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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, p.1-1

2016

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Effect of junction temperature on 1.3 µ m InAs/GaAs quantum dot lasers directly grown on silicon

Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot LasersSupported by the National Key Research and Development Program of China under Grant No 2016YFB0402302, and the National Natural Science Foundation of China under Grant No 91433206

1.55-µm ultrashort pulse InAs/InP quantum dot mode-locked lasers with high output power

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