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TaOx-based resistive switching memories: prospective and challenges

Nanoscale research letters, 2013-10, Vol.8 (1), p.418-418

2013

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Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure

Applied physics letters, 2016-01, Vol.108 (1)

2016

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Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a-COx-Based Conductive Bridge Random Access Memory

ACS omega, 2020-03, Vol.5 (12), p.7032-7043

2020

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Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure

Nanoscale research letters, 2014-06, Vol.9 (1)

2014

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Conductive-bridging random access memory: challenges and opportunity for 3D architecture

Nanoscale research letters, 2015-04, Vol.10 (1), p.188-188, Article 188

2015

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Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism

Scientific reports, 2017-07, Vol.7 (1), p.1-13, Article 4735

2017

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Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

Nanoscale research letters, 2014-12, Vol.9 (1), p.692-692, Article 692

2014

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Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory

Nanoscale research letters, 2013-12, Vol.8 (1), p.527-527

2013

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Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1‐xO2 Interface and Evidence of Fatigue Mechanism

Advanced materials interfaces, 2024-08, Vol.11 (23), p.n/a

2024

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Memristive and artificial synapse performance by using TiOx/Al2O3 interface engineering in MoS2-based metallic filament memory

The Journal of physics and chemistry of solids, 2021-04, Vol.151, p.109901, Article 109901

2021

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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

Nanoscale research letters, 2012-06, Vol.7 (1), p.345-345, Article 345

2012

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Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO_x/TiO_x/TiN Structure

Nano-micro letters, 2015-10, Vol.7 (4), p.392-399

2015

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In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

Advanced electronic materials, 2020-06, Vol.6 (6), p.n/a

2020

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Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point

Jpn J Appl Phys, 2012-04, Vol.51 (4), p.04DD10-04DD10-6

2012

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Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure

Nanoscale research letters, 2014-04, Vol.9 (1), p.179-179, Article 179

2014

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Role of the Hf/Si Interfacial Layer on the High Performance of MoS2 Based Conductive Bridge RAM for Artificial Synapse Application

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

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Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction

Journal of physics. Conference series, 2022-01, Vol.2161 (1), p.12040

2022

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Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrOx/TiOx/TiN Structure

Nano-micro letters, 2015, Vol.7 (4), p.392-399

2015

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Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiOx Membrane on Vertical Silicon Nanowires in Electrolyte–Insulator–Nanowire Structure

Analytical chemistry (Washington), 2020-06, Vol.92 (12), p.8064

2020

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Role of the Hf/Si Interfacial Layer on the High Performance of MoS 2 -Based Conductive Bridge RAM for Artificial Synapse Application

IEEE electron device letters, 2020-05, Vol.41 (5), p.709-712

2020

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Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

Vacuum, 2020-06, Vol.176, p.109326, Article 109326

2020

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Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure

Jpn J Appl Phys, 2012-04, Vol.51 (4), p.04DD06-04DD06-6

2012

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Ruthenium based RRAM for low variability switching and scaling for contemporary computing systems

Microelectronics and reliability, 2022-11, Vol.138, p.114623, Article 114623

2022

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Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN

Advanced electronic materials, 2019-02, Vol.5 (2), p.n/a

2019

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Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure

Jpn J Appl Phys, 2012-04, Vol.51 (4), p.04DD17-04DD17-6

2012

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TaOx-based resistive switching memories: prospective and challenges

Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure

Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a-COx-Based Conductive Bridge Random Access Memory

Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism

Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory

Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1‐xO2 Interface and Evidence of Fatigue Mechanism

Memristive and artificial synapse performance by using TiOx/Al2O3 interface engineering in MoS2-based metallic filament memory

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO_x/TiO_x/TiN Structure

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point

Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure

Role of the Hf/Si Interfacial Layer on the High Performance of MoS2 Based Conductive Bridge RAM for Artificial Synapse Application

Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrOx/TiOx/TiN Structure

Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiOx Membrane on Vertical Silicon Nanowires in Electrolyte–Insulator–Nanowire Structure

Role of the Hf/Si Interfacial Layer on the High Performance of MoS 2 -Based Conductive Bridge RAM for Artificial Synapse Application

Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure

Ruthenium based RRAM for low variability switching and scaling for contemporary computing systems

Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN

Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure

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