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Substantial improvement of InGaN/GaN visible-light polarization-induced self-depletion phototransistor by thermally oxidized Al2O3

Applied physics letters, 2024-11, Vol.125 (19)

2024

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High performance InGaN/GaN visible-light field effect phototransistor using polarization induced virtual photogate

Applied physics letters, 2023-07, Vol.123 (5)

2023

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Poly(ethyleneglycol)‑b‑Poly(ε-caprolactone-co-γ-hydroxyl-ε- caprolactone) Bearing Pendant Hydroxyl Groups as Nanocarriers for Doxorubicin Delivery

Biomacromolecules, 2012-10, Vol.13 (10), p.3301-3310

2012

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Drying effects on the antioxidant properties of polysaccharides obtained from Agaricus blazei Murrill

Carbohydrate polymers, 2014-03, Vol.103, p.414-417

2014

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High-gain AlGaN/GaN visible-blind avalanche heterojunction phototransistors

Journal of materials science. Materials in electronics, 2020, Vol.31 (1), p.652-657

2020

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Superfluorescence of Sub-Band States in C-Plane In0.1Ga0.9N/GaN Multiple-QWs

Nanomaterials (Basel, Switzerland), 2022-01, Vol.12 (3), p.327

2022

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Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Micromachines (Basel), 2024-01, Vol.15 (1), p.156

2024

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Preventing trench defect formation in InGaN epilayers using Ga-migration-enhanced epitaxy

Applied physics express, 2019-10, Vol.12 (10), p.105502

2019

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A Novel p-Type ZnCoxOy Thin Film Grown by Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (19), p.3381

2022

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Thermosensitive in situ hydrogel based on the hybrid of hyaluronic acid and modified PCL/PEG triblock copolymer

Carbohydrate polymers, 2014-08, Vol.108, p.26-33

2014

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Superhigh gain InGaN/GaN visible-light photodetector using polarization heterointerface barrier and single-carrier superlattices

Optics express, 2024-06, Vol.32 (12), p.22045-22051

2024

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Surface Evolution of Thick InGaN Epilayers with Growth Interruption Time

Journal of physical chemistry. C, 2021-08, Vol.125 (30), p.16643-16651

2021

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InGaN/GaN Visible-Light Heterojunction Phototransistor Featuring High Responsivity, High Speed, and Bias-Controlled Wavelength-Selectivity

IEEE electron device letters, 2021-09, Vol.42 (9), p.1362-1365

2021

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High performance foreign-dopant-free ZnO/AlxGa1−xN ultraviolet phototransistors using atomic-layer-deposited ZnO emitter layer

Journal of alloys and compounds, 2023-03, Vol.937, Article 168433

2023

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Significant performance improvement of AlGaN solar-blind heterojunction phototransistors by using Na2S solution based surface treatment

Applied surface science, 2022-07, Vol.591, p.153144, Article 153144

2022

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High performance foreign-dopant-free ZnO/Al Ga N ultraviolet phototransistors using atomic-layer-deposited ZnO emitter layer

Journal of alloys and compounds, 2023-03, Vol.937, p.168433, Article 168433

2023

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High-Performance AlGaN Heterojunction Phototransistor With Dopant-Free Polarization-Doped P-Base

IEEE electron device letters, 2020-03, Vol.41 (3), p.325-328

2020

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AlGaN solar-blind phototransistor capable of directly detecting sub-fW signals: self-depletion and photorecovery of full-channel 2DEG enabled by a quasi-pseudomorphic structure

Photonics research (Washington, DC), 2023-07, Vol.11 (7), p.1217

2023

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Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiN x Passivation

IEEE electron device letters, 2024-11, Vol.45 (11), p.2074-2077

2024

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Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation

IEEE electron device letters, 2024-11, Vol.45 (11), p.2074-2077

2024

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Highly Sensitive Narrowband AlGaN Solar Blind Ultraviolet Photodetectors Using Polarization Induced Heterojunction Barrier

IEEE electron device letters, 2024-04, Vol.45 (4), p.550-553

2024

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Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

Photonics research (Washington, DC), 2022-01, Vol.10 (1), p.111

2022

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An ultrahigh performance InGaN/GaN visible-light phototransducer based on polarization induced heterointerface barrier and minority carrier localization

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-04, Vol.11 (16), p.5281-5289

2023

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Controlling metal adatoms on InGaN growing front for defect suppression and high-stability visible-light photodetection

Journal of alloys and compounds, 2023-05, Vol.942, p.168991, Article 168991

2023

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Polarization engineered InGaN/GaN visible-light photodiodes featuring high responsivity, bandpass response, and high speed

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-09, Vol.9 (36), p.12273-1228

2021

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Substantial improvement of InGaN/GaN visible-light polarization-induced self-depletion phototransistor by thermally oxidized Al2O3

High performance InGaN/GaN visible-light field effect phototransistor using polarization induced virtual photogate

Poly(ethyleneglycol)‑b‑Poly(ε-caprolactone-co-γ-hydroxyl-ε- caprolactone) Bearing Pendant Hydroxyl Groups as Nanocarriers for Doxorubicin Delivery

Drying effects on the antioxidant properties of polysaccharides obtained from Agaricus blazei Murrill

High-gain AlGaN/GaN visible-blind avalanche heterojunction phototransistors

Superfluorescence of Sub-Band States in C-Plane In0.1Ga0.9N/GaN Multiple-QWs

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Preventing trench defect formation in InGaN epilayers using Ga-migration-enhanced epitaxy

A Novel p-Type ZnCoxOy Thin Film Grown by Atomic Layer Deposition

Thermosensitive in situ hydrogel based on the hybrid of hyaluronic acid and modified PCL/PEG triblock copolymer

Superhigh gain InGaN/GaN visible-light photodetector using polarization heterointerface barrier and single-carrier superlattices

Surface Evolution of Thick InGaN Epilayers with Growth Interruption Time

InGaN/GaN Visible-Light Heterojunction Phototransistor Featuring High Responsivity, High Speed, and Bias-Controlled Wavelength-Selectivity

High performance foreign-dopant-free ZnO/AlxGa1−xN ultraviolet phototransistors using atomic-layer-deposited ZnO emitter layer

Significant performance improvement of AlGaN solar-blind heterojunction phototransistors by using Na2S solution based surface treatment

High performance foreign-dopant-free ZnO/Al Ga N ultraviolet phototransistors using atomic-layer-deposited ZnO emitter layer

High-Performance AlGaN Heterojunction Phototransistor With Dopant-Free Polarization-Doped P-Base

AlGaN solar-blind phototransistor capable of directly detecting sub-fW signals: self-depletion and photorecovery of full-channel 2DEG enabled by a quasi-pseudomorphic structure

Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiN x Passivation

Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation

Highly Sensitive Narrowband AlGaN Solar Blind Ultraviolet Photodetectors Using Polarization Induced Heterojunction Barrier

Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

An ultrahigh performance InGaN/GaN visible-light phototransducer based on polarization induced heterointerface barrier and minority carrier localization

Controlling metal adatoms on InGaN growing front for defect suppression and high-stability visible-light photodetection

Polarization engineered InGaN/GaN visible-light photodiodes featuring high responsivity, bandpass response, and high speed

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