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High peak power and high average power subnanosecond modulator operating at a repetition frequency of 3.5 kHz

IEEE transactions on plasma science, 2002-10, Vol.30 (5), p.1700-1704

2002

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High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time

Semiconductors (Woodbury, N.Y.), 2016-03, Vol.50 (3), p.394-403

2016

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Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode

Semiconductors (Woodbury, N.Y.), 2017-05, Vol.51 (5), p.649-656

2017

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On the picosecond switching of a high-density current (60 kA/cm2) via a Si closing switch based on a superfast ionization front

Semiconductors (Woodbury, N.Y.), 2014-08, Vol.48 (8), p.1067-1078

2014

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Operation of a semiconductor opening switch at ultrahigh current densities

Semiconductors (Woodbury, N.Y.), 2012-04, Vol.46 (4), p.519-527

2012

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Generation of powerful microwave voltage oscillations in a diffused silicon diode

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.670-678

2013

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Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures

Semiconductors (Woodbury, N.Y.), 2010-07, Vol.44 (7), p.931-937

2010

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Solid-State SOS-Based Generator Providing a Peak Power of 4 GW

IEEE transactions on plasma science, 2006-10, Vol.34 (5), p.1873-1878

2006

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Ultra-high-power repetitive solid state DBD-based switching

IEEE Conference Record - Abstracts. PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference (Cat. No.01CH37, 2001, p.359

2001

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Nanosecond microwave generator based on the relativistic 38-GHz backward-wave oscillator and all-solid-state pulsed power modulator

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358), 1999, Vol.1, p.202-205 vol.1

1999

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Repetitive short pulse SOS-generators

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358), 1999, Vol.2, p.1226-1229 vol.2

1999

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Experimental study of SOS-based generator for low impedance load

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358), 1999, Vol.2, p.1230-1233 vol.2

1999

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Subnanosecond modulator possessing a 700 MW peak power and average power of 1.5 kW at repetition frequency of 3.5 kHz

2001

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Compact SOS-based 400-keV electron beam accelerator

2000 13th International Conference on High-Power Particle Beams, 2000, p.964-967

2000

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Repetitive 200 kV nanosecond all solid state pulser with a semiconductor opening switch

Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference, 1995, Vol.2, p.1211-1214 vol.2

1995

Volltextzugriff (PDF)

SOS/DBD-based solid state switching for ultra-high-power short pulse generation

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop, 2002, p.178-182

2002

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Subnanosecond hybrid modulator for UWB and HPM applications

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop, 2002, p.248-251

2002

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Ultra-high-power repetitive solid state DBD-based switching

PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251), 2001, Vol.1, p.329-332 vol.1

2001

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A NOVEL NANOSECOND SEMICONDUCTOR OPENING SWITCH FOR MEGAVOLT REPETITIVE PULSED POWER TECHNOLOGY: EXP

Ninth IEEE International Pulsed Power Conference, 1993, Vol.1, p.134

1993

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Repetitive nanosecond all-solid-state pulsers based on SOS diodes

Digest of Technical Papers. 11th IEEE International Pulsed Power Conference (Cat. No.97CH36127), 1997, Vol.2, p.992-998 vol.2

1997

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SOS-based pulsed power: development and applications

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358), 1999, Vol.1, p.153-156 vol.1

1999

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Subnanosecond modulator possessing a 700 MW peak power and average power of 1.5 kW at repetition frequency of 3.5 khz

2001

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Subnanosecond high-density current interruption in SOS diodes

Digest of Technical Papers. 11th IEEE International Pulsed Power Conference (Cat. No.97CH36127), 1997, Vol.1, p.663-666 vol.1

1997

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Semiconductor opening switch research at IEP

Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference, 1995, Vol.1, p.298-305 vol.1

1995

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High peak power and high average power subnanosecond modulator operating at a repetition frequency of 3.5 kHz

High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time

Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode

On the picosecond switching of a high-density current (60 kA/cm2) via a Si closing switch based on a superfast ionization front

Operation of a semiconductor opening switch at ultrahigh current densities

Generation of powerful microwave voltage oscillations in a diffused silicon diode

Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures

Solid-State SOS-Based Generator Providing a Peak Power of 4 GW

Ultra-high-power repetitive solid state DBD-based switching

Nanosecond microwave generator based on the relativistic 38-GHz backward-wave oscillator and all-solid-state pulsed power modulator

Repetitive short pulse SOS-generators

Experimental study of SOS-based generator for low impedance load

Subnanosecond modulator possessing a 700 MW peak power and average power of 1.5 kW at repetition frequency of 3.5 kHz

Compact SOS-based 400-keV electron beam accelerator

Repetitive 200 kV nanosecond all solid state pulser with a semiconductor opening switch

SOS/DBD-based solid state switching for ultra-high-power short pulse generation

Subnanosecond hybrid modulator for UWB and HPM applications

Ultra-high-power repetitive solid state DBD-based switching

A NOVEL NANOSECOND SEMICONDUCTOR OPENING SWITCH FOR MEGAVOLT REPETITIVE PULSED POWER TECHNOLOGY: EXP

Repetitive nanosecond all-solid-state pulsers based on SOS diodes

SOS-based pulsed power: development and applications

Subnanosecond modulator possessing a 700 MW peak power and average power of 1.5 kW at repetition frequency of 3.5 khz

Subnanosecond high-density current interruption in SOS diodes

Semiconductor opening switch research at IEP

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