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Effects of buffer layer structure on polysilicon buffer LOCOS for the isolation of submicron silicon devices

IEEE transactions on electron devices, 1998-10, Vol.45 (10), p.2153-2160

1998

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Characteristics of Ferroelectric Transistors with BaMgF4 Dielectric

ETRI journal, 1998-06, Vol.20 (2), p.241-249

1998

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A Novel Body‐tied Silicon‐On‐Insulator(SOI) n‐channel Metal‐Oxide‐Semiconductor Field‐Effect Transistor with Grounded Body Electrode

ETRI journal, 1996-01, Vol.17 (4), p.1-12

1996

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Determination of the interface trap density in metal oxide semiconductor field-effect transistor through subthreshold slope measurement

Japanese Journal of Applied Physics, 1993-10, Vol.32 (10), p.4393-4397

1993

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Reduction of leakage current at the gate edge of SDB SOI NMOS transistor

IEEE electron device letters, 1995-06, Vol.16 (6), p.236-238

1995

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Determination of flat-band voltages for fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET's)

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992-09, Vol.31 (9A), p.2678-2681

1992

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A physical model of floating body thin film silicon-on-insulator nMOSFET with parasitic bipolar transistor

IEEE transactions on electron devices, 1994-05, Vol.41 (5), p.726-733

1994

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A New Method for Extracting Interface Trap Density in Short‐Channel MOSFETs from Substrate‐Bias‐Dependent Subthreshold Slopes

ETRI journal, 1993-10, Vol.15 (2), p.11-25

Lyu, Jong‐Son

1993

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Modeling of the critical current density of bipolar transistors with retrograde collector doping profile

IEEE electron device letters, 1996-03, Vol.17 (3), p.109-111

1996

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A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes

ETRI journal, 1993-10, Vol.15 (2), p.10-25

Jong-Son Lyu

1993

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A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes

ETRI journal, 1993, Vol.15 (2), p.11-25

Lyu, Jong-Son

1993

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A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

ETRI journal, 1996, Vol.17 (4), p.1-12

1996

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Characteristics of Ferroelectric Transistors with BaMgF4 Dielectric

ETRI journal, 1998-03, Vol.20 (2), p.241-250

1998

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Characteristics of Ferroelectric Transistors with $BaMgF_4$ Dielectric

ETRI journal, 1998, Vol.20 (2), p.241-249

1998

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A Novel Body-Tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

ETRI journal, 1995-04, Vol.17 (4), p.1-12

1995

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Polysilicon source/drain thin film SOI MOSFET by using CMP technology

1996 IEEE International SOI Conference Proceedings, 1996, p.120-121

1996

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Allowable surface silicon thickness for fully-depleted SOI MOSFET's

1991 IEEE International SOI Conference Proceedings, 1991, p.56-57

1991

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Recessed channel (RC) SOI NMOSFETs with self-aligned polysilicon gate formed on the RC region

1996 IEEE International SOI Conference Proceedings, 1996, p.122-123

1996

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Metal-ferroelectric-semiconductor field-effect transistor (MPSFET) for single transistor memory by using Poly-Si source/drain and BaMgF/sub 4/ dielectric

International Electron Devices Meeting. Technical Digest, 1996, p.503-506

1996

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Analyses on the interface trap density and doping density of grounded-body SOI (GBSOI) nMOSFET

1995 IEEE International SOI Conference Proceedings, 1995, p.82-83

1995

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Substrate floating effects of p-channel SOI MOSFETs

1990 IEEE SOS/SOI Technology Conference. Proceedings, 1990, p.87-88

1990

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SOI MOSFET with grounded body potential by using the silicon direct bonding (SDB) technology

Proceedings of 1993 IEEE International SOI Conference, 1993, p.96-97

1993

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Effects of buffer layer structure on polysilicon buffer LOCOS for the isolation of submicron silicon devices

Characteristics of Ferroelectric Transistors with BaMgF4 Dielectric

A Novel Body‐tied Silicon‐On‐Insulator(SOI) n‐channel Metal‐Oxide‐Semiconductor Field‐Effect Transistor with Grounded Body Electrode

Determination of the interface trap density in metal oxide semiconductor field-effect transistor through subthreshold slope measurement

Reduction of leakage current at the gate edge of SDB SOI NMOS transistor

Determination of flat-band voltages for fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET's)

A physical model of floating body thin film silicon-on-insulator nMOSFET with parasitic bipolar transistor

A New Method for Extracting Interface Trap Density in Short‐Channel MOSFETs from Substrate‐Bias‐Dependent Subthreshold Slopes

Modeling of the critical current density of bipolar transistors with retrograde collector doping profile

A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes

A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes

A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

Characteristics of Ferroelectric Transistors with BaMgF4 Dielectric

Characteristics of Ferroelectric Transistors with $BaMgF_4$ Dielectric

A Novel Body-Tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

Polysilicon source/drain thin film SOI MOSFET by using CMP technology

Allowable surface silicon thickness for fully-depleted SOI MOSFET's

Recessed channel (RC) SOI NMOSFETs with self-aligned polysilicon gate formed on the RC region

Metal-ferroelectric-semiconductor field-effect transistor (MPSFET) for single transistor memory by using Poly-Si source/drain and BaMgF/sub 4/ dielectric

Analyses on the interface trap density and doping density of grounded-body SOI (GBSOI) nMOSFET

Substrate floating effects of p-channel SOI MOSFETs

SOI MOSFET with grounded body potential by using the silicon direct bonding (SDB) technology

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