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Observation of intrinsic bistability in resonant tunneling diode modeling

Applied physics letters, 1989-07, Vol.55 (4), p.371-373

1989

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Time-dependent modeling of resonant-tunneling diodes from direct solution of the Schrödinger equation

Journal of applied physics, 1988-10, Vol.64 (7), p.3564-3569

1988

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Wigner function modeling of resonant tunneling diodes with high peak-to-valley ratios

Journal of applied physics, 1988-11, Vol.64 (10), p.5041-5044

1988

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An Accurate Re-formulation of the Wigner Function Method for Quantum Transport Modeling

Journal of computational physics, 1994-05, Vol.112 (1), p.149-161

1994

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A self-consistent model of Γ-X mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method

Journal of applied physics, 1993-10, Vol.74 (8), p.5053-5060

1993

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Theoretical studies of the applications of resonant tunneling diodes as intersubband laser and interband excitonic modulators

Applied physics letters, 1991-10, Vol.59 (17), p.2070-2072

1991

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Switching speeds in double-barrier resonant-tunneling diode structures

Journal of applied physics, 1991-12, Vol.70 (12), p.7638-7639

1991

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Large-signal numerical and analytical HBT models

IEEE transactions on electron devices, 1993-05, Vol.40 (5), p.837-845

1993

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Effect of spacer layer thickness on the static characteristics of resonant tunneling diodes

Applied physics letters, 1990-08, Vol.57 (9), p.899-901

1990

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Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Journal of applied physics, 1988-08, Vol.64 (3), p.1533-1540

1988

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Effect of spatially variable effective mass on static and dynamic properties of resonant tunneling devices

Applied physics letters, 1989-12, Vol.55 (25), p.2631-2633

1989

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Ultrafast pipelined adders using RTTs

Electronics letters, 1991-05, Vol.27 (10), p.830-831

1991

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High-power generation in IMPATT devices in the 100-200-GHz range

IEEE transactions on electron devices, 1991-08, Vol.38 (8), p.1701-1705

1991

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InGaAs/InP hot electron transistors grown by chemical beam epitaxy

Applied physics letters, 1992-07, Vol.61 (2), p.189-191, Article 189

1992

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Simulation of GaAs IMPATT diodes including energy and velocity transport equations

IEEE transactions on electron devices, 1983-10, Vol.30 (10), p.1327-1338

1983

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Properties and device applications of deep quantum well resonant tunneling structures

Surface science, 1990-04, Vol.228 (1), p.426-429

1990

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Dynamic Behavior of Pulsed-IMPATT Oscillators

IEEE transactions on microwave theory and techniques, 1984-02, Vol.32 (2), p.208-212

1984

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Design, fabrication and operation of a hot electron resonant tunneling transistor

Solid-state electronics, 1989-12, Vol.32 (12), p.1377-1381

1989

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Performance criteria for resonant tunneling diodes as millimeter-wave power sources

Microwave and optical technology letters, 1989-05, Vol.2 (5), p.172-175

1989

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C-V and I-V characteristics of quantum well varactors

Journal of applied physics, 1992-09, Vol.72 (6), p.2340-2346

1992

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Traveling-Wave IMPATT Amplifiers and Oscillators

IEEE transactions on microwave theory and techniques, 1986-09, Vol.34 (9), p.965-971

1986

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Comparison of theoretical and experimental results for millimeter-wave GaAs IMPATT's

IEEE transactions on electron devices, 1984-09, Vol.31 (9), p.1273-1279

1984

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Effect of Doping Profile Variation on GaAs Hybrid and Double-Read IMPATT Diode Performance at 60 and 94 GHz

IEEE transactions on microwave theory and techniques, 1984-10, Vol.32 (10), p.1342-1352

1984

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Effects of Doping Profile on GaAs, Double-Drift IMPATT Diodes at 33 and 44 GHz Using the Energy-Momentum Transport Model

IEEE transactions on microwave theory and techniques, 1984-10, Vol.32 (10), p.1353-1361

1984

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Logic design based on negative differential resistance characteristics of quantum electronic devices

IEE proceedings. G, Circuits, devices, and systems, 1993-01, Vol.140 (6), p.383

1993

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Observation of intrinsic bistability in resonant tunneling diode modeling

Time-dependent modeling of resonant-tunneling diodes from direct solution of the Schrödinger equation

Wigner function modeling of resonant tunneling diodes with high peak-to-valley ratios

An Accurate Re-formulation of the Wigner Function Method for Quantum Transport Modeling

A self-consistent model of Γ-X mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method

Theoretical studies of the applications of resonant tunneling diodes as intersubband laser and interband excitonic modulators

Switching speeds in double-barrier resonant-tunneling diode structures

Large-signal numerical and analytical HBT models

Effect of spacer layer thickness on the static characteristics of resonant tunneling diodes

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Effect of spatially variable effective mass on static and dynamic properties of resonant tunneling devices

Ultrafast pipelined adders using RTTs

High-power generation in IMPATT devices in the 100-200-GHz range

InGaAs/InP hot electron transistors grown by chemical beam epitaxy

Simulation of GaAs IMPATT diodes including energy and velocity transport equations

Properties and device applications of deep quantum well resonant tunneling structures

Dynamic Behavior of Pulsed-IMPATT Oscillators

Design, fabrication and operation of a hot electron resonant tunneling transistor

Performance criteria for resonant tunneling diodes as millimeter-wave power sources

C-V and I-V characteristics of quantum well varactors

Traveling-Wave IMPATT Amplifiers and Oscillators

Comparison of theoretical and experimental results for millimeter-wave GaAs IMPATT's

Effect of Doping Profile Variation on GaAs Hybrid and Double-Read IMPATT Diode Performance at 60 and 94 GHz

Effects of Doping Profile on GaAs, Double-Drift IMPATT Diodes at 33 and 44 GHz Using the Energy-Momentum Transport Model

Logic design based on negative differential resistance characteristics of quantum electronic devices

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