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Electrical resistivity change in amorphous Ta42Si13N45 films by stress relaxation

Applied physics. A, Materials science & processing, 2015-03, Vol.118 (3), p.1153-1160

2015

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Irradiation of amorphous Ta42Si13N45 film with a femtosecond laser pulse

Applied physics. A, Materials science & processing, 2011-07, Vol.104 (1), p.357-364

2011

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Tantalum-based diffusion barriers in Si/Cu VLSi metallizations

Journal of applied physics, 1991-08, Vol.70 (3), p.1369-1373

1991

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Reactively sputtered Ti-Si-N films I. Physical properties

Journal of applied physics, 1997-01, Vol.81 (2), p.656-663

1997

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Highly metastable amorphous or near-amorphous ternary films (mictamict alloys)

Microelectronic engineering, 2001-03, Vol.55 (1), p.357-367

2001

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Nickel film on (001) SiC: Thermally induced reactions

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-10, Vol.56 (1), p.11-23

1998

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Ti-Si-N diffusion barriers between silicon and copper

IEEE electron device letters, 1994-08, Vol.15 (8), p.298-300

1994

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Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

Journal of applied physics, 1996-01, Vol.79 (2), p.1109-1115

1996

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Defects production and annealing in self-implanted Si

Journal of applied physics, 1991-07, Vol.70 (2), p.649-655

1991

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Reaction of aluminum-on-titanium bilayer with GaN : Influence of the Al:Ti atomic ratio

Journal of electronic materials, 1999-08, Vol.28 (8), p.949-954

1999

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Properties of reactively sputter-deposited TaN thin films

Thin solid films, 1993-12, Vol.236 (1), p.347-351

1993

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Reactively sputtered Ti-Si-N films. II. Diffusion barriers for Al and Cu metallizations on Si

Journal of applied physics, 1997-01, Vol.81 (2), p.664-671

1997

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Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy

Journal of materials research, 1996-11, Vol.11 (11), p.2738-2743

1996

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Moving species in Ti34Si23N43 oxidation

Thin solid films, 1999-07, Vol.349 (1-2), p.1-3

1999

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Annealing of amorphous Ru–Si–O and Ir–Si–O films in vacuum or dry oxygen

Journal of applied physics, 2003-04, Vol.93 (8), p.4576-4583

2003

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Texture of copper films on Ta35Si18N47 and Ti33Si23N44 underlayers

Thin solid films, 1999-08, Vol.350 (1-2), p.1-4

1999

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Electronic transport in Ru-Si-O and Ir-Si-O amorphous thin films

Microelectronic engineering, 2002, Vol.60 (1-2), p.107-111

2002

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Reproducing the backscattering spectrum of an amorphous target from a single crystal

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-11, Vol.211 (3), p.408-414

2003

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Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

Applied physics. A, Materials science & processing, 1997-07, Vol.65 (1), p.43-45

1997

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Wet oxidation of Ti34Si23N43

Journal of applied physics, 1999-02, Vol.85 (3), p.1871-1875

1999

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Wet oxidation of Ti34Si23N43 thin films with and without pre-annealing

Surface & coatings technology, 2000-02, Vol.124 (2-3), p.162-168

2000

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Thermal stability of amorphous Ti3Si1O8 thin films

Microelectronic engineering, 2001-03, Vol.55 (1-4), p.183-188

2001

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Growth and properties of W–Si–N diffusion barriers deposited by chemical vapor deposition

Thin solid films, 1998-05, Vol.320 (1), p.10-14

1998

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Reactively sputtered Ru–Si–O films

Journal of applied physics, 1999-08, Vol.86 (4), p.1974-1981

1999

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Diffusion barriers in thin films

Thin solid films, 1978-08, Vol.52 (3), p.415-443

Nicolet, M.-A.

1978

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Electrical resistivity change in amorphous Ta42Si13N45 films by stress relaxation

Irradiation of amorphous Ta42Si13N45 film with a femtosecond laser pulse

Tantalum-based diffusion barriers in Si/Cu VLSi metallizations

Reactively sputtered Ti-Si-N films I. Physical properties

Highly metastable amorphous or near-amorphous ternary films (mictamict alloys)

Nickel film on (001) SiC: Thermally induced reactions

Ti-Si-N diffusion barriers between silicon and copper

Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

Defects production and annealing in self-implanted Si

Reaction of aluminum-on-titanium bilayer with GaN : Influence of the Al:Ti atomic ratio

Properties of reactively sputter-deposited TaN thin films

Reactively sputtered Ti-Si-N films. II. Diffusion barriers for Al and Cu metallizations on Si

Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy

Moving species in Ti34Si23N43 oxidation

Annealing of amorphous Ru–Si–O and Ir–Si–O films in vacuum or dry oxygen

Texture of copper films on Ta35Si18N47 and Ti33Si23N44 underlayers

Electronic transport in Ru-Si-O and Ir-Si-O amorphous thin films

Reproducing the backscattering spectrum of an amorphous target from a single crystal

Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

Wet oxidation of Ti34Si23N43

Wet oxidation of Ti34Si23N43 thin films with and without pre-annealing

Thermal stability of amorphous Ti3Si1O8 thin films

Growth and properties of W–Si–N diffusion barriers deposited by chemical vapor deposition

Reactively sputtered Ru–Si–O films

Diffusion barriers in thin films

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