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Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography

Nature communications, 2012-07, Vol.3 (1), p.935-935, Article 935

2012

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Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si(100) surfaces

Applied physics letters, 2003-12, Vol.83 (24), p.5029-5031

2003

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Silicon-based molecular nanotechnology

Nanotechnology, 2000-06, Vol.11 (2), p.70-76

2000

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Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms

Science (American Association for the Advancement of Science), 1995-06, Vol.268 (5217), p.1590-1592

1995

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Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

Applied physics letters, 1996-04, Vol.68 (18), p.2526-2528

1996

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Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100)

Physical review letters, 1998-02, Vol.80 (6), p.1336-1339

1998

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Giant isotope effect in hot electron degradation of metal oxide silicon devices

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.406-416

1998

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Laser Absorption Scanning Tunneling Microscopy of Carbon Nanotubes

Nano letters, 2006-01, Vol.6 (1), p.45-49

2006

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On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

IEEE electron device letters, 2000-01, Vol.21 (1), p.24-26

2000

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Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy

Applied physics letters, 2001-01, Vol.78 (3), p.386-388

2001

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Breaking individual chemical bonds via STM-induced excitations

Surface science, 1996-08, Vol.363 (1), p.368-377

1996

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STM-induced H atom desorption from Si(100): isotope effects and site selectivity

Chemical physics letters, 1996-07, Vol.257 (1), p.148-154

1996

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Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2000-07, Vol.18 (4), p.1349-1353

2000

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Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability

IEEE electron device letters, 1997-03, Vol.18 (3), p.81-83

1997

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Atomic resolution scanning tunneling microscope study of single-walled carbon nanotubes on GaAs(110)

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-07, Vol.22 (4), p.2005-2007

2004

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Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect

IEEE electron device letters, 2003-07, Vol.24 (7), p.487-489

2003

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An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps

IEEE electron device letters, 2003-10, Vol.24 (10), p.655-657

2003

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Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

IEEE electron device letters, 2000-05, Vol.21 (5), p.221-223

2000

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UHV STM nanofabrication: progress, technology spin-offs, and challenges

Proceedings of the IEEE, 1997-04, Vol.85 (4), p.589-600

Lyding, J.W.

1997

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Experimental evidence of Si–H bond energy variation at SiO2–Si interface

Applied physics letters, 2000-11, Vol.77 (21), p.3388-3390

2000

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Deuterium passivation of interface traps in MOS devices

IEEE electron device letters, 2001-09, Vol.22 (9), p.441-443

2001

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Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Applied physics letters, 2000-10, Vol.77 (15), p.2358-2360

2000

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Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces

Journal of applied physics, 2001-12, Vol.90 (12), p.6536-6538

2001

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A new technique to quantify deuterium passivation of interface traps in MOS devices

IEEE electron device letters, 2001-05, Vol.22 (5), p.203-205

2001

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Ultrahigh vacuum–scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technology

Applied surface science, 1998-06, Vol.130, p.221-230

1998

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Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography

Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si(100) surfaces

Silicon-based molecular nanotechnology

Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms

Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100)

Giant isotope effect in hot electron degradation of metal oxide silicon devices

Laser Absorption Scanning Tunneling Microscopy of Carbon Nanotubes

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy

Breaking individual chemical bonds via STM-induced excitations

STM-induced H atom desorption from Si(100): isotope effects and site selectivity

Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope

Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability

Atomic resolution scanning tunneling microscope study of single-walled carbon nanotubes on GaAs(110)

Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect

An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

UHV STM nanofabrication: progress, technology spin-offs, and challenges

Experimental evidence of Si–H bond energy variation at SiO2–Si interface

Deuterium passivation of interface traps in MOS devices

Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces

A new technique to quantify deuterium passivation of interface traps in MOS devices

Ultrahigh vacuum–scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technology

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