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High‐Power, Narrow‐Linewidth, and Low‐Noise Quantum Dot Distributed Feedback Lasers

Laser & photonics reviews, 2023-09, Vol.17 (9)

2023

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Effect of junction temperature on 1.3 µm InAs/GaAs quantum dot lasers directly grown on silicon

AIP advances, 2024-02, Vol.14 (2), p.025121-025121-6

2024

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Enhanced performance of quantum dot solar cells based on type II quantum dots

Journal of applied physics, 2014-10, Vol.116 (13)

2014

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1-2.9-THz Tunable Terahertz Beat Signal Generation Based on InAs/InP Quantum-Dot Mode-Locked Laser

IEEE photonics technology letters, 2018-07, Vol.30 (13), p.1234-1237

2018

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Ultrashort Pulse and High Power Mode-Locked Laser With Chirped InAs/InP Quantum Dot Active Layers

IEEE photonics technology letters, 2016-07, Vol.28 (13), p.1481-1484

2016

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Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Influences of Ridge-Waveguide Shape and Width on Performances of InP-Based Coupled Ridge-Waveguide Laser Arrays

IEEE journal of quantum electronics, 2018-10, Vol.54 (5), p.1-4

2018

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2004-nm Ridge-Waveguide Distributed Feedback Lasers With InGaAs Multi-Quantum Wells

IEEE photonics technology letters, 2016-10, Vol.28 (20), p.2257-2260

2016

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Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping

AIP advances, 2020-04, Vol.10 (4), p.045202-045202-5

2020

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Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping

Applied physics letters, 2018-07, Vol.113 (1)

2018

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Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation

AIP advances, 2015-10, Vol.5 (10), p.107115-107115-6

2015

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Significantly improved performances of 1.3 μm InAs/GaAs QD laser by spatially separated dual-doping

Applied physics letters, 2022-07, Vol.121 (2)

2022

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Single longitudinal mode GaAs-based quantum dot laser with refractive index perturbation

Applied optics (2004), 2020-02, Vol.59 (6), p.1648

2020

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Improved linewidth enhancement factor of 1.3- µ m InAs/GaAs quantum dot lasers by direct Si doping

AIP advances, 2021-05, Vol.11 (5)

2021

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Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping

AIP advances, 2021-05, Vol.11 (5), p.055002-055002-5

2021

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1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance

Crystals (Basel), 2020-11, Vol.10 (11), p.980

2020

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Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers

Chinese physics letters, 2016-12, Vol.33 (12), p.63-67

吕尊仁季海铭杨晓光罗帅高凤许锋杨涛

2016

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Effect of junction temperature on 1.3 µ m InAs/GaAs quantum dot lasers directly grown on silicon

AIP advances, 2024-02, Vol.14 (2)

2024

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Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot LasersSupported by the National Key Research and Development Program of China under Grant No 2016YFB0402302, and the National Natural Science Foundation of China under Grant No 91433206

Chinese physics letters, 2016-12, Vol.33 (12)

2016

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1.55-µm ultrashort pulse InAs/InP quantum dot mode-locked lasers with high output power

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, p.1-1

2016

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High‐Power, Narrow‐Linewidth, and Low‐Noise Quantum Dot Distributed Feedback Lasers

Effect of junction temperature on 1.3 µm InAs/GaAs quantum dot lasers directly grown on silicon

Enhanced performance of quantum dot solar cells based on type II quantum dots

1-2.9-THz Tunable Terahertz Beat Signal Generation Based on InAs/InP Quantum-Dot Mode-Locked Laser

Ultrashort Pulse and High Power Mode-Locked Laser With Chirped InAs/InP Quantum Dot Active Layers

Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm

Influences of Ridge-Waveguide Shape and Width on Performances of InP-Based Coupled Ridge-Waveguide Laser Arrays

2004-nm Ridge-Waveguide Distributed Feedback Lasers With InGaAs Multi-Quantum Wells

Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping

Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping

Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation

Significantly improved performances of 1.3 μm InAs/GaAs QD laser by spatially separated dual-doping

Single longitudinal mode GaAs-based quantum dot laser with refractive index perturbation

Improved linewidth enhancement factor of 1.3- µ m InAs/GaAs quantum dot lasers by direct Si doping

Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping

1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance

Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers

Effect of junction temperature on 1.3 µ m InAs/GaAs quantum dot lasers directly grown on silicon

Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot LasersSupported by the National Key Research and Development Program of China under Grant No 2016YFB0402302, and the National Natural Science Foundation of China under Grant No 91433206

1.55-µm ultrashort pulse InAs/InP quantum dot mode-locked lasers with high output power

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