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An ATCA processor for Level-1 trigger primitive generation and readout of the CMS barrel muon detectors

Journal of instrumentation, 2023-02, Vol.18 (2), p.C02039

2023

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Piezoelectricity, Phase Stability, and Surface Diffusion in Multicomponent Nitrides

Tholander, Christopher

2016

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Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces

AIP advances, 2018-06, Vol.8 (6), p.065301-065301-7

Lymperakis, L.

2018

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Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

Physical review. B, Condensed matter and materials physics, 2009-06, Vol.79 (24), Article 241308

2009

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Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Hydrogen-enhanced local plasticity at dilute bulk H concentrations: The role of H–H interactions and the formation of local hydrides

Acta materialia, 2011-05, Vol.59 (8), p.2969-2980

2011

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Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries

Physical review letters, 2018-07, Vol.121 (1), p.015702-015702, Article 015702

2018

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Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN

Physical review letters, 2013-01, Vol.110 (3), p.036103-036103, Article 036103

2013

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Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

Scientific reports, 2021-10, Vol.11 (1), p.20606-20606, Article 20606

2021

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Kinetic Monte Carlo simulations for AlN and AlGaN epitaxial growth on AlN

Journal of crystal growth, 2023-04, Vol.607, p.127125, Article 127125

2023

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Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

Applied physics letters, 2013-10, Vol.103 (15)

2013

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The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Journal of applied physics, 2024-07, Vol.136 (4)

2024

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Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates

Journal of applied physics, 2022-12, Vol.132 (22)

2022

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Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

Journal of applied physics, 2016-06, Vol.119 (22)

2016

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Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al x Ga1− x N m -plane surfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-03, Vol.42 (2)

2024

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Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-03, Vol.42 (2)

2024

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Al5+αSi5+δN12, a new Nitride compound

Scientific reports, 2019-11, Vol.9 (1), p.1-8, Article 15907

2019

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Strain induced deep electronic states around threading dislocations in GaN

Physical review letters, 2004-11, Vol.93 (19), p.196401.1-196401.4, Article 196401

2004

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Sparse Aperiodic Optical Phased Arrays on Polymer Integration Platform

IEEE photonics technology letters, 2024-04, Vol.36 (7), p.1-1

2024

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Erratum: Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations [Phys. Rev. Materials 5 , 044605 (2021)]

Physical review materials, 2022-01, Vol.6 (1), Article 019901

2022

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Revealing the Design Principles of High-Performance Biological Composites Using Ab initio and Multiscale Simulations: The Example of Lobster Cuticle

Advanced materials (Weinheim), 2010-01, Vol.22 (4), p.519-526

2010

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Role of hole confinement in the recombination properties of InGaN quantum structures

Scientific reports, 2019-06, Vol.9 (1), p.9047-10, Article 9047

2019

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MEAM interatomic potentials of Ni, Re, and Ni–Re alloys for atomistic fracture simulations

Modelling and simulation in materials science and engineering, 2022-01, Vol.30 (1), p.15002

2022

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Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.855-865

2015

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Robustness and optimal use of design principles of arthropod exoskeletons studied by ab initio-based multiscale simulations

Journal of the mechanical behavior of biomedical materials, 2011-02, Vol.4 (2), p.129-145

2011

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An ATCA processor for Level-1 trigger primitive generation and readout of the CMS barrel muon detectors

Piezoelectricity, Phase Stability, and Surface Diffusion in Multicomponent Nitrides

Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Hydrogen-enhanced local plasticity at dilute bulk H concentrations: The role of H–H interactions and the formation of local hydrides

Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries

Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

Kinetic Monte Carlo simulations for AlN and AlGaN epitaxial growth on AlN

Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al x Ga1− x N m -plane surfaces

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces

Al5+αSi5+δN12, a new Nitride compound

Strain induced deep electronic states around threading dislocations in GaN

Sparse Aperiodic Optical Phased Arrays on Polymer Integration Platform

Erratum: Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations [Phys. Rev. Materials 5 , 044605 (2021)]

Revealing the Design Principles of High-Performance Biological Composites Using Ab initio and Multiscale Simulations: The Example of Lobster Cuticle

Role of hole confinement in the recombination properties of InGaN quantum structures

MEAM interatomic potentials of Ni, Re, and Ni–Re alloys for atomistic fracture simulations

Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity

Robustness and optimal use of design principles of arthropod exoskeletons studied by ab initio-based multiscale simulations

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