UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

Journal of crystal growth, 2012-08, Vol.352 (1), p.39-42

2012

Volltextzugriff (PDF)

High-purity semi-insulating 4H-SiC for microwave device applications

Journal of electronic materials, 2003-05, Vol.32 (5), p.432-436

2003

Volltextzugriff (PDF)

High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

Journal of electronic materials, 2002-05, Vol.31 (5), p.366-369

2002

Volltextzugriff (PDF)

High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications

MRS proceedings, 2006, Vol.911, Article 0911-B01-03

2006

Volltextzugriff (PDF)

Dislocation Content of Micropipes in SiC

Physical review letters, 1998, Vol.80 (4), p.740-741

1998

Volltextzugriff (PDF)

Progress in the industrial production of SiC substrates for semiconductor devices

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.327-331

2001

Volltextzugriff (PDF)

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

Superlattices and microstructures, 2006-10, Vol.40 (4), p.195-200

2006

Volltextzugriff (PDF)

The status of SiC bulk growth from an industrial point of view

Journal of crystal growth, 2000-04, Vol.211 (1), p.325-332

2000

Volltextzugriff (PDF)

Progress in SiC: from material growth to commercial device development

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.1-8

1999

Volltextzugriff (PDF)

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

MRS proceedings, 1996, Vol.423, Article 215

1996

Volltextzugriff (PDF)

Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation

Journal of crystal growth, 1999-03, Vol.198, p.1005-1010

1999

Volltextzugriff (PDF)

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

Materials science forum, 2004-06, Vol.457-460, p.35-40

2004

Volltextzugriff (PDF)

The as-Grown SiC (0001) Surface as Observed by Reflection Electron Microscopy

Crystal research and technology (1979), 1996, Vol.31 (8), p.1001-1005

1996

Volltextzugriff (PDF)

Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

Materials science forum, 2004-06, Vol.457-460, p.3-8

2004

Volltextzugriff (PDF)

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

Materials science forum, 2003-09, Vol.433-436, p.39-44

2003

Volltextzugriff (PDF)

High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

Materials science forum, 2002-04, Vol.389-393, p.23-28

2002

Volltextzugriff (PDF)

Large Diameter 4H-SiC Substrates for Commercial Power Applications

Materials science forum, 2004-06, Vol.457-460, p.41-46

2004

Volltextzugriff (PDF)

Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC

Materials science forum, 1998-02, Vol.264-268, p.623-626

1998

Volltextzugriff (PDF)

SiC-bulk growth by physical-vapor transport and its global modelling

Journal of crystal growth, 1997-04, Vol.174 (1), p.669-674

1997

Volltextzugriff (PDF)

In-plane transport properties of heavily delta -doped GaAs n-i-p-i superlattices: Metal-insulator transition, weak and strong localization

Physical review. B, Condensed matter, 1996-11, Vol.54 (19), p.13980-13995

1996

Volltextzugriff (PDF)

Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC

Physica. B, Condensed matter, 2001-12, Vol.308, p.671-674

2001

Volltextzugriff (PDF)

Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications

MRS proceedings, 2004, Vol.815, Article J2.4

2004

Volltextzugriff (PDF)

Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications

Materials science forum, 2000-05, Vol.338-342, p.3-8

2000

Volltextzugriff (PDF)

Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth

Materials science forum, 2000-05, Vol.338-342, p.43-46

2000

Volltextzugriff (PDF)

Formation of micropipes in SiC under kinetic aspects

Journal of crystal growth, 1997-08, Vol.179 (3), p.510-514

1997

Volltextzugriff (PDF)

1 – 25 von 219

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(185)
Mit Volltextzugriff
(192)

Publikationsform

Sprache

Englisch
(175)
Deutsch
(43)
Japanisch
(39)
Norwegisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(125)
Life Sciences & Biomedicine
(61)
Physical Sciences
(52)
Humans
(43)
Technology
(40)
Physics
(39)
Biological And Medical Sciences
(25)
Materials Science
(24)
Female
(23)
Male
(22)
Materials Science, Multidisciplinary
(21)
Medical Sciences
(18)
Animals
(17)
Exact Sciences And Technology
(16)
Adult
(14)
Medicin Och Hälsovetenskap
(13)
Physics, Applied
(12)
Fundamental And Applied Biological Sciences. Psychology
(11)
Engineering
(10)
Physics, Condensed Matter
(10)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

High-purity semi-insulating 4H-SiC for microwave device applications

High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications

Dislocation Content of Micropipes in SiC

Progress in the industrial production of SiC substrates for semiconductor devices

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

The status of SiC bulk growth from an industrial point of view

Progress in SiC: from material growth to commercial device development

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

The as-Grown SiC (0001) Surface as Observed by Reflection Electron Microscopy

Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

Large Diameter 4H-SiC Substrates for Commercial Power Applications

Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC

SiC-bulk growth by physical-vapor transport and its global modelling

In-plane transport properties of heavily delta -doped GaAs n-i-p-i superlattices: Metal-insulator transition, weak and strong localization

Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC

Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications

Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications

Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth

Formation of micropipes in SiC under kinetic aspects

Suchergebnisse filtern