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Layered MoS2 grown on c -sapphire by pulsed laser deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2015-03, Vol.9 (3), p.187-191

2015

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The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN‐on‐Si Heterostructure

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers

Journal of applied physics, 2017-09, Vol.122 (10)

2017

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Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

Electronic materials letters, 2015-03, Vol.11 (2), p.217-224

2015

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2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

Electronic Materials Letters, 2015, 11(3), , pp.352-359

2015

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RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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Photoluminescence and Raman studies of GaN films grown by MOCVD

Journal of physics. Conference series, 2009-09, Vol.187 (1), p.012021

2009

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Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

Solar energy materials and solar cells, 2012-07, Vol.102, p.208-211

2012

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Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors

Chemical vapor deposition, 2015-03, Vol.21 (1-2-3), p.33-40

2015

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Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.473-477

2010

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Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates

Jpn J Appl Phys, 2012-02, Vol.51 (2), p.025505-025505-4

2012

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Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers

ECS transactions, 2013, Vol.50 (3), p.461-467

2013

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Post sulfurization effect on the MoS2 grown by pulsed laser deposition

2016 China Semiconductor Technology International Conference (CSTIC), 2016, p.1-3

2016

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Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD

Microelectronics and reliability, 2018-04, Vol.83, p.286-292

2018

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Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111)

2017 China Semiconductor Technology International Conference (CSTIC), 2017, p.1-3

2017

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Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014, p.20-23

2014

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Wafer size MOS2 with few monolayer synthesized by H2S sulfurization

2017 China Semiconductor Technology International Conference (CSTIC), 2017, p.1-3

2017

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Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors super()

Chemical vapor deposition, 2015-03, Vol.21 (1-2-3), p.33-40

2015

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Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement

IEEE transactions on device and materials reliability, 2020-06, Vol.20 (2), p.436-441

2020

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Growth and fabrication of AlGaN/GaN HEMT on SiC substrate

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), 2012, p.729-732

2012

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Layered MoS 2 grown on c ‐sapphire by pulsed laser deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2015-03, Vol.9 (3), p.187-191

2015

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Effect of Graded Al x Ga 1-x N Layers on the Properties of GaN Grown on Patterned Si Substrates

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2R), p.25505

2012

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Effect of Graded Al x Ga 1- x N Layers on the Properties of GaN Grown on Patterned Si Substrates

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2R), p.25505

2012

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Electrical Properties of Compound 2D Semiconductor Mo1−xNbxS2

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018, p.1-4

2018

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BƯỚC ĐẦU ĐÁNH GIÁ HIỆU QUẢ SỬ DỤNG HUYẾT TƯƠNG GIÀU TIỂU CẦU TỰ THÂN Ở CÁC BỆNH NHÂN CÓ TIÊN LƯỢNG KHÓ TRONG THỤ TINH TRONG ỐNG NGHIỆM

Tạp chí Y học Việt Nam, 2022-06, Vol.513 (2)

2022

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Layered MoS2 grown on c -sapphire by pulsed laser deposition

The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN‐on‐Si Heterostructure

Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers

Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Photoluminescence and Raman studies of GaN films grown by MOCVD

Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors

Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates

Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers

Post sulfurization effect on the MoS2 grown by pulsed laser deposition

Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD

Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111)

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Wafer size MOS2 with few monolayer synthesized by H2S sulfurization

Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors super()

Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement

Growth and fabrication of AlGaN/GaN HEMT on SiC substrate

Layered MoS 2 grown on c ‐sapphire by pulsed laser deposition

Effect of Graded Al x Ga 1-x N Layers on the Properties of GaN Grown on Patterned Si Substrates

Effect of Graded Al x Ga 1- x N Layers on the Properties of GaN Grown on Patterned Si Substrates

Electrical Properties of Compound 2D Semiconductor Mo1−xNbxS2

BƯỚC ĐẦU ĐÁNH GIÁ HIỆU QUẢ SỬ DỤNG HUYẾT TƯƠNG GIÀU TIỂU CẦU TỰ THÂN Ở CÁC BỆNH NHÂN CÓ TIÊN LƯỢNG KHÓ TRONG THỤ TINH TRONG ỐNG NGHIỆM

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