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Electronic Structure of Semiconductor Interfaces

Monch, Winfried

1, 2024

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Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures

Journal of applied physics, 2011-06, Vol.109 (11), p.113724-113724-10

Mönch, Winfried

2011

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Explanation of the barrier heights of graphene Schottky contacts by the MIGS-and-electronegativity concept

Journal of applied physics, 2016-09, Vol.120 (10)

Mönch, Winfried

2016

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On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts

Journal of applied physics, 2012-04, Vol.111 (7), p.073706-073706-7

Mönch, Winfried

2012

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On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts

Journal of materials science. Materials in electronics, 2016-02, Vol.27 (2), p.1444-1448

Mönch, Winfried

2016

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On the band-structure lineup at Schottky contacts and semiconductor heterostructures

Materials science in semiconductor processing, 2014-12, Vol.28, p.2-12

Monch, Winfried

2014

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On the electric-dipole contribution to the valence-band offsets in semiconductor-oxide heterostructures

Applied physics letters, 2007-07, Vol.91 (4)

Mönch, Winfried

2007

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On selenium p–n heterojunctions and Schottky contacts

Journal of materials science. Materials in electronics, 2015-02, Vol.26 (2), p.1097-1101

Monch, Winfried

2015

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Rezension von: Mönch, Winfried, Das Rote Kreuz im Rems-Murr-Kreis 1866-1996

Württembergisch Franken, 2023-06, Vol.82, p.357

2023

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On the band structure lineup of ZnO heterostructures

Applied physics letters, 2005-04, Vol.86 (16), p.162101-162101-2

Mönch, Winfried

2005

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Slope parameters of the barrier heights of metal-organic contacts

Applied physics letters, 2006-03, Vol.88 (11), p.112116-112116-3

Mönch, Winfried

2006

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Empirical tight-binding calculation of the branch-point energy of the continuum of interface-induced gap states

Journal of applied physics, 1996-11, Vol.80 (9), p.5076-5082

Mönch, Winfried

1996

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Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states

Journal of materials science. Materials in electronics, 2018-12, Vol.29 (23), p.19607-19613

Mönch, Winfried

2018

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On the band-structure lineup at Ga^sub 2^O3, Gd^sub 2^O3, and Ga^sub 2^O3(Gd^sub 2^O3) heterostructures and Ga^sub 2^O3 Schottky contacts

Journal of materials science. Materials in electronics, 2016-02, Vol.27 (2), p.1444

Mönch, Winfried

2016

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Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states

Applied physics letters, 1998-04, Vol.72 (15), p.1899-1901

Mönch, Winfried

1998

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Interface-induced gap states and band-structure lineup at TiO2 heterostructures and Schottky contacts

Journal of applied physics, 2010-01, Vol.107 (1)

Mönch, Winfried

2010

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Chemical trends of barrier heights in metal-semiconductor contacts: on the theory of the slope parameter

Applied surface science, 1996-02, Vol.92 (1-4), p.367-371

Mönch, Winfried

1996

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On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states

Applied physics letters, 2008-10, Vol.93 (17)

Mönch, Winfried

2008

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Interface-induced gap states and band-structure lineup at TiO 2 heterostructures and Schottky contacts

Journal of applied physics, 2010-01, Vol.107 (1), p.013706-013706-6

Mönch, Winfried

2010

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On the band structure lineup at interfaces of SiO2, Si3N4, and high-κ dielectrics

Applied physics letters, 2005-03, Vol.86 (12)

Mönch, Winfried

2005

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On the explanation of the barrier heights of InP Schottky contactsby metal-induced gap states

Applied physics letters, 2008-10, Vol.93 (17), p.172118-172118-3

Mönch, Winfried

2008

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Elementary calculation of the branch-point energy in the continuum of interface-induced gap states

Applied surface science, 1997-06, Vol.117, p.380-387

Mönch, Winfried

1997

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On the electric-dipole contribution to the valence-band offsetsin semiconductor-oxide heterostructures

Applied physics letters, 2007-07, Vol.91 (4), p.042117-042117-3

Mönch, Winfried

2007

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Comment on "Band gap and band offset of ( GaIn ) ( PSb ) lattice matchedto InP " [ Appl. Phys. Lett. 87 , 032102 ( 2005 )]

Applied physics letters, 2006-09, Vol.89 (12), p.126101-126101-2

Mönch, Winfried

2006

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Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-07, Vol.17 (4), p.1867-1876

Mönch, Winfried

1999

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Electronic Structure of Semiconductor Interfaces

Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures

Explanation of the barrier heights of graphene Schottky contacts by the MIGS-and-electronegativity concept

On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts

On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts

On the band-structure lineup at Schottky contacts and semiconductor heterostructures

On the electric-dipole contribution to the valence-band offsets in semiconductor-oxide heterostructures

On selenium p–n heterojunctions and Schottky contacts

Rezension von: Mönch, Winfried, Das Rote Kreuz im Rems-Murr-Kreis 1866-1996

On the band structure lineup of ZnO heterostructures

Slope parameters of the barrier heights of metal-organic contacts

Empirical tight-binding calculation of the branch-point energy of the continuum of interface-induced gap states

Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states

On the band-structure lineup at Ga^sub 2^O3, Gd^sub 2^O3, and Ga^sub 2^O3(Gd^sub 2^O3) heterostructures and Ga^sub 2^O3 Schottky contacts

Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states

Interface-induced gap states and band-structure lineup at TiO2 heterostructures and Schottky contacts

Chemical trends of barrier heights in metal-semiconductor contacts: on the theory of the slope parameter

On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states

Interface-induced gap states and band-structure lineup at TiO 2 heterostructures and Schottky contacts

On the band structure lineup at interfaces of SiO2, Si3N4, and high-κ dielectrics

On the explanation of the barrier heights of InP Schottky contactsby metal-induced gap states

Elementary calculation of the branch-point energy in the continuum of interface-induced gap states

On the electric-dipole contribution to the valence-band offsetsin semiconductor-oxide heterostructures

Comment on "Band gap and band offset of ( GaIn ) ( PSb ) lattice matchedto InP " [ Appl. Phys. Lett. 87 , 032102 ( 2005 )]

Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities

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