UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

Volltextzugriff (PDF)

Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD

Vacuum, 2009-08, Vol.84 (1), p.170-173

2009

Volltextzugriff (PDF)

Four weevil species new to the fauna of Hungary from motorway rest areas (Coleoptera: Curculionidae)

Folia entomologica Hungarica, 2014, Vol.75, p.73-78

2014

Volltextzugriff (PDF)

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Microelectronic engineering, 2009-07, Vol.86 (7), p.1646-1649

2009

Volltextzugriff (PDF)

Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

IEEE electron device letters, 2012-11, Vol.33 (11), p.1535-1537

2012

Volltextzugriff (PDF)

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Solid-state electronics, 2011-08, Vol.62 (1), p.185-188

2011

Volltextzugriff (PDF)

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Solid-state electronics, 2012-08, Vol.74, p.97-101

2012

Volltextzugriff (PDF)

20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Solid-state electronics, 2012-05, Vol.71, p.88-92

2012

Volltextzugriff (PDF)

Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

IEEE electron device letters, 2012-06, Vol.33 (6), p.758-760

2012

Volltextzugriff (PDF)

LaScO3 as a higher-κ dielectric for p-MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1323-1325

2011

Volltextzugriff (PDF)

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

Volltextzugriff (PDF)

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Solid-state electronics, 2012-05, Vol.71, p.42-47

2012

Volltextzugriff (PDF)

Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology

Microelectronic engineering, 2006-11, Vol.83 (11), p.2412-2416

2006

Volltextzugriff (PDF)

Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application

Integrated ferroelectrics, 2011-01, Vol.125 (1), p.44-52

2011

Volltextzugriff (PDF)

Thermal stability of GdScO 3 and LaLuO 3 films prepared by liquid injection MOCVD

Vacuum, 2009, Vol.84 (1), p.170-173

2009

Volltextzugriff (PDF)

Application of Ru-based gate materials for CMOS technology

Materials science in semiconductor processing, 2004, Vol.7 (4), p.271-276

2004

Volltextzugriff (PDF)

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Solid-state electronics, 2012-05, Vol.71, p.19-24

2012

Volltextzugriff (PDF)

Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-01, Vol.116 (1), p.30-33

2005

Volltextzugriff (PDF)

LaScO 3 as a higher- κ dielectric for p-MOSFETs

Microelectronic engineering, 2011, Vol.88 (7), p.1323-1325

2011

Volltextzugriff (PDF)

High mobility compressive strained Si 0.5Ge 0.5 quantum well p-MOSFETs with higher- k/metal-gate

Solid-state electronics, 2011, Vol.62 (1), p.185-188

2011

Volltextzugriff (PDF)

Growth of gadolinium oxide films for advanced MOS structure

Microelectronic engineering, 2005-06, Vol.80, p.154-157

2005

Volltextzugriff (PDF)

Properties of Ru∕Hf[sub x]Si[sub 1−x]O[sub y]∕Si Metal Oxide Semiconductor Gate Stack Structures Grown by Atomic Vapor Deposition

Journal of the Electrochemical Society, 2006, Vol.153 (8), p.F176

2006

Volltextzugriff (PDF)

Thermal Stability of GdScO3 Dielectric Films Grown on Si and InAlN/GaN Substrates

MRS proceedings, 2009, Vol.1155 (1)

2009

Volltextzugriff (PDF)

Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.1065-1072

2006

Volltextzugriff (PDF)

Preparation of SrRuO3 films for advanced CMOS metal gates

Materials science in semiconductor processing, 2004, Vol.7 (4-6), p.265-269

2004

Volltextzugriff (PDF)

1 – 25 von 135

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(109)
Mit Volltextzugriff
(124)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(62)
Physics
(40)
Physical Sciences
(33)
Technology
(33)
Engineering
(23)
Engineering, Electrical & Electronic
(23)
Life Sciences & Biomedicine
(22)
Physics, Applied
(16)
Silicon
(16)
Animals
(15)
Transistors
(14)
Male
(13)
Materials Science
(13)
Exact Sciences And Technology
(12)
Applied Sciences
(11)
Cardiac & Cardiovascular Systems
(11)
Cardiovascular System & Cardiology
(11)
Electronics
(11)
Physics, Condensed Matter
(11)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(11)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD

Four weevil species new to the fauna of Hungary from motorway rest areas (Coleoptera: Curculionidae)

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

LaScO3 as a higher-κ dielectric for p-MOSFETs

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology

Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application

Thermal stability of GdScO 3 and LaLuO 3 films prepared by liquid injection MOCVD

Application of Ru-based gate materials for CMOS technology

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates

LaScO 3 as a higher- κ dielectric for p-MOSFETs

High mobility compressive strained Si 0.5Ge 0.5 quantum well p-MOSFETs with higher- k/metal-gate

Growth of gadolinium oxide films for advanced MOS structure

Properties of Ru∕Hf[sub x]Si[sub 1−x]O[sub y]∕Si Metal Oxide Semiconductor Gate Stack Structures Grown by Atomic Vapor Deposition

Thermal Stability of GdScO3 Dielectric Films Grown on Si and InAlN/GaN Substrates

Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

Preparation of SrRuO3 films for advanced CMOS metal gates

Suchergebnisse filtern