Ge HBTs From Low-Frequency Small-Signal Measurements

IEEE electron device letters, 2011-02, Vol.32 (2), p.119-121

2011

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Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

2010 IEEE International Reliability Physics Symposium, 2010, p.139-145

2010

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Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques

Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG)

A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications

Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors

Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions

A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs

Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates

Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations

Thermal Impedance Modeling of Si-Ge HBTs From Low-Frequency Small-Signal Measurements

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

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