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Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

Journal of applied physics, 2011-02, Vol.109 (3)

2011

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Strain adjustment with thin virtual substrates

Solid-state electronics, 2004-08, Vol.48 (8), p.1257-1263

2004

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Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Microelectronic engineering, 2009-03, Vol.86 (3), p.218-223

2009

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MBE growth of low-defect Si layers highly doped with Sb

Thin solid films, 2008-11, Vol.517 (1), p.227-228

2008

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X-ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers

Physica status solidi. C, 2013-01, Vol.10 (1), p.52-55

2013

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Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy

Thin solid films, 2008-11, Vol.517 (1), p.265-268

2008

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Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures

Applied surface science, 2009-10, Vol.256 (1), p.267-273

2009

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Reduced self-heating by strained silicon substrate engineering

Applied surface science, 2008-07, Vol.254 (19), p.6182-6185

2008

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

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Interplay of dislocation network and island arrangement in SiGe films grown on Si(001)

Thin solid films, 2000-12, Vol.380 (1), p.25-28

2000

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Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE

Surface science, 2007-07, Vol.601 (13), p.2774-2777

2007

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Electrochemical defect revealing in thin SiGe layers

Thin solid films, 2006-06, Vol.508 (1), p.33-35

2006

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Relaxed SiGe buffers with thicknesses below 0.1 μm

Thin solid films, 2000-07, Vol.369 (1-2), p.152-156

2000

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Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.192-194

2006

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Ion bombardment induced morphology modifications on self-organized semiconductor surfaces

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216, p.178-184

2004

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High Ge content photodetectors on thin SiGe buffers

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.77-83

2002

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X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (⩽100 nm) using a low temperature growth step

Journal of Crystal Growth, 2001-07, Vol.227, p.756-760

2001

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Ion assisted MBE growth of SiGe nanostructures

Thin solid films, 1998-12, Vol.336 (1), p.104-108

1998

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Thin SiGe buffers with high Ge content for n-MOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.341-345

2002

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Imaging of magnetic nanodots on self-organized semiconductor substrates

Physical review. B, Condensed matter and materials physics, 2005-06, Vol.71 (21), p.214423.1-214423.6, Article 214422

2005

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Strain relaxation of metastable SiGe/Si: Investigation with two complementary X-ray techniques

Journal of applied physics, 2012-03, Vol.111 (6), p.063507-063507-10

2012

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Relaxed SiGe buffer layer growth with point defect injection

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-02, Vol.71 (1-3), p.14-19

2000

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Strained Si HFETs for microwave applications: state-of-the-art and further approaches

Solid-state electronics, 2004-08, Vol.48 (8), p.1443-1452

2004

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New virtual substrate concept for vertical MOS transistors

Thin solid films, 1998-12, Vol.336 (1), p.319-322

1998

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Composition and strain in thin Si 1 − x Ge x virtual substrates measuredby micro-Raman spectroscopy and x-ray diffraction

Journal of applied physics, 2011-02, Vol.109 (3), p.033502-033502-11

2011

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Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

Strain adjustment with thin virtual substrates

Strained Si/SiGe MOS technology: Improving gate dielectric integrity

MBE growth of low-defect Si layers highly doped with Sb

X-ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers

Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy

Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures

Reduced self-heating by strained silicon substrate engineering

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Interplay of dislocation network and island arrangement in SiGe films grown on Si(001)

Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE

Electrochemical defect revealing in thin SiGe layers

Relaxed SiGe buffers with thicknesses below 0.1 μm

Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates

Ion bombardment induced morphology modifications on self-organized semiconductor surfaces

High Ge content photodetectors on thin SiGe buffers

X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (⩽100 nm) using a low temperature growth step

Ion assisted MBE growth of SiGe nanostructures

Thin SiGe buffers with high Ge content for n-MOSFETs

Imaging of magnetic nanodots on self-organized semiconductor substrates

Strain relaxation of metastable SiGe/Si: Investigation with two complementary X-ray techniques

Relaxed SiGe buffer layer growth with point defect injection

Strained Si HFETs for microwave applications: state-of-the-art and further approaches

New virtual substrate concept for vertical MOS transistors

Composition and strain in thin Si 1 − x Ge x virtual substrates measuredby micro-Raman spectroscopy and x-ray diffraction

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