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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Journal of crystal growth, 2018-12, Vol.504, p.1-6

2018

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High growth rate MOVPE of Al(Ga)N in planetary reactor

Journal of crystal growth, 2012-08, Vol.352 (1), p.209-213

2012

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Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs

Journal of luminescence, 2021-06, Vol.234, p.117957, Article 117957

2021

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InGaN/GaN heterostructures grown by submonolayer deposition

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1335-1340

2012

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Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1281-1285

2012

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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2010-01, Vol.44 (1), p.93-97

2010

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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2010-07, Vol.44 (7), p.924-930

2010

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Study of silicon nitride deposition in III-N MOVPE reactors

Journal of crystal growth, 2020-12, Vol.551, p.125906, Article 125906

2020

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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2010-01, Vol.44 (1), p.123-126

2010

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Formation of composite InGaN/GaN/InAlN quantum dots

Semiconductors (Woodbury, N.Y.), 2010-10, Vol.44 (10), p.1338-1341

2010

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Effects of proton implantation on electrical and recombination properties of n-GaN

Solid-state electronics, 2000-11, Vol.44 (11), p.1971-1983

2000

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Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

Journal of crystal growth, 2016-09, Vol.449, p.108-113

2016

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Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

Nanotechnology, 2017-01, Vol.28 (1), p.015701-015701

2017

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Fast AlGaN growth in a whole composition range in planetary reactor

Journal of crystal growth, 2013-05, Vol.370, p.7-11

2013

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Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

Solid-state electronics, 2001-02, Vol.45 (2), p.255-259

2001

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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Semiconductors (Woodbury, N.Y.), 2016-02, Vol.50 (2), p.244-248

2016

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Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1-xN Superlattices

physica status solidi (b), 2002-12, Vol.234 (3), p.975-979

2002

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Hydrogen effects in III-nitride MOVPE

Journal of crystal growth, 2008-11, Vol.310 (23), p.4862-4866

2008

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Elastic strains and delocalized optical phonons in AlN/GaN superlattices

Semiconductors (Woodbury, N.Y.), 2016-08, Vol.50 (8), p.1043-1048

2016

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Journal of crystal growth, 2011-01, Vol.315 (1), p.267-271

2011

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InGaN/GaN light-emitting diode microwires of submillimeter length

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.100-103

2017

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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1241-1247

2016

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Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1516-1521

2015

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Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (1), p.53-57

2014

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Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

Journal of crystal growth, 2004-12, Vol.272 (1), p.420-425

2004

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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

High growth rate MOVPE of Al(Ga)N in planetary reactor

Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs

InGaN/GaN heterostructures grown by submonolayer deposition

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

Study of silicon nitride deposition in III-N MOVPE reactors

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

Formation of composite InGaN/GaN/InAlN quantum dots

Effects of proton implantation on electrical and recombination properties of n-GaN

Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

Fast AlGaN growth in a whole composition range in planetary reactor

Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1-xN Superlattices

Hydrogen effects in III-nitride MOVPE

Elastic strains and delocalized optical phonons in AlN/GaN superlattices

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

InGaN/GaN light-emitting diode microwires of submillimeter length

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

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