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Transport mechanisms in hyperdoped silicon solar cells

Semiconductor science and technology, 2023-12, Vol.38 (12), p.124001

2023

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Ti supersaturated Si by microwave annealing processes

Semiconductor science and technology, 2023-02, Vol.38 (2), p.24004

2023

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Electronic transport properties of Ti-impurity band in Si

Journal of physics. D, Applied physics, 2009-04, Vol.42 (8), p.085110

2009

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Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

Solar energy materials and solar cells, 2018-10, Vol.185, p.61-65

2018

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Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Applied physics letters, 2009-01, Vol.94 (4)

2009

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Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

Journal of physics. D, Applied physics, 2007-09, Vol.40 (17), p.5256-5265

2007

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Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

Applied physics letters, 2014-05, Vol.104 (21)

2014

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Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Sub-bandgap absorption in Ti implanted Si over the Mott limit

Journal of applied physics, 2011-06, Vol.109 (11), p.113541-113541-6

2011

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Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

Journal of physics. D, Applied physics, 2016-07, Vol.49 (27), p.275103

2016

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Two-layer Hall effect model for intermediate band Ti-implanted silicon

Journal of applied physics, 2011-03, Vol.109 (6), p.063718-063718-8

2011

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Intermediate band mobility in heavily titanium-doped silicon layers

Solar energy materials and solar cells, 2009-09, Vol.93 (9), p.1668-1673

2009

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Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells

IEEE journal of photovoltaics, 2023-09, Vol.13 (5), p.1-7

2023

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High quality Ti-implanted Si layers above the Mott limit

Journal of applied physics, 2010-05, Vol.107 (10), p.103524-103524-5

2010

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A robust method to determine the contact resistance using the van der Pauw set up

Measurement : journal of the International Measurement Confederation, 2017-02, Vol.98, p.151-158

2017

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Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

Journal of applied physics, 2000-02, Vol.87 (3), p.1187-1192

2000

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Electrical decoupling effect on intermediate band Ti-implanted silicon layers

Journal of physics. D, Applied physics, 2013-04, Vol.46 (13), p.135108-1-6

2013

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Titanium doped silicon layers with very high concentration

Journal of applied physics, 2008-07, Vol.104 (1), p.016105-016105-3

2008

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Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

Journal of applied physics, 2012-12, Vol.112 (11)

2012

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Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III–V nitrides

Journal of applied physics, 1997-03, Vol.81 (5), p.2442-2444

1997

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Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

Applied physics letters, 2013-07, Vol.103 (3)

2013

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Thermal stability of intermediate band behavior in Ti implanted Si

Solar energy materials and solar cells, 2010-11, Vol.94 (11), p.1907-1911

2010

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Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Journal of applied physics, 2003-12, Vol.94 (12), p.7462-7469

2003

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UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

Semiconductor science and technology, 2011-11, Vol.26 (11), p.115003

2011

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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

Journal of applied physics, 2010-06, Vol.107 (11), p.114104-114104-5

2010

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Transport mechanisms in hyperdoped silicon solar cells

Ti supersaturated Si by microwave annealing processes

Electronic transport properties of Ti-impurity band in Si

Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

Sub-bandgap absorption in Ti implanted Si over the Mott limit

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

Two-layer Hall effect model for intermediate band Ti-implanted silicon

Intermediate band mobility in heavily titanium-doped silicon layers

Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells

High quality Ti-implanted Si layers above the Mott limit

A robust method to determine the contact resistance using the van der Pauw set up

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

Titanium doped silicon layers with very high concentration

Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III–V nitrides

Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

Thermal stability of intermediate band behavior in Ti implanted Si

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

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